HMC969


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing
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Electrical test & trimming
o Waffle Pack
o Gel Pak
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Onsite storage, stockholding &
scheduling
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100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A
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On-site failure analysis
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Bespoke 24 Hour monitored
storage systems for secure long
term product support
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On-site failure analysis
Contact
[email protected]
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HMC969
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HMC969
v00.1210
Amplifiers - Linear & Power - Chip
3
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Typical Applications
Features
The HMC969 is ideal for:
Saturated Output Power: +31 dBm @ 15% PAE
• Point-to-Point Radios
Output IP3: +38 dBm
• Point-to-Multi-Point Radios
High Gain: 22 dB
• VSAT & SATCOM
DC Supply: +6V @ 900 mA
• Military & Space
No External Matching Required
Die Size: 2.77 x 2.32 x 0.1 mm
Functional Diagram
General Description
The HMC969 is a 4 stage GaAs pHEMT MMIC 1 Watt
Power Amplifier which operates between 40 and 43.5
GHz. The HMC969 provides 22 dB of gain, +31 dBm
of saturated output power, and 15% PAE from a +6V
supply. With a very good IP3 of 38 dBm, the HMC969
is ideal for linear applications including military and
space as well as point-to-point and point-to-multi-point
radios. All data is taken with the chip in a 50 Ohm test
fixture connected via (2) 0.025 mm (1 mil) diameter
wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
40 - 43.5
Units
GHz
22
dB
0.03
dB/ °C
Input Return Loss
14
dB
Output Return Loss
27
dB
Output Power for 1 dB Compression (P1dB)
28
dBm
Gain Variation Over Temperature
19
Max.
Saturated Output Power (Psat)
31
dBm
Output Third Order Intercept (IP3)[2]
38
dBm
Total Supply Current (Idd)
900
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical.
[2] Measurement taken at +6V @ 900 mA, Pout / Tone = +18 dBm
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
30
30
26
S21
S11
S22
0
-10
18
-20
+25C
+85C
-55C
14
-30
-40
10
38
39
40
41
42
43
FREQUENCY (GHz)
44
45
46
39
40
41
43
44
45
Output Return Loss vs. Temperature
0
0
-5
RETURN LOSS (dB)
+25C
+85C
-55C
-5
-10
-15
-20
-25
+25C
+85C
-55C
-10
-15
-20
-25
-30
-35
-40
-30
39
40
41
42
43
44
39
45
40
41
42
43
44
45
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs. Supply Voltage
36
36
34
34
+25C
+85C
-55C
32
P1dB (dBm)
P1dB (dBm)
42
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
3
22
Amplifiers - Linear & Power - Chip
10
GAIN (dB)
RESPONSE (dB)
20
30
30
28
28
26
26
24
5.0V
5.5V
6.0V
32
24
40
41
42
FREQUENCY (GHz)
43
44
40
41
42
43
44
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-2
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Psat vs. Temperature
Psat vs. Supply Voltage
36
36
+25C
+85C
-55C
Psat (dBm)
32
30
32
30
28
28
26
26
24
40
41
42
43
44
40
41
FREQUENCY (GHz)
43
44
43
44
Psat vs. Supply Current (Idd)
36
36
34
32
800mA
900mA
1000mA
34
800mA
900mA
1000mA
Psat (dBm)
P1dB (dBm)
42
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
30
32
30
28
28
26
26
24
24
40
41
42
43
44
40
41
FREQUENCY (GHz)
42
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +18 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +18 dBm
45
40
40
IP3 (dBm)
45
35
+25C
+85C
-55C
30
35
800mA
900mA
1000mA
30
25
25
40
41
42
FREQUENCY (GHz)
3-3
5.0V
5.5V
6.0V
34
24
IP3 (dBm)
Amplifiers - Linear & Power - Chip
3
Psat (dBm)
34
43
44
40
41
42
43
44
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +18 dBm
Output IM3 @ Vdd = +5V
45
60
50
IM3 (dBc)
IP3 (dBm)
40
35
40 GHz
41 GHz
42 GHz
43 GHz
44 GHz
20
5.0V
5.5V
6.0V
30
30
10
25
0
40
41
42
43
44
10
12
14
16
FREQUENCY (GHz)
60
50
50
40
40
30
24
20
22
24
40 GHz
41 GHz
42 GHz
43 GHz
44 GHz
10
0
0
10
12
14
16
18
20
22
24
10
12
14
16
Pout/TONE (dBm)
18
Pout/TONE (dBm)
Power Compression @ 41 GHz
Power Compression @ 42 GHz
40
40
35
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
22
30
20
40 GHz
41 GHz
42 GHz
43 GHz
44 GHz
10
20
Output IM3 @ Vdd = +6V
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +5.5V
20
18
Pout/TONE (dBm)
Pout
Gain
PAE
30
25
20
15
10
5
0
35
Amplifiers - Linear & Power - Chip
3
40
Pout
Gain
PAE
30
25
20
15
10
5
0
0
3
6
9
INPUT POWER (dBm)
12
15
0
3
6
9
12
15
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-4
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Gain & Power vs.
Supply Current @ 41 GHz
Reverse isolation vs. Temperature
40
+25C
+85C
-55C
-20
-30
-40
-50
Gain
P1dB
Psat
35
30
25
20
15
-60
36
37
38
39
40
800
41
900
Gain & Power vs.
Supply Voltage @ 41 GHz
1000
Idd (mA)
FREQUENCY (GHz)
Power Dissipation
10
40
9
Gain
P1dB
Psat
35
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - Chip
3
ISOLATION (dB)
-10
Gain (dB), P1dB (dBm), Psat (dBm)
0
30
25
20
40GHz
41GHz
42GHz
43GHz
8
7
6
5
4
3
2
1
0
15
5
5.5
6
0
1
2
3
Vdd (V)
4
5
6
7
8
9
10
11 12
13
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7V
RF Input Power (RFIN)
Channel Temperature
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+20 dBm
+5.0
900
150 °C
+5.5
900
+6.0
900
Continuous Pdiss (T= 85 °C)
(derate 15.5 mW/°C above 85 °C)
6.45 W
Thermal Resistance
(channel to die bottom)
10.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 900 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Linear & Power - Chip
3
3-6
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Pad Descriptions
Amplifiers - Linear & Power - Chip
3
3-7
Pad Number
Function
Description
1
RFIN
This pad is AC coupled and matched to 50 Ohms.
2, 6
Vgg
Gate control for amplifier. External bypass
capacitors of 100 pF, 0.01 µF, and 4.7 µF are
required on the pad that is used.
3, 5
Vdd1, Vdd2
Drain bias voltage for amplifier. External bypass capacitors
of 100 pF, 0.01 µF and 4.7 µF are required on each pad.
4
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Application Circuit 2
Amplifiers - Linear & Power - Chip
3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-8
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Assembly Diagram
Amplifiers - Linear & Power - Chip
3
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
3
Amplifiers - Linear & Power - Chip
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3 - 10