SRAM & FLASH Mixed Module AS8SF384K32 128K x 16 SRAM & 512K x 16 FLASH PIN ASSIGNMENT (Top View) SRAM / FLASH MEMORY ARRAY 68 Lead CQFP (QT) FEATURES NC A0 A1 A2 A3 A4 A5 FCS\1 GND FCS\2 SWE\1 A6 A7 A8 A9 A10 VCC • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in decoupling caps and multiple ground pins for low noise • Organized as 128K x 16 SRAM and 512K x 16 FLASH • Low power CMOS • TTL Compatible Inputs and Outputs • Both blocks of memory are user configurable as 256K x 8 FLASH MEMORY FEATURES • • • Operation with single 5V (±10%) Eight equal sectors of 64K bytes Any combination of sectors can be concurrently erased Supports full chip erase Embedded erase and program algorithms 20,000 program/erase cycles Hardware write protection OPTIONS MARKINGS • Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) • Timing SRAM 35ns NC NC A18 FWE\2 FWE\1 SWE\2 A17 SCS\2 OE\ SCS\1 A16 A15 A14 A13 A12 A11 VCC • • • • FI/O0 FI/O1 FI/O2 FI/O3 FI/O4 FI/O5 FI/O6 FI/O7 GND FI/O8 FI/O9 FI/O10 FI/O11 FI/O12 FI/O13 FI/O14 FI/O15 SI/O0 SI/O1 SI/O2 SI/O3 SI/O4 SI/O5 SI/O6 SI/O7 GND SI/O8 SI/O9 SI/O10 SI/O11 SI/O12 SI/O13 SI/O14 SI/O15 FLASH 90ns PIN DESCRIPTION XT IT -35 • Package Ceramic Quad Flatpack QT PIN A 0-18 FUNCTION Address Inputs SI/O 0-15 SRAM Data Input / Outputs FI/O 0-15 OE\ SWE\ 1-2 FLASH Data Input / Outputs Output Enable SRAM Write Enables FWE\ FLASH Write Enables 1-2 SCS\ 1-2 SRAM Chip Selects FCS\ 1-2 FLASH Chip Selects VCC GND NC Power Supply Ground No Connect GENERAL DESCRIPTION The AS8SF384K32 is a 2 MEG CMOS SRAM and 8 MEG CMOS FLASH Module organized as 128K x 16 (SRAM) and 512K x 16 (FLASH). These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. For more detailed information regarding the FLASH internal operations, programming, command definitions and functional descriptions, please see the AS8F512K32 data sheet located on our website at www.austinsemiconductor.com AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 1 SRAM & FLASH Mixed Module AS8SF384K32 FCS\2 FEW\2 SRAM 128K x 8 M1 SCS\2 SWE\2 / A0-A16 / A0-A16 FI/O 8 - FI/O 15 FI/O 0 -FI/O 7 SI/O 8 - SI/O 15 SRAM 128K x 8 M0 SCS\1 SWE\1 OE\ A0 - A18 FLASH 512K x 8 M2 FCS\1 FWE\1 FLASH 512K x 8 M3 SI/O 0 - SI/O 7 BLOCK DIAGRAM SRAM TRUTH TABLE MODE Read OE\ L SCS\ L SWE\ H I\0 DOUT POWER Active Write Standby X X L H L X DIN High Z Active Standby FLASH TRUTH TABLE OPERATION Read Output Disable Standby and Write Inhibit Write Sector Protect Verify Sector Protect Sector Unprotect Verify Sector Unprotect Erase Operations USER BUS OPERATIONS FCS\1-4 OE\ FWE\1-4 A0 A1 A6 A9 L L H X X X X L H H X X X X H X X X X X X L H L A0 A1 A6 A9 L VID L X X X VID L L H H H L VID see note 2 see note 2 L H H H see note 2 L L H H H H VID L H see note 1 see note 1 see note 1 see note 1 see note 1 I/O Data Out High Z High Z Data In X Data Out Data Out Data Out see note 1 LEGEND: L = VIL, H = VIH, X = Don't Care, VID = 12V, See DC Charateristics for voltage levels NOTE: 1. See Chip/Sector Erase Operation Timings and Alternate CE\ Controlled Write Operation Timings of AS8F512K32 data sheet. 2. See Chart 1 (pg. 6) of AS8F512K32 data sheet. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 2 SRAM & FLASH Mixed Module AS8SF384K32 This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information. ABSOLUTE MAXIMUM RATINGS* Voltage of Vcc Supply Relative to Vss.................-.5V to +7V Storage Temperature.....................................-65°C to +150°C Short Circuit Output Current(per I/O)............................20mA Voltage on Any Pin Relative to Vss................-.5V to Vcc+1V Maximum Junction Temperature**.............................+150°C *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. PARAMETER Flash Data Retention Flash Endurance (write / erase cycles) 10 years 20,000 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) SRAM 1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. The specified value applies with the outputs FLASH NOTES: 1. Icc active while Embedded Program or Embedded Erase Algorithm is in progress. 2. Not 100% tested. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 3 SRAM & FLASH Mixed Module AS8SF384K32 CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC)1 NOTE: 1. This parameter is sampled. AC TEST CONDITIONS Test Specifications Input pulse levels.........................................VSS to 3V Input rise and fall times.........................................5ns Input timing reference levels...............................1.5V Output reference levels........................................1.5V Output load..............................................See Figure 1 NOTES: Vz is programmable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit. AS8SF384K32 Rev. 1.3 01/10 Figure 1 Micross Components reserves the right to change products or specifications without notice. 4 SRAM & FLASH Mixed Module AS8SF384K32 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%) SRAM AC DESCRIPTION SYMBOL READ CYCLE READ cycle time Address access time Chip select access time Output hold from address change Output enable to output valid 1 Chip select to output in low Z Output enable to output in low Z 1 Chip disable to output in high Z 1 Output disable to output in high Z 1 t RC AA t ACS t OH t AOE t LZCS t LZOE t HZCS t HZOE -35 UNITS MIN MAX 35 t 35 35 2 20 3 0 20 20 ns ns ns ns ns ns ns ns ns SRAM AC (SWE\ & SCS\ controlled) DESCRIPTION SYMBOL WRITE CYCLE WRITE cycle time Chip select to end of write Address valid to end of write Address setup time Address hold from end of write Data valid to end of write Data hold time WRITE pulse width 1 Output active from end of write 1 Write enable to output in High-Z t WC CW t AW t AS t AH t DS t DH t WP1 t LZWE t HZWE t -35 UNITS MIN MAX 35 25 25 0 0 20 0 25 2 20 ns ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed but not tested. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 5 SRAM & FLASH Mixed Module AS8SF384K32 SRAM READ CYCLE NO. 1 tRC A0-A16 tOH SI/O0-15 tAA PREVIOUS DATA VALID DATA VALID SRAM READ CYCLE NO. 2 tRC ADtAA SCS\ t tLZCS ACS tHZCS SOE\ SI/O0-15 AS8SF384K32 Rev. 1.3 01/10 tAOE tLZOE HIGH IMPED- DATA VALID Micross Components reserves the right to change products or specifications without notice. 6 SRAM & FLASH Mixed Module AS8SF384K32 SRAM WRITE CYCLE NO. 1 (Chip Select Controlled) tWC A0-A16 tAW SCS\ tAS tAH tCW tWP11 SWE\ tHZWE tDS SI/O0-15 tLZtDH DATA VALID WRITE CYCLE NO. 2 (Write Enable Controlled) tWC A0-A16 SCS\ tAS tAW tAH tCW tWP21 SWE\ tDS SI/O0-15 AS8SF384K32 Rev. 1.3 01/10 tDH DATA VALID Micross Components reserves the right to change products or specifications without notice. 7 SRAM & FLASH Mixed Module AS8SF384K32 FLASH ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (READ ONLY) (-55°C < TA < 125°C; VCC = 5V -5%/+10%) Parameter Symbol JEDEC Std. Speed Options Test Setup CE\=VIL, OE\=VIL Parameter Description -35 Units Min 90 ns Max 90 ns tAVAV tRC Read Cycle Time (Note 3) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable Low to Output Valid Max 90 ns tGLQV tOE Output Enable to Output Delay Max 35 ns Read Toggle and Data\Polling Chip Enable High to Output High Z (Note 2, 3) Output Enable to Output High Z (Note 2,3) Output Hold Time from Addresses, CE\ or OE\, Whichever Occurs First Min 0 ns Min 10 ns Max 20 ns 20 ns 0 ns tOEH tEHQZ tHZ tGHQZ tDF tAXQX tOH CE\=VIL, OE\=VIL Output Enable Hold Time (Note 3) Min NOTES: 1. See Test Specification for test conditions. 2. Output driver disable time. 3. Guaranteed but not Tested. Read Operation Timings Addresses Addresses Stable FCS\ t t DF CE t CE FWE\ High-Z Outputs t OH Output Valid High-Z OV AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 8 SRAM & FLASH Mixed Module AS8SF384K32 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55°C < TA < 125°C; VCC = 5V +/- 10%) WRITE / ERASE / PROGRAM Erase and Program FWE\ Controlled Parameter Symbol JEDEC Std. tAVAV tWC Write Cycle Time Min Speed Options -90 90 tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 ns tDVWH tDS Data Setup Time Min 45 ns tWHDX tDH tOES Write Enable High to Input Transition Output Enable Setup Time Read Recover time Before Write (OE\ high to FWE\ low) Min 0 0 ns Min Units ns ns tGHWL tGHWL tELWL tCS FSC\ Setup Time Min 0 ns tWHEH tCH FSC\ Hold Time Min ns tWLWH tWP Write Pulse Width Min 0 45 ns tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH2 tWHWH3 tVCHEL AS8SF384K32 Rev. 1.3 01/10 Parameter Description Min 0 ns tWHWH1 Programming Operation tWHWH2 Sector Erase Operation Min 300 us Max 15 sec tWHWH3 Chip Erase Operation VCC Setup Time Chip Program Time Max Min Max 120 50 11 sec us sec Micross Components reserves the right to change products or specifications without notice. 9 SRAM & FLASH Mixed Module AS8SF384K32 Program Operation Timings t t AS WC 555h Addresses PA PA PA t AH FCS\ t t GH- CH OE\ t WHWH1 t WP FWE\ t CS FI/O0 - FI/O15 t DS AOh t WPH DH t Status PD DOUT Vcc NOTE: PA= Program Address, PD= Program data, DOUT is the true data at the program address. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 10 SRAM & FLASH Mixed Module AS8SF384K32 Chip/Sector Erase Operation Timings t t AS WC 2AAh Addresses SA 555h for Chip Erase FCS\ VA VA t AH t t CH GH- OE\ t WHWH2 t WP FWE\ t CS FI/O0 - FI/O7 or FI/O8 - FI/ t DS 55h t WPH DH t In Progress 30th Complete 10 for Chip Erase Vcc NOTE: SA= Sector Address. VA = Valid Address for reading status data. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 11 SRAM & FLASH Mixed Module AS8SF384K32 Data Polling Timings (During Embedded Algorithms) t RC Addresses VA VA VA t CE FCS\ t CH t OE OE\ t OEH t DF FWE\ t OH FI/O7 or FI/O15 FI/O0 - FI/O6 or FI/O8 - FI/O14 Complement Complement True Valid Data High-Z Status Data Status Data True Valid Data High-Z NOTE: VA=Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Toggle Bit Timings ( During Embedded Algorithms) t RC Addresses VA VA VA VA t CE FCS\ t CH t OE OE\ t OEH FWE\ FI/O6 / FI/O2 or FI/O14 / FI/O10 t DF t OH Valid Status Valid Status Valid Status Valid Status (first read) NOTE: VA=Valid address; not required for FI/O6 or FI/O14. Illustration shows first two status cycles after command sequence, last status read cycle, and array data read cycle. AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 12 SRAM & FLASH Mixed Module AS8SF384K32 MECHANICAL DEFINATIONS* Package Designator QT AS8SF384K32 Rev. 1.3 01/10 Micross Components reserves the right to change products or specifications without notice. 13 SRAM & FLASH Mixed Module AS8SF384K32 ORDERING INFORMATION EXAMPLE's: AS8SF384K32QT-35/XT or AS8SF384K32QT-35/MIL Device Number Package Type Speed ns Process AS8SF384K32 QT -35 /* *AVAILABLE PROCESSES /IT = Industrial Temperature Range /XT = Extended Temperature Range /MIL = MIL-STD-883 para.1.2.2. NC AS8SF384K32 Rev. 1.3 01/10 -40oC to +85oC -55oC to +125oC -55oC to +125oC Micross Components reserves the right to change products or specifications without notice. 14