H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 4 D 1 2 3 1. Gate 2. Drain 3. Source 4. Drain G H7P0601DS 1 2 S 3 H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 1 of 8 Symbol VDSS VGSS ID ID (pulse)Note1 IDR Rating –100 ±20 –15 –60 –15 Unit V V A A A IAP Note3 EAR Note3 Pch Note2 Tch Tstg –12 14.4 30 150 –55 to +150 A mJ W °C °C H7P1002DL, H7P1002DS Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr Turn-off delay time Fall time Body-drain diode forward voltage td(off) tf VDF Body-drain diode reverse recovery time Note: trr 4. Pulse test REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 2 of 8 Min –100 Typ — Max — Unit V Test Conditions ID = –10 mA, VGS = 0 ±20 — — –1.0 — — 7.2 — — — — — — — — — — — — 85 105 12 2600 190 120 45 6.5 9.0 23 45 — ±10 –10 –2.5 105 150 — — — — — — — — — V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –100 V, VGS = 0 ID = –1 mA, VDS = –10 V Note4 ID = –7.5 A, VGS = –10 V Note4 ID = –7.5 A, VGS = –4.5 V Note4 ID = –7.5 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1 MHz — — — — 80 13 –0.91 50 — — — — ns ns V ns VDD = –50 V VGS = –10 V ID = –15 A VGS = –10 V, ID = –7.5 A RL = 4.0 Ω Rg = 4.7 Ω IF = –15 A, VGS = 0 IF = –15 A, VGS = 0 diF/dt = 100 A/µs H7P1002DL, H7P1002DS Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –100 ID (A) Drain Current 20 10 DC 0 25 50 75 100 Case Temperature –20 µs –1 –0.3 –0.1 125 Ta = 25°C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 –300 –1000 150 Tc (°C) Drain to Source Voltage –10 V –8 V –20 Pulse Test VDS = –10 V Pulse Test –3.5 V ID (A) –15 –5 V –4 V –3 V –10 –5 –15 –10 –5 Tc = 75°C 25°C VGS = –2 V 0 0 –2 –4 –6 Drain to Source Voltage –8 –25°C 0 –10 VDS (V) Pulse Test ID = –10 A –0.8 –0.6 –5 A –0.4 –2 A –0.2 0 0 –4 –8 –12 Gate to Source Voltage –16 –20 VGS (V) REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 3 of 8 –1 –2 –3 –4 –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (mΩ) –1.2 0 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 VDS (V) Typical Transfer Characteristics Drain Current ID (A) 10 O m pe s( ra 1 tio sh n ot (T ) c= 25 °C ) Operation in this area is limited by RDS (on) –3 Typical Output Characteristics Drain to Source Saturation Voltage VDS (on) (V) 0 –0.03 0 Drain Current = s 30 –10 10 µs 40 PW m Channel Dissipation 10 –30 1 Pch (W) 50 1000 Pulse Test 500 200 VGS = –4 V 100 –10 V 50 20 10 –1 –2 –5 –10 Drain Current –20 –50 –100 ID (A) H7P1002DL, H7P1002DS Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test –2 A, –5 A 0.20 ID = –10 A 0.15 VGS = –4.5 V 0.10 –2 A, –5 A –10 A –10 V 0.05 0 –50 0 50 100 Case Temperature 150 100 30 Tc = –25°C 10 25°C 3 75°C 1 0.3 VDS = –10 V Pulse Test 0.1 –0.1 Tc (°C) Capacitance C (pF) Reverse Recovery Time trr (ns) 100 30 10 3 –1 –3 –10 Reverse Drain Current –30 300 Crss IDR (A) 0 –4 –8 VDD = –100 V –50 V –25 V –12 –160 16 32 Gate Charge 48 64 Qg (nc) REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 4 of 8 –5 –10 –15 –20 –25 –30 –16 80 1000 Switching Time t (ns) ID = –15 A VGS 0 Switching Characteristics VDS –80 VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) VGS (V) VDD = –25 V –50 V –100 V Coss 100 10 –100 Gate to Source Voltage VDS (V) Drain to Source Voltage 0 0 –100 1000 Dynamic Input Characteristics –120 –30 Ciss 3000 30 di / dt = 100 A / µs VGS = 0, Ta = 25°C –40 –10 10000 300 –0.3 –3 Typical Capacitance vs. Drain to Source Voltage Pulse Test 1 –0.1 –1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 –0.3 300 td(off) tr 100 td(on) 30 tf 10 3 VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % RG = 4.7 Ω 1 –0.1 –0.3 –1 –3 Drain Current –10 –30 ID (A) –100 H7P1002DL, H7P1002DS Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) –20 –15 –10 V –10 –5 V VGS = 0, 5 V –5 Pulse Test 0 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage –2.0 20 IAP = –12 A VDD = –50 V duty < 0.1 % Rg ≥ 50 Ω 16 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 4.17°C/W, Tc = 25°C 0.05 2 0.0 0.1 0.03 1s 0.01 10 µ ho 1 0.0 e uls tp D= PDM PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin –15 V 50 Ω 0 REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 5 of 8 VDD H7P1002DL, H7P1002DS Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. Rg 90% RL 90% 90% Vin –10 V VDD = –30 V Vout td(on) REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 6 of 8 10% tr 10% td(off) tf H7P1002DL, H7P1002DS Package Dimensions • H7P1002DL JEITA Package Code RENESAS Code PRSS0004ZD-B Previous Code MASS[Typ.] DPAK(L)-(2) / DPAK(L)-(2)V 0.42g 1.7 ± 0.5 Package Name DPAK(L)-(2) 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 Unit: mm 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 • H7P1002DS JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V 6.5 ± 0.5 5.4 ± 0.5 (0.1) MASS[Typ.] 0.28g 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 7 of 8 Unit: mm (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H7P1002DL, H7P1002DS Ordering Information Part No. H7P1002DL-E H7P1002DSTL-E Quantity 3200 pcs 3000 pcs REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 8 of 8 Shipping Container Hold Box, Radial Taping Taping Sales Strategic Planning Div. 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