ACE7333M P-Channel 30-V (D-S) MOSFET Description The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features PRODUCT SUMMARY rDS(on) (mΩ) ID(A) 20 @ VGS = -10V -10.9 -30 36 @ VGS = -4.5V -8.1 Low rDS(on) trench technology Low thermal impedance Fast switching speed VDS (V) Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V VGS ±20 V Gate-Source Voltage O TA=25 C Continuous Drain Current a ID TA=70 OC Pulse Drain Current b Continuous Drain Current (Diode Continuous) a -10.9 -8.2 IDM -50 IS -4.5 O Power Dissipation a TA=25 C A 3.5 PD TA=70 OC A W 2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 Parameter Maximum Junction-to-Ambient a O C Symbol Maximum Units t≦10sec Steady State RθJA 35 ℃/W 81 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.2 1 ACE7333M P-Channel 30-V (D-S) MOSFET Packaging Type Ordering information DFN3*3-8L ACE7333M NN + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics Parameter Symbol Conditions Min. 1 Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -25 On-State Drain-Current a ID(on) Static Drain-Source On-Resistance a rDS(ON) Forward Transconductance a gfS VDS=-15V,ID=-8.7A 20 S VSD IS=-2.3A ,VGS=0V -0.76 V Diode Forward Voltage a VDS=-5V, VGS=-10V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tf Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -15 nA uA A VGS=-10V,ID=-8.7A 20 VGS=-4.5V,ID=-7A 36 Dynamic Total Gate Charge V mΩ b VDS=-15V, VGS=-4.5V, ID=-8.7A 22 6.5 nC 9.8 8 VDS=-15V, ,RL=1.8Ω ID=-8.7A ,VGEN=-10V RGEN=6Ω, 35 ns 85 51 VDS=15V, VGS=0V f=1MHz 1794 242 pF 224 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.2 2 ACE7333M P-Channel 30-V (D-S) MOSFET Typical Electrical Characteristics VER 1.2 3 ACE7333M P-Channel 30-V (D-S) MOSFET VER 1.2 4 ACE7333M P-Channel 30-V (D-S) MOSFET Packing Information DFN3*3-8L DIM A A1 b c D D1 E E1 E2 E3 e L L1 θ1 MILLIMETERS MIN NOM MAX 0.700 0.80 0.900 0.00 0.05 0.24 0.30 0.35 0.10 0.152 0.25 3.00 BSC 2.35 BSC 3.20 BSC 3.00 BSC 1.75 BSC 0.575 BSC 0.65 BSC 0.45 0.55 0.65 0 0.15 O O 0 10 12 O MIN 0.0276 0.000 0.009 0.004 0.018 0 0O INCHES NOM 0.0315 0.012 0.006 0.118 BSC 0.093 BSC 0.126 BSC 0.118 BSC 0.069 BSC 0.023 BSC 0.026 BSC 0.022 10 O MAX 0.0354 0.002 0.014 0.010 0.026 0.006 12O VER 1.2 5 ACE7333M P-Channel 30-V (D-S) MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6