SSF10N60
600V N-Channel MOSFET
Main Product Characteristics
VDSS
600V
RDS(on)
0.69Ω (typ.)
ID
10A
TO-220
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
10
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
6
IDM
Pulsed Drain Current②
40
Power Dissipation③
156
W
Linear Derating Factor
1.25
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=14.2mH
641
mJ
IAS
Avalanche Current @ L=14.2mH
9.5
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.8
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
600
—
—
—
0.69
0.8
—
1.60
—
2
—
4
—
1.8
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
25.09
—
Qgs
Gate-to-Source charge
—
7.74
—
Qgd
Gate-to-Drain("Miller") charge
—
8.87
—
td(on)
Turn-on delay time
—
20.2
—
tr
Rise time
—
37.2
—
td(off)
Turn-Off delay time
—
65.2
—
tf
Fall time
—
40.2
—
Ciss
Input capacitance
—
1257
—
Coss
Output capacitance
—
159
—
Crss
Reverse transfer capacitance
—
1.36
—
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 5A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 600V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 9.5A,
nC
VDS=480V,
VGS = 10V
VGS=10V, VDS=320V,
ns
RL=33.8Ω,RGEN=25Ω
ID=9.5A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
10
A
—
—
40
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.92
1.4
V
IS=10A, VGS=0V
trr
Reverse Recovery Time
—
745
—
ns
TJ = 25°C, IF =9.5A,
Qrr
Reverse Recovery Charge
—
4841
—
nC
di/dt = 100A/μs
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Page 2 of 7
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 7
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
30
0
3
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
0
7
Min
0.087
0.050
0.390
-
Page 6 of 7
50
70
90
10
30
50
Rev.1.0
SSF10N60
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF10N60
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220
50
20
1000
6000
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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6
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Rev.1.0