HMC128


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
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
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
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supply formats:
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storage systems for secure long
term product support
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Contact
[email protected]
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HMC128
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HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Typical Applications
Features
The HMC128 is ideal for:
Conversion Loss: 7 dB
• Microwave & VSAT Radios
LO to RF and IF Isolation: >36 dB
• Test Equipment
Input IP3: +18 dBm
• Military EW, ECM, C3I
No DC Bias Required
• Space Telecom
Die Size: 1.45 x 1.45 x 0.1 mm
Functional Diagram
General Description
MIXERS - DOUBLE-BALANCED - CHIP
4
The HMC128 is a miniature double-balanced mixer
chip that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer
with high dynamic range. Noise figure is essentially
equal to the conversion loss. The mixer can handle
larger signal levels than active mixers due to the high
third order intercept. MMIC implementation provides
exceptional balance in the circuit resulting in high LO/
RF and LO/IF isolations. This mixer can operate over
a wide LO Drive input of +9 to +15 dBm.
Electrical Specifi cations, TA = +25° C, LO Drive = +15 dBm*
Parameter
Min.
Frequency Range, RF & LO
Typ.
Max.
1.8 - 5.0
Frequency Range, IF
GHz
DC - 3
GHz
Conversion Loss
7
10
dB
Noise Figure (SSB)
7
10
dB
LO to RF Isolation
35
42
dB
LO to IF Isolation
27
36
dB
IP3 (Input)
15
18
dBm
IP2 (Input)
45
50
dBm
1 dB Gain Compression (Input)
5
10
dBm
* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz
4-2
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Conversion Gain vs . Temperature
@ LO = +15 dBm
Isolation @ LO = +15 dBm
0
0
-10
+25 C
+85 C
-55 C
-15
RF/IF
LO/RF
LO/IF
-20
-30
4
-40
-50
-60
-20
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
5.5
6
5
5.5
6
5
5.5
6
0
RETURN LOSS (dB)
CONVERSION GAIN (dB)
5
LO and RF Return Loss
0
-5
-10
+9 dBm
+11 dBm
+13 dBm
+15 dBm
-15
-5
-10
RF
LO
-15
-20
-20
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
4
4.5
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain vs. LO Drive
IF Bandwidth @ LO = +15 dBm
0
CONVERSION GAIN (dB)
0
RESPONSE (dB)
3
3.5
4
4.5
Frequency (GHz)
-5
-10
-15
-5
-10
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
-15
IF CONVERSION LOSS
IF RETURN LOSS
-20
MIXERS - DOUBLE-BALANCED - CHIP
ISOLATION (dB)
CONVERSION GAIN (dB)
-10
-5
-20
0
1
2
3
FREQUENCY (GHz)
4
5
1
1.5
2
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4-3
HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Input IP3 vs.
Temperature @ LO = +15 dBm
Input IP3 vs. LO Drive
30
30
+11 dBm
+13 dBm
+15 dBm
20
15
10
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
FREQUENCY (GHz)
3.5
4
4.5
5
5.5
6
5
5.5
6
Input IP2 vs.
Temperature @ LO = +15 dBm
Input IP2 vs LO Drive
80
80
75
75
70
65
+25 C
+85 C
-55 C
70
+ 11 dBm
+ 13 dBm
+ 15 dBm
IP2 (dBm)
IP2 (dBm)
3
FREQUENCY (GHz)
60
55
65
60
55
50
50
45
45
40
40
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
FREQUENCY (GHz)
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
Input P1dB vs.
Temperature @ LO = +15 dBm
Harmonics of LO
15
nLO Spur @ RF Port
14
+ 25 C
+ 85 C
- 55 C
13
12
11
10
9
8
LO Freq. (GHz)
1
2
3
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
4.5
5
5.5
4
1.5
54
42
54
54
2.0
48
41
50
66
2.5
47
41
44
76
3.5
40
50
52
75
4.5
40
60
51
65
5.5
38
60
46
63
LO = +13 dBm
All values in dBc below input LO level measured at RF port.
7
4-4
20
15
10
P1dB (dBm)
MIXERS - DOUBLE-BALANCED - CHIP
4
+ 25 C
+ 85 C
- 55 C
25
IP3 (dBm)
IP3 (dBm)
25
6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Absolute Maximum Ratings
MxN Spurious @ IF Port
nLO
mRF
0
1
2
3
4
0
xx
5.6
30.3
11.1
34.5
1
2.8
0
23.3
31.5
29.1
2
62.3
58.6
57.8
60.3
75.8
3
74.3
>85
74.3
65.8
74.3
4
>85
>85
>85
>85
>85
LO Drive
+27 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
4
MIXERS - DOUBLE-BALANCED - CHIP
RF Freq.= 3.5 GHz @ -10 dBm
LO Freq.= 3.4 GHz @ +13 dBm
All values in dBc below IF power level.
Measured as downconverter
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
Standard
Alternate
WP-3 (Waffle Pack)
[2]
2. BOND PADS ARE .004” SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”
.1 EXCEPT AS SHOWN
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
4. DIE THICKNESS = .004” [.100 MM]
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4-5
HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Pad Descriptions
Pad Number
Function
Description
1
LO
This pin is DC coupled and matched to 50 Ohms.
2
IF
This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using
a series capacitor whose value has been chosen to pass
the necessary IF frequency range. For operation to DC this
pin must not source or sink more than 2mA of current or die
non-function and possible die failure will result.
3
RF
This pin is DC coupled and matched to 50 Ohms.
GND
The backside of the die must connect to RF ground.
MIXERS - DOUBLE-BALANCED - CHIP
4
4-6
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC128
v03.1007
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
MIXERS - DOUBLE-BALANCED - CHIP
4
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4-7