Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC950 v03.0611 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Typical Applications Features The HMC950 is ideal for: Saturated Output Power: +37 dBm @ 23% PAE • Point-to-Point Radios High Output IP3: +44.5 dBm • Point-to-Multi-Point Radios High Gain: 28 dB • VSAT & SATCOM DC Supply: +7V @ 2400 mA • Military & Space No External Matching Required Die Size: 3.23 x 3.45 x 0.1 mm Functional Diagram General Description The HMC950 is a four stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% PAE from a +7V power supply. The HMC950 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 12 - 13 26 Units GHz 28 dB 0.056 dB/ °C Input Return Loss 17 16 dB Output Return Loss 17 17 dB Output Power for 1 dB Compression (P1dB) 36.5 dBm Saturated Output Power (Psat) 37 37 dBm Output Third Order Intercept (IP3)[2] 43 44.5 dBm 2400 2400 mA Total Supply Current (Idd) 34.5 36.5 26 Max. 0.056 Gain Variation Over Temperature 28 Typ. 13 - 16 34.5 [1] Adjust Vgg between -2 to 0V to achieve Idd = 2400 mA typical. [2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +24 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 36 32 S21 S11 S22 10 0 28 24 +25C +85C -55C -10 20 -20 16 -30 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 11 18 12 13 15 16 17 Output Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -4 RETURN LOSS (dB) -4 -8 -12 -16 -8 -12 -16 -20 -20 -24 11 12 13 14 15 16 17 11 12 13 FREQUENCY (GHz) 14 15 16 17 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs. Supply Voltage 40 40 +25C +85C -55C 5V 6V 7V 38 P1dB (dBm) 38 P1dB (dBm) 14 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 3 20 GAIN (dB) RESPONSE (dB) 30 36 34 32 Amplifiers - Linear & Power - Chip 40 36 34 32 30 30 12 13 14 FREQUENCY (GHz) 15 16 12 13 14 15 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Psat vs. Supply Voltage 40 38 38 Psat (dBm) 40 36 +25C +85C -55C 34 32 34 5V 6V 7V 30 12 13 14 15 16 12 13 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 15 16 Psat vs. Supply Current (Idd) 40 40 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA 38 Psat (dBm) 38 P1dB (dBm) 14 FREQUENCY (GHz) 36 34 32 36 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA 34 32 30 30 12 13 14 15 16 12 13 FREQUENCY (GHz) 14 15 16 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +24 dBm Output IP3 vs. Supply Current, Pout/Tone = +24 dBm 50 45 45 IP3 (dBm) 50 40 +25C +85C -55C 35 40 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA 35 30 30 12 13 14 FREQUENCY (GHz) 3-3 36 32 30 IP3 (dBm) Amplifiers - Linear & Power - Chip 3 Psat (dBm) Psat vs. Temperature 15 16 12 13 14 15 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +24 dBm Output IM3 @ Vdd = +5V 50 80 70 40 5V 6V 7V 35 50 40 30 20 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 10 0 30 12 13 14 15 16 10 12 14 16 80 70 70 60 60 50 50 40 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 20 22 24 26 28 24 26 28 40 30 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 20 10 10 0 0 10 12 14 16 18 20 22 24 26 28 10 12 14 Pout/TONE (dBm) 18 20 22 Reverse Isolation vs. Temperature 40 0 Pout Gain PAE 35 -10 +25C +85C -55C -20 ISOLATION (dB) 30 25 20 15 -30 -40 -50 10 -60 5 -70 0 -12 16 Pout/TONE (dBm) Power Compression @ 14 GHz Pout (dBm), GAIN (dB), PAE (%) 20 Output IM3 @ Vdd = +7V 80 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +6V 30 18 Pout/TONE (dBm) FREQUENCY (GHz) Amplifiers - Linear & Power - Chip 3 60 IM3 (dBc) IP3 (dBm) 45 -80 -9 -6 -3 0 3 6 INPUT POWER (dBm) 9 12 15 16 18 20 22 24 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Gain & Power vs. Supply Current @ 14 GHz Gain & Power vs. Supply Voltage @ 14 GHz Gain (dB), P1dB (dBm), Psat (dBm) 40 35 30 25 Gain P1dB Psat 20 1600 35 30 25 Gain P1dB Psat 20 1800 2000 2200 2400 5 5.5 Idd (mA) 6 6.5 7 Vdd (V) Power Dissipation 20 POWER DISSIPATION (W) Amplifiers - Linear & Power - Chip 3 Gain (dB), P1dB (dBm), Psat (dBm) 40 18 16 14 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 12 10 -12 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8V Vdd (V) Idd (mA) RF Input Power (RFIN) +27 dBm +5.0 2400 Channel Temperature 150 °C +6.0 2400 Continuous Pdiss (T= 85 °C) (derate 306 mW/°C above 85 °C) 19.9 W +7.0 2400 Thermal Resistance (channel to die bottom) 3.27 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above, Vgg adjusted to achieve Idd = 2400 mA at +7V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Outline Drawing Amplifiers - Linear & Power - Chip 3 Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-6 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Pad Descriptions Amplifiers - Linear & Power - Chip 3 3-7 Pad Number Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms over the operating frequency range. 2, 12 Vgg1 Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF and 4.7 µF are required. The pads are connected on chip. Vgg may be applied to either pad 2 or pad 12 3-6 Vdd1, Vdd2, Vdd3, Vdd4 Interface Schematic Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pad, followed by common 0.1 µF capacitors. 8 - 11 Vdd8, Vdd7, Vdd6, Vdd5 7 RFOUT This pad is DC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Assembly Diagram Amplifiers - Linear & Power - Chip 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-8 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Amplifiers - Linear & Power - Chip 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Notes: Amplifiers - Linear & Power - Chip 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 - 10