Pb Free Product BLM2004NE N-Channel Enhancement Mode Power MOSFET Description The BLM2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ● VDS = 20V,ID =6A Typ.RDS(ON) = 17m Ω @ VGS=4.5V Typ.RDS(ON) = 22m Ω @ VGS=2.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application Marking and pin Assignment ●PWM application ●Load switch SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2004NE BLM2004NE SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃ ℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 20 V ±12 V 6 A 30 A 1.25 W -55 To 150 ℃ 100 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Page1 www.belling.com.cn RθJA V2.1 Pb Free Product BLM2004NE Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 µA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±10 µA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 0.45 0.7 1.0 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=6A - 17 24 mΩ VGS=2.5V, ID=5A - 22 30 mΩ VDS=5V,ID=6A - 20 - S - 650 - PF - 140 - PF - PF On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 60 Turn-on Delay Time td(on) - 0.5 nS Turn-on Rise Time tr VDD=10V,RL=1. 5Ω - 1 nS td(off) VGS=5V,RGEN=3Ω - 12 nS - 4 nS - 8 nC - 2.5 - nC - 3 - nC - - 1.2 V - - 6 A VDS=10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=6A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page2 www.belling.com.cn V2.1 Pb Free Product BLM2004NE TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) 90% Vout VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance Page3 www.belling.com.cn V2.1 Pb Free Product ID- Drain Current (A) Normalized On-Resistance BLM2004NE Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Page4 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.belling.com.cn V2.1 Pb Free Product r(t),Normalized Effective Transient Thermal Impedance BLM2004NE Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance Page5 www.belling.com.cn V2.1 Pb Free Product BLM2004NE SOT23-6L PACKAGE INFORMATION Page6 www.belling.com.cn V2.1