MIMMK160S160UA 1600V 160A thyristor Module RoHS Compliant Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM TC=25°C unless otherwise specified Value Unit 1600 V IT(AV) TC=85 , 180° conduction, half sine wave; 160 A IT(RMS) as AC switch; 355 A TJ=45 , t=10ms (50Hz), sine, VR=0; 4870 TJ=45 , t=8.3 ms (60Hz), sine, VR=0; 5100 TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 4100 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 4300 119 ITSM TJ=45 , t=10ms (50Hz), sine, VR=0; I2t TJ=45 , t=8.3 ms (60Hz), sine, VR=0; TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 130 84 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 92.5 IDRM/IRRM TJ=125 , VD=VR=1600V; dV/dt A K A2s 50 mA TJ =125 , exponential to 67% rated VDRM 1000 V/us VISOL 50Hz, all terminals shorted, t=1s, IISOL≤1mA ; 3500 V~ TJ Max. junction operating temperature range -40～125 TSTG Max. storage temperature range -40～150 ℃ MIMMK160S160UA ELECTRICAL CHARACTERISTICS Symbol Test Condition TC=25°C unless otherwise specified Min. Typ. Max. Unit 16.7% x π x IAV < I <π x IAV,TJ =130°C; 0.80 V I > π x IAV , TJ =130°C; 0.98 V 16.7% x π x IAV < I <π x IAV,TJ =130°C; 1.67 mΩ I > π x IAV , TJ =130°C; 1.38 mΩ IH VAK= 6V, initial IT=30A; 200 mA IL Anode supply =6V, resistive load=1Ω, 400 mA VTO rt gate pulse =10V, 100us; VTM ITM=502A, td=10 ms, half sine; PGM tp≤5ms, Tj=125°C; 12 W PGM(AV) f=50Hz, Tj=125°C; 3 W 3 A 10 V IGM -VGT 1.54 V tp≤5ms, Tj=125°C; VA=6V, RA=1Ω, Tj=-40°C; VGT IGT VGD IGD di/dt 4 VA=6V, RA=1Ω; 2.5 VA=6V, RA=1Ω, Tj=125°C; 1.7 VA=6V, RA=1Ω, Tj=-40°C; 270 VA=6V, RA=1Ω; 150 VA=6V, RA=1Ω, Tj=125°C; 80 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition mA 0.3 V 10 mA 300 A/us VAK=VDRM, Tj=125 ITM=400A, rated VDRM, Tj=125 V TC=25°C unless otherwise specified value Unit Rthjc DC operation, per junction; 0.18 K/W RTHCS Mounting surface smooth,flat and greased, per junction; 0.1 K/W Md Weight Mounting torque(M6) Terminal connection torque(M6) Typical value 4 to 6 N·m 156 g MIMMK160S160UA Characteristic curves 130 RTHJC(DC)=0.18 K/W 120 110 Conduction angle 100 90 30 60 80 90 120 180 70 0 Maximun allowable case tem (℃) Maximun allowable case tem (℃) 130 60 120 Average forward current(A) RTHJC(DC)=0.18 K/W 120 110 100 Conduction period 30 90 60 80 90 70 60 180 0 350 300 180 120 90 60 30 250 200 150 RMS limit 100 50 0 Conduction angle 0 Maximun average on-state power loss (W) Maximun average on-state power loss (W) Per junction TJ=125℃ 20 40 60 80 100 120 140 160 180 Average on-state current(A) 4000 Initial TJ=125℃ @60Hz 0.0083 s @50Hz 0.01 s 3500 3000 2500 2000 Per junction 1500 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current 300 DC 180 120 90 60 30 350 300 250 200 RMS limit 150 100 Conduction period Per junction TJ=125℃ 50 0 0 30 60 90 120 150 180 210 240 270 Average on-state current(A) Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At any rated load condition and with rated VRRM applied following surge 100 200 Average on-state current (A) 400 Figure 3. on-state power loss characteristics 4500 DC Figure 2. current rating characteristics Figure 1. current rating characteristics 400 120 180 5000 4500 4000 3500 Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial TJ= 125℃ no voltage reapplied rated VRRM reapplied 3000 2500 2000 1500 0.01 Per junction 0.1 Pulse Train Duration (s) 1 Figure 6. Maximum Non-Repetitive Surge Current MIMMK160S160UA 600 Maximum Total On-state Power Loss (W) Maximum Total On-state Power Loss (W) 600 180 120 90 60 30 500 400 300 Conduction angle 200 Per module TJ=125℃ 100 0 0 100 200 400 300 Total RMS Output Current (A) 500 0.06K/W 400 0.08K/W 0.1K/W 300 0.16K/W 0.2K/W 200 100 0 Figure 7. On-State Power Loss Characteristics-1 0 25 Figure.8 10000 1000 Transient Thermal Impedance ZthJC 1 TJ=25℃ TJ=125℃ 100 10 Per junction 0 0 4 1 2 3 Instantaneous On-state Voltage (V) 50 75 100 On-State Power Loss Characteristics-2 0.1 1 0.1 Square Wave Pulse Duration (s) (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line 10 for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃ 1 (4) VGD (3) (2) (1) Frequency Limited by PG(AV) IGD 0.01 0.1 10 Figure.10 Thermal Impedance ZthJC Characteristics 100 Rectangular gate pulse 0.1 0.001 125 Steady State Value (DC Operation) 0.01 0.01 5 Figure.9 On State Voltage Drop Characteristics Instantaneous Gate Voltage (V) Instantaneous On-state Current (A) RTHSA=0.02K/W-Delta R 0.04K/W 1 Instantaneous Gate Current (A) Figure.11 Gate Characteristics 10 100 1000 MIMMK160S160UA Package Outline (Dimensions in mm)