SOT-363 Plastic-Encapsulate Transistors UMX1N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMX1N
General purpose transistors(dual transistors)
SOT-363
FEATURES
z
Two 2SC2412K chips in a SOT-363 package
z
Mounting possible with SOT-363 automatic mounting machines
z
Transistor elements are independent, eliminating interference
z
Mounting cost and area can be cut in half
(3)
(2)
(1)
Tr1
Tr2
MARKING:X1
(4)
(5)
(6)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
M ax
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
120
560
IC=50mA,IB=5mA
0.4
VCE=12V,IC=2mA,f=100MHz
180
VCB=12V,IE=0,f=1MHz
2.0
V
MHz
3.5
pF
B,Feb,2012