HMC392


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC392
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HMC392
v02.0907
LOW NOISE AMPLIFIERS - CHIP
1
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Typical Applications
Features
The HMC392 is ideal for:
Gain: 15.5 dB
• Point-to-Point Radios
Noise Figure: 2.4 dB
• VSAT
Single Supply Voltage: +5V
50 Ohm Matched Input/Output
• LO Driver for HMC Mixers
3
• Military EW, ECM, C I
No External Components Required
• Space
Small Size: 1.3 x 1.0 x 0.1 mm
Functional Diagram
General Description
The HMC392 is a GaAs MMIC Low Noise Amplifier
die which operates between 3.5 and 7.0 GHz. The
amplifier provides 15.5 dB of gain, 2.4 dB noise figure,
and 28 dBm IP3 from a +5V supply voltage. The
HMC392 has six bonding adjustment options which
allow the user to select the bias point and output
power of the device (+15 to +18 dBm). The HMC392
amplifier can easily be integrated into Multi-ChipModules (MCMs) due to its small (1.3 mm2) size. All
data is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd = 5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
4.0 - 6.0
13
Typ.
Max.
3.5 - 7.0
GHz
15.5
19
14
19
dB
0.018
0.025
0.018
0.025
dB/ °C
Noise Figure
2.4
3.0
2.8
3.4
dB
Input Return Loss
15
10
Output Return Loss
15
10
dB
16
dBm
18
dBm
Gain Variation Over Temperature
Output Power for 1 dB Compression (P1dB)
13
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
16
11.5
12
18
25
28
50
23
66
dB
28
50
dBm
66
Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted.
1 - 20
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC392
v02.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
1
Gain vs. Temperature
20
20
15
17
5
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
10
-5
14
+25C
+85C
-55C
11
-10
-15
8
-20
-25
5
2
3
4
5
6
7
8
9
3
4
5
FREQUENCY (GHz)
Input Return Loss vs. Temperature
8
0
+25C
+85C
-55C
+25C
+85C
-55C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
7
Output Return Loss vs. Temperature
0
-10
-15
-10
-15
-20
-20
-25
-25
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
3
8
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
0
5
4.5
+25C
+85C
-55C
4
-10
3.5
ISOLATION (dB)
NOISE FIGURE (dB)
6
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - CHIP
Broadband Gain & Return Loss
3
2.5
2
1.5
1
+25C
+85C
-55C
-20
-30
-40
-50
0.5
0
-60
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
6.5
7
7.5
8
3
3.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 21
HMC392
v02.0907
P1dB vs. Temperature
Psat vs. Temperature
22
22
+25C
+85C
-55C
20
18
Psat (dBm)
P1dB (dBm)
20
16
18
16
14
14
12
12
10
+25C
+85C
-55C
10
3
4
5
6
7
8
3
4
5
FREQUENCY (GHz)
28
+25C
+85C
-55C
24
22
20
4
5
6
7
8
GAIN (dB), NOISE FIGURE (dB), P1dB (dBm)
30
3
16
GAIN
NOISE FIGURE
P1dB
12
8
4
0
4.5
4.75
5
5.5
Gain & Noise Figure vs.
Power Select State
22
18
16
GAIN, NOISE FIGURE (dB)
20
P1dB (dBm)
5.25
Vs (V)
P1dB vs. Power Select State
18
16
14
State 1 Idd=75mA
State 2 Idd=62mA
State 3 Idd=55mA
State 4 Idd=65mA
State 5 Idd=50mA
State 6 Idd=46mA
12
14
12
10
Gain State 1
Gain State 2
Gain State 3
Gain State 4
Gain State 5
Gain State 6
8
6
NF State 1
NF State 2
NF State 3
NF State 4
NF State 5
NF State 6
4
2
0
4
4.5
5
5.5
FREQUENCY (GHz)
1 - 22
8
20
FREQUENCY (GHz)
10
3.5
7
Gain, Noise Figure & Power vs.
Supply Voltage @ 5.5 GHz
32
26
6
FREQUENCY (GHz)
Output IP3 vs. Temperature
IP3 (dBm)
LOW NOISE AMPLIFIERS - CHIP
1
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
6
6.5
3
3.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7.5
8
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
7 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc)
+11 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 7.1 mW/°C above 85 °C)
0.64 W
Thermal Resistance
(channel to die bottom)
140 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85° C
Vdd (Vdc)
Idd (mA)
+4.5
49
+5.0
50
+5.5
51
(State 5 Depicted)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
WP-16 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1
LOW NOISE AMPLIFIERS - CHIP
v02.0907
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 23
HMC392
v02.0907
LOW NOISE AMPLIFIERS - CHIP
1
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Pad Descriptions
Pad Number
Function
2
RFIN
Description
Interface Schematic
This pad is AC coupled and matched to 50 Ohms
Power Select
3
4
PS3
PS4
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
Power Select
7
8
9
PS7
PS8
PS9
1, 5
Vdd,
Vdd (alt.)
6
RFOUT
Die
Bottom
GND
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
Power supply voltage. Connect either pad1 or pad5 to +5V
supply. No choke inductor or bypass capacitor is needed.
This pad is AC coupled and matched to 50 Ohms
Die bottom must be connected to RF/DC ground.
Power Select Table
1 - 24
State
Pads Bonded to Ground
Typical Idd (mA)
Typical P1dB (dBm)
1
PS3 & PS7
75
18.4
2
PS3 & PS8
62
17.9
3
PS3 & PS9
55
16.4
4
PS4 & PS7
65
17.7
5
PS4 & PS8
50
16.9
6
PS4 & PS9
46
15.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC392
v02.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Note: State 5 shown. PS4 and PS8 bonded to ground.
LOW NOISE AMPLIFIERS - CHIP
1
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of
265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 25