ACE2358M N-Channel 60-V MOSFET Description ACE2358M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications • • • White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID TA=70℃ Pulse Drain Current b Continuous Source Current (Diode Conduction) Power Dissipation a a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature 3.1 A 2.5 IDM 1.5 A IS 1.9 A PD TJ/TSTG 1.3 W 0.8 O -55/150 C *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol Maximum t <= 10 sec Steady State RθJA 100 166 Units O C/W VER 1.1 1 ACE2358M N-Channel 60-V MOSFET Packaging Type SOT-23-3 D G S Ordering information ACE2358MBM + H Halogen - free Pb - free BM : SOT-23-3 VER 1.1 2 ACE2358M N-Channel 60-V MOSFET Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage VGS(th) VDS = 0 V, VGS = ±20 V ±100 VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS 1 VDS = 48 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs VDS = 15 V, ID = 2.5 A 10 S Diode Forward Voltage a VSD IS = 1 A, VGS = 0 V 0.74 V VDS = 5 V, VGS = 10 V 1 V 5 uA uA A VGS = 10 V, ID = 2.5 A 92 VGS = 4.5 V, ID = 2 A 107 mΩ Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.7 Turn-On Delay Time td(on) 3 Rise Time tr VDS = 30 V, RL = 12 Ω, ID = 2.5 A, 6 Turn-Off Delay Time td(off)* VGEN = 10 V, RGEN = 6 Ω 17 Fall Time tf 5 Input Capacitance Ciss 330 Output Capacitance Coss Reverse Transfer Capacitance Crss 4 VDS = 30 V, VGS = 4.5 V, ID = 2.5 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1.0 nC nS 31 pF 27 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE2358M N-Channel 60-V MOSFET Typical Performance Characteristics ID-Drain Current (A) 1.On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VDS - Source –to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE2358M N-Channel 60-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ-Junction Temperature(OC) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (sec) 10.Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE2358M N-Channel 60-V MOSFET Packing Information SOT-23-3 SYMBOLS A A1 A2 B C D E E1 e e1 L L1 L2 R Θ Θ1 DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.935 0.95 1.10 0.01 0.10 0.85 0.90 0.925 0.30 0.40 0.50 0.10 2.70 2.60 1.40 0.15 2.90 2.80 1.60 0.25 3.10 3.00 1.80 0.30 0.95BSC 1.90BSC 0.40 0.60REF 0.25BSC 0.60 0.10 0° 4° 7°NOM 8° Unit: mm VER 1.1 6 ACE2358M N-Channel 60-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7