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Pb Free Product
BLM2008E
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2008E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
Schematic diagram
● VDS = 20V,ID =6A
Typ.RDS(ON) = 17m Ω @ VGS=4.5V
Typ.RDS(ON) = 22m Ω @ VGS=2.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
Marking and pin Assignment
● Surface Mount Package
Application
●PWM application
●Load switch
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2008E
BLM2008E
TSSOP-8
Ø330mm
12mm
3000 units
Absolute Maximum Ratings (TA=25℃
℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
Unit
20
V
±12
V
6
A
30
A
1.5
W
-55 To 150
℃
83.3
℃/W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
-
V
Off Characteristics
Drain-Source Breakdown Voltage
Page1
BVDSS
VGS=0V ID=250µA
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BLM2008E
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
µA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
-
-
±10
µA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250µA
0.45
0.7
1.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
-
17
24
mΩ
VGS=2.5V, ID=5A
-
22
31
mΩ
VDS=5V,ID=6A
-
20
-
S
-
650
-
PF
-
140
-
PF
-
PF
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
60
Turn-on Delay Time
td(on)
-
0.5
nS
Turn-on Rise Time
tr
VDD=10V,RL=1. 5Ω
-
1
nS
td(off)
VGS=5V,RGEN=3Ω
-
12
nS
-
4
nS
-
8
nC
-
2.5
-
nC
-
3
-
nC
-
-
1.2
V
-
-
6
A
VDS=10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=6A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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Pb Free Product
BLM2008E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
90%
Vout
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4
Safe Operation Area
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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Pb Free Product
ID- Drain Current (A)
Normalized On-Resistance
BLM2008E
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Rdson (mΩ)
C Capacitance (pF)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
Page4
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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r(t),Normalized Effective
Transient Thermal Impedance
BLM2008E
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
Page5
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Pb Free Product
BLM2008E
TSSOP-8 PACKAGE INFORMATION
Symbol
D
E
b
c
E1
A
A2
A1
e
L
H
Θ
Page6
Dimensions In Millimeters
Min
Max
2.900
3.100
4.300
4.500
0.190
0.300
0.090
0.200
6.250
6.550
1.100
0.800
1.000
0.020
0.150
0.65(BSC)
0.500
0.700
0.25(TYP)
1°
7°
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