JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors JC(T EMF5 SOT-563 Dual Transistors (PNP+NPN) FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: F5 Tr1 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-10mA Collector-emitter saturation voltage Transition frequency Collector output capacitance www.cj-elec.com VCE(sat) fT Cob 270 680 IC=-200mA, IB=-10mA -0.25 V VCE=-2V, IE=-10mA, f=100MHz 260 MHz VCB=-10V, IE=0, f=1MHz 6.5 pF 1 C,Oct,2014 A,Jun,2014 Tr2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~+40 V IO 30 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Symbol Min. VI(off) 0.5 Typ Max. VI(on) 3.0 VCC=5V, IO=100μA VO=0.3V, IO=2mA V IO/II=10mA/0.5mA II 0.18 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 68 Input resistance R1 32.9 47 61.1 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency www.cj-elec.com fT 0.1 V Conditions 0.3 Input current VO(on) Unit VO=5V, IO=5mA 250 2 KΩ - MHz VCE=10V, IE=-5mA, f=100MHz C,Oct,2014 Symbol A A1 e c D b E1 E L θ www.cj-elec.com 3 Dimensions In Millimeters Min. Max. 0.525 0.600 0.000 0.050 0.450 0.550 0.090 0.160 1.500 1.700 0.170 0.270 1.100 1.300 1.500 1.700 0.100 0.300 7° REF. Dimensions In Inches Min. Max. 0.021 0.024 0.000 0.002 0.018 0.022 0.004 0.006 0.059 0.067 0.007 0.011 0.043 0.051 0.059 0.067 0.004 0.012 7° REF. C,Oct,2014 A,Jun,2014 www.cj-elec.com 4 C,Oct,2014