Preliminary H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) : PRSS0004AE-B : LDPAK (S)-(1) ) 4 4 1 1 2 3 : PRSS0004AE-C : LDPAK (S)-(2) ) 2 4 1 3 H7N1002LS D 1. Gate 2. Drain 3. Source 4. Drain G 2 3 H7N1002LM H7N1002LD S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 1 of 8 Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Value 100 ±20 75 300 75 Unit V V A A A IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg 50 166 100 150 –55 to +150 A mJ W °C °C H7N1002LD, H7N1002LS, H7N1002LM Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) Static drain to source on state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 2 of 8 tf VDF trr Min 100 ±20 — — 1.5 — — 57 — — — — — — — — — Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 Max — — ±10 10 2.5 10 15 — — — — — — — — — — Unit V V μA μA V mΩ mΩ S pF pF pF nC nC nC ns ns ns — — — 25 0.93 70 — — — ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 37.5 A, VGS = 10 V Note 4 ID = 37.5 A, VGS = 4.5 V Note 4 ID = 37.5 A, VDS = 10 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 75 A VGS = 10 V, ID = 37.5 A RL = 0.8 Ω Rg = 4.7 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/dt = 100 A/μs H7N1002LD, H7N1002LS, H7N1002LM Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 150 100 50 ID (A) 300 100 Drain Current Channel Dissipation Pch (W) 200 10 0 50 0 100 150 Case Temperature 200 1 30 DC Operation (Tc = 25°C) 3 PW = 10 ms 1 Operation in (1shot) 0.3 this area is limited by RDS(on) 0.1 Ta = 25°C 0.03 0.1 0.3 1 3 10 30 Drain to Source Voltage Tc (°C) Typical Output Characteristics VDS = 10 V Pulse Test 3.6 V 40 Pulse Test 40 30 Drain Current Drain Current VDS (V) 50 10 V 4V 30 3.4 V 20 10 VGS = 3 V 20 Tc = 75°C 25°C 10 –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 0 10 Pulse Test 0.8 0.6 ID = 50 A 0.4 20 A 0.2 10 A 0 0 5 10 15 20 Gate to Source Voltage VGS (V) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 3 of 8 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) 1.0 1 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 100 300 Typical Transfer Characteristics ID (A) ID (A) 50 1 10 0 μs 0 m μs s 50 Pulse Test 20 VGS = 4.5 V 10 10 V 5 2 1 0.5 2 5 10 20 50 Drain Current ID (A) 100 200 H7N1002LD, H7N1002LS, H7N1002LM Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test 32 50 A 24 ID = 10 A, 20 A 16 VGS = 4.5 V 50 A 8 10 A, 20 A 10 V 0 –40 0 40 80 120 Case Temperature 160 200 100 Tc = –25°C 10 25°C 1 75°C 0.1 VDS = 10 V Pulse Test 0.02 0.01 Tc (°C) 100 20000 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 100 50 20 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0.1 Ciss 5000 2000 1000 Coss 500 200 Crss 100 50 VGS = 0 f = 1 MHz 20 0.3 1 3 10 Reverse Drain Current 30 100 0 10 160 16 VDD = 25 V 50 V 80 V 120 12 VDS 80 8 40 4 VDD = 80 V 50 V 25 V 0 0 80 160 240 320 Gate Charge Qg (nc) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 4 of 8 40 50 0 400 1000 Switching Time t (ns) VGS VGS (V) 20 ID = 75 A 30 Switching Characteristics Gate to Source Voltage 200 20 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics VDS (V) 1 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage 0.1 300 tr td(off) 100 td(on) 30 tf 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % Rg = 4.7 Ω 0.3 1 3 Drain Current 10 30 ID (A) 100 H7N1002LD, H7N1002LS, H7N1002LM Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 80 10 V 60 40 VGS = 0, –5 V 5V 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP = 50 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 160 120 80 40 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 0.1 θch – c = 1.25°C/W, Tc = 25°C 0.05 PDM 0.02 0.03 0.0 1 t ho D= lse PW pu T 1s 0.01 10 μ PW T 100 μ 1m 10 m 100 m 10 1 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 5 of 8 VDD H7N1002LD, H7N1002LS, H7N1002LM Preliminary Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Rg Waveform Vin Vout Vin 10 V 10% RL VDS = 30 V 10% 90% td(on) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 6 of 8 10% tr 90% td(off) tf H7N1002LD, H7N1002LS, H7N1002LM Preliminary Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g (1.5) 10.0 2.54 ± 0.5 REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 7 of 8 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code ⎯ (1.4) Package Name LDPAK(L) 2.2 H7N1002LD, H7N1002LS, H7N1002LM JEITA Package Code ⎯ RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g 7.8 6.6 (2.3) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) Preliminary 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name H7N1002LD-E H7N1002LSTL-E H7N1002LMTL-E Quantity 500 pcs 1000 pcs 1000 pcs REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 8 of 8 Shipping Container Box (Conductive Sack) Taping Taping Sales Strategic Planning Div. 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