MIMMK100T160UX 1600V 100A thyristor Module RoHS Compliant 12012Features · Isolated Module Package · Isolation voltage 3000 V · Three Phase Bridge and a Thyristor Applications · Current Stabilized Power Supply · Switching Power Supply · Inverter For AC or DC Motor Control ■ Diode ABSOLUTE MAXIMUM RATINGS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Max. Unit 1600 V VRRM Repetitive Reverse Voltage ID(AV) Average Forward Current TC=90°C, moudle 100 A Non-Repetitive Surge TJ=45°C, t=10ms, 50Hz, Sine 1250 A Forward Current TJ=45°C,t=8.3ms, 60Hz, Sine 1350 A TJ=45°C, t=10ms, 50Hz, Sine 7812 A2s TJ=45°C,t=8.3ms, 60Hz, Sine 9112 A2s IFSM I2 t I2t (For Fusing) TJ Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V 332 g AC, 50Hz, t=1min Weight ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter IRM Reverse Leakage Current VF Forward Voltage RθJC RθCS Test Conditions TC=25°C unless otherwise specified Min. Typ. Max. Unit VR=1600V -- -- 500 µA VR=1600V, TJ=125°C -- -- 5 mA IF=100A -- 1.15 -- V -- 1.1 -- V IF=100A, TJ=125°C Thermal Resistance per diode -- -- 0.84 °C /W Junction-to-Case per module -- -- 0.14 °C /W Thermal Resistance per diode -- -- 0.39 °C /W Case -to-Sink per module -- -- 0.065 °C /W MIMMK100T160UX ■ Thyristor ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM TC=25°C unless otherwise specified Value Unit 1600 V A IT(AV) TC=90 , 180° conduction, half sine wave; 100 ITSM TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 1550 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 1650 TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 12012 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 13612 A2s dV/dt TJ =125 , exponential to 67% rated VDRM 1000 V/us dI/dt TJ =125 , ITM=314A rated VDRM 150 A/us VISOL 50Hz, all terminals shorted, t=1s, IISOL≤1mA ; 3000 V~ TJ Max. junction operating temperature range -40～125 TSTG Max. storage temperature range I2 t -40～125 ℃ Mounting torque(M6) 3 to 5 N·m Terminal connection torque(M6) 3 to 5 N·m Terminal connection torque(M4) 1 to 2 N·m ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Test Condition IDRM/IRRM VTM TJ=125 , VD=VR=1600V; ITM=314A, td=10 ms, half sine; VA=6V, RA=1Ω, Tj=-40°C; VGT A TC=25°C unless otherwise specified Min. Typ. Max. Unit 20 mA V 1.54 4 V VA=6V, RA=1Ω; 2.5 VA=6V, RA=1Ω, Tj=125°C; 1.7 VA=6V, RA=1Ω, Tj=-40°C; 200 VA=6V, RA=1Ω; 100 VA=6V, RA=1Ω, Tj=125°C; 80 PGM tp≤5ms, Tj=125°C; 12 W PGM(AV) f=50Hz, Tj=125°C; 3 W Rthjc Thermal Resistance , Junction-to-Case 0.24 K/W RTHCS Thermal Resistance, Case -to-Sink 0.06 K/W IGT mA MIMMK100T160UX Characteristic curves 1 160 -1 10 TJ =125°C 120 ZthJC (K/W) Forward Current IF (A) 200 80 0 10-3 TJ =25°C 40 0 0.3 0.6 1.5 1.2 0.9 Duty Duty 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 Single Single Pulse Pulse 10-2 10-4 -4 10 1.8 Forward Voltage Drop VF（V） 150 125 125 Output Current (A) 100 75 50 25 1 RTHSA=0.02K/W-Delta R 0.04K/W 0.06K/W 100 0.08K/W 0.1K/W 75 0.16K/W 0.2K/W 50 25 0 0 25 70 50 100 125 0 150 0 25 Output Current (A) 50 75 100 125 150 Case Temperature (°C) Figure 3. SCR Output Current vs Power Dissipation Figure 4. SCR Output Current vs Case Temperature 1 TJ =125°C 100 Transient Thermal Impedance ZthJC 1000 Instantaneous On-state Current (A) 10-1 Figure 2. Diode Thermal Impedance ZthJC 150 TJ=25℃ TJ=125℃ 10 TJ =25°C Per junction 1 10-2 Rectangular Pulse Duration (seconds) Figure1. Diode Forward Voltage Drop vs Forward Current Power Dissipation (W) 10-3 0 0.5 1 1.5 2 2.5 3 3.5 0.1 Steady State Value (DC Operation) 0.01 0.001 0.001 0.01 0.1 1 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Figure 5. SCR On State Voltage Drop Figure 6. SCR Thermal Impedance ZthJC 10 MIMMK100T160UX Instantaneous Gate Voltage (V) 100 Rectangular gate pulse (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line for 10 ≤30% rated di/dt:15V, 40Ω (a) tr =1s, tp ≥6 s (b) TJ=-40℃ TJ=25℃ TJ=125℃ 1 (4) VGD 0.1 0.001 (2) (1) Frequency Limited by PG(AV) IGD 0.01 (3) 0.1 1 Instantaneous Gate Current (A) Figure 7. Gate Characteristics Package Outline (Dimensions in mm) 10 100 1000