HMC1053

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HMC1053
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HMC1053
v01.0813
Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Typical Applications
Features
The HMC1053 is ideal for:
+38 dBm Pout @ 26% PAE
• Point-to-Point Radios
High Output IP3: +43 dBm
• Point-to-Multi-Point Radios
High Gain: 34 dB
• VSAT & SATCOM
DC Supply: +7V @ 2400 mA
No External Matching Required
Die Size: 3.47 x 3.46 x 0.1 mm
Functional Diagram
General Description
The HMC1053 is a four-stage GaAs pHEMT MMIC 5
Watt Power Amplifier with an integrated temperature
compensated on-chip Power Detector which operates
between 9 and 14 GHz. The HMC1053 provides 34 dB
of gain, +43 dBm output IP3 and +38 dBm of saturated
output power at 26% PAE from a +7V power supply.
The HMC1053 exhibits excellent linearity and is
optimized for high capacity point-to-point and point-tomulti-point radio systems. The amplifier configuration
and high gain make it an excellent candidate for last
stage signal amplification preceding the antenna. All
data is taken with the chip in a 50 Ohm test fixture
connected via (2) 0.025 mm (1 mil) diameter wire
bonds of 0.31 mm (12 mil) length.
Electrical Specifications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
9 - 10
31
Units
GHz
34
dB
0.040
dB/ °C
Input Return Loss
30
26
dB
Output Return Loss
19
17
dB
36.5
dBm
Output Power for 1 dB Compression (P1dB)
32.5
35.5
31
Max.
0.047
Gain Variation Over Temperature
34
Typ.
10 - 14
33.5
Saturated Output Power (Psat)
38
38.5
dBm
Output Third Order Intercept (IP3)[2]
41
43
dBm
2400
2400
mA
Total Supply Current (Idd)
[1] Adjust Vgg1, Vgg2 between -2 to 0V to achieve Idd = 2400 mA typical.
[2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +26 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
40
30
+25 C
+85 C
-55 C
41
10
37
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
20
-10
33
29
-20
25
-30
-40
21
8
9
10
11
12
13
FREQUENCY (GHz)
14
15
16
9
12
13
14
Output Return Loss vs. Temperature
0
0
-5
+25 C
+85 C
-55 C
RETURN LOSS (dB)
-10
+25 C
+85 C
-55 C
-5
-15
-20
-25
-10
-15
-20
-30
-35
-25
9
10
11
12
13
9
14
10
FREQUENCY (GHz)
11
12
13
14
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs. Supply Voltage
40
40
+25 C
+85 C
-55 C
5V
6V
7V
38
P1dB (dBm)
38
P1dB (dBm)
11
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
10
Amplifiers - Linear & Power - Chip
45
36
34
32
36
34
32
30
30
9
10
11
12
FREQUENCY (GHz)
13
14
9
10
11
12
13
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
40
38
38
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
40
36
+25 C
+85 C
-55 C
34
32
34
5V
6V
7V
30
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
12
13
14
Psat vs. Supply Current (Idd)
42
42
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
40
40
38
Psat (dBm)
38
36
34
36
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
34
32
32
30
30
28
28
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
11
12
13
14
FREQUENCY (GHz)
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
50
50
+25 C
+85 C
-55 C
46
IP3 (dBm)
45
IP3 (dBm)
11
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
40
35
42
38
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
34
30
30
9
10
11
12
FREQUENCY (GHz)
3
36
32
30
P1dB (dBm)
Amplifiers - Linear & Power - Chip
Psat vs. Temperature
13
14
9
10
11
12
13
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +5V
50
70
60
IM3 (dBc)
IP3 (dBm)
45
40
5V
6V
7V
35
50
40
30
20
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
10
30
0
9
10
11
12
13
14
10
12
14
16
FREQUENCY (GHz)
80
70
70
60
60
50
50
40
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
20
22
24
26
28
24
26
28
40
30
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
20
10
10
0
0
10
12
14
16
18
20
22
24
26
28
10
12
14
Pout/TONE (dBm)
18
0
35
-10
ISOLATION (dB)
25
Pout
Gain
PAE
15
22
+25C
+85C
-55C
-20
30
20
20
Reverse Isolation vs. Temperature
40
10
-30
-40
-50
-60
-70
5
0
-20
16
Pout/TONE (dBm)
Power Compression @ 11.5 GHz
Pout (dBm), GAIN (dB), PAE (%)
20
Output IM3 @ Vdd = +7V
80
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +6V
30
18
Pout/TONE (dBm)
Amplifiers - Linear & Power - Chip
80
-80
-90
-17
-14
-11
-8
-5
-2
1
INPUT POWER (dBm)
4
7
10
9
10
11
12
13
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Gain & Power vs.
Supply Current @ 11.5 GHz
Gain & Power vs.
Supply Voltage @ 11.5 GHz
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
45
40
35
30
GAIN
P1dB
Psat
25
1600
GAIN
P1dB
Psat
40
35
30
25
1800
2000
2200
2400
5
5.5
6
Idd (mA)
7
Detector Voltage vs. Frequency &
Temperature
10
20
18
Vref-Vdet (V)
1
16
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
14
-10
-8
-6
-4
0.1
10 GHz +25C
10 GHz +85C
10 GHz -40C
12 GHz +25C
12 GHz +85C
12 GHz -40C
0.01
12
10
-12
6.5
Vdd (V)
Power Dissipation
POWER DISSIPATION (W)
Amplifiers - Linear & Power - Chip
45
-2
0
2
4
6
8
0.001
-10
-6
-2
6
10
14
18
22
26
30
34
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Absolute Maximum Ratings
2
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8V
Vdd (V)
Idd (mA)
RF Input Power (RFIN)
+27 dBm
+5.0
2400
Channel Temperature
150 °C
+6.0
2400
Continuous Pdiss (T= 85 °C)
(derate 306 mW/°C above 85 °C)
19.9 W
+7.0
2400
Thermal Resistance
(channel to die bottom)
3.27 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above, Vgg1, Vgg2 adjusted to achieve Idd = 2400 mA at
+7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Pad Descriptions
7
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms
over the operating frequency range.
2
Vgg1
Gate control for amplifier, Vdd1 - Vdd4. External bypass
capacitors of 100 pF, 0.01 µF and 4.7 µF are required.
3-6
Vdd1, Vdd2,
Vdd3, Vdd4
Interface Schematic
Drain bias voltage for the amplifier. External
bypass capacitors of 100 pF are required for
each pad, followed by common 0.1 µF capacitors.
10 - 13
Vdd5, Vdd6,
Vdd7, Vdd8
7
Vref
DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet.
8
Vdet
DC voltage representing RF output power rectified by diode
which is biased through an external resistor.
9
RFOUT
This pad is DC coupled
and matched to 50 Ohms.
14
Vgg2
Gate control for amplifier, Vdd5 - Vdd8. External bypass
capacitors of 100 pF, 0.01 µF and 4.7 µF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Linear & Power - Chip
Application Circuit
8
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1053
v01.0813
GaAs pHEMT MMIC 5 WATT POWER AMPLIFIER
With Power Detector, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10