UMG3N General purpose transistors (dual transistors) SOT-353 FEATURES z Two DTC143T chips in a package z Mounting possible with SOT-353 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. 1 Marking: G3 (3) (2) R1 DTr2 Equivalent circuit (4) (1) R1 DTr1 (5)/(6) Absolute maximum ratings (Ta=25℃) Symbol Parameter LIMITS Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 mW Tj Junction temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA hFE VCE=5V,IC=1mA DC current gain Collector-emitter saturation voltage VCE(sat) Transition frequency fT Input resistor R1 V 100 600 IC=5mA,IB=0.25mA 0.3 VCE=10V,IE=-5mA, f=100MHz 250 3.29 4.7 V MHz 6.11 kΩ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05