HAT2201WP Silicon N Channel Power MOS FET Power Switching REJ03G1679-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 1 of 7 Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 Note 2 EAR Note3 Pch θch-c Note3 Tch Tstg Ratings 100 ±20 15 60 15 15 22.5 15 8.33 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C HAT2201WP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 2 of 7 Min 100 — — 3.5 — — 12 — — — — — — — — — — Typ — — — — 34 35 20 1450 180 65 0.9 21 7.6 5.2 18 3 33 Max — ±0.1 1 5.0 43 49 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns ns — — — 4.1 0.84 45 — 1.10 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 8 V Note4 ID = 7.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 15 A VGS = 10 V, ID = 7.5 A VDD ≅ 30 V RL = 4 Ω Rg = 4.7 Ω IF = 15 A, VGS = 0 Note4 IF = 15 A, VGS = 0 diF/ dt = 100 A/ µs HAT2201WP Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 10 µs Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 0 50 100 150 100 µs 1 Operation in this area is 0.1 limited by RDS(on) 200 1 ms PW = 10 ms DC Operation Tc = 25°C 0.01 Ta = 25°C 0.001 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 7V 6.2 V 16 12 5.8 V 8 VGS = 5.5 V 4 Drain Current ID (A) Drain Current ID (A) 10 VDS = 10 V Pulse Test 16 12 Tc = 75°C 8 25°C 4 –25°C Pulse Test 2 4 6 8 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 400 300 200 ID = 5 A 100 0 2A 4 8 12 16 1A 20 Gate to Source Voltage VGS (V) REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 100 Pulse Test 50 VGS = 8 V 10 V 20 10 1 10 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2201WP 100 Pulse Test 80 1 A, 2 A, 5 A 60 VGS = 8 V 40 ID = 1 A, 2 A, 5 A 10 V 20 0 -25 0 25 50 75 100 125 150 25°C 1 75°C 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 Capacitance C (pF) 20 10 0.1 1 10 3000 Ciss 1000 300 Coss 100 Crss 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 15 A 200 VGS 16 VDS = 100 V 50 V 25 V 150 12 VDS 8 50 4 VDS = 100 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 4 of 7 0 40 1000 VGS = 10 V, VDS = 30 V Rg = 4.7 Ω, duty ≤ 1 % Switching Time t (ns) 250 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 10 Drain Current ID (A) 50 0 Tc = –25°C Case Temperature Tc (°C) 100 100 100 100 td(off) td(on) 10 tf tr 1 0.1 1 10 Drain Current ID (A) 100 HAT2201WP Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IF (A) 20 10 V VGS = 0 V, –5 V 16 12 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 IAP = 15 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 Channel Temperature Tch (°C) Source to Drain Voltage VSDF (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 8.33°C/ W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 0.01 10 µ lse t ho 1s 1m 10 m Pulse Width PW (s) REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 5 of 7 D= PW T PW T pu 100 µ 150 100 m 1 10 HAT2201WP Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 2 L • IAP2 • VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V 10% 10% 10% VDS = 30 V 90% td(on) REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 6 of 7 tr 90% td(off) tf HAT2201WP Package Dimensions JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. HAT2201WP-EL-E Quantity 2500 pcs REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 7 of 7 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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