SSF8N80F 800V N-Channel MOSFET Main Product Characteristics VDSS 800V RDS(on) 1.3Ω (typ.) ID 8A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 8 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 5.1 IDM Pulsed Drain Current② 32 Power Dissipation③ 59 W Linear Derating Factor 0.48 W/°C VDS Drain-Source Voltage 800 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=25mH 760 mJ IAS Avalanche Current @ L=25mH 7.8 A -55 to +150 °C PD @TC = 25°C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSF8N80F 800V N-Channel MOSFET Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 2.1 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg unless otherwise specified Min. Typ. Max. Units V 800 — — — 1.3 1.55 — 3.07 — 2 — 4 — 1.93 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 24 — Qgs Gate-to-Source charge — 7.2 — Qgd Gate-to-Drain("Miller") charge — 9.7 — td(on) Turn-on delay time — 20 — tr Rise time — 37 — td(off) Turn-Off delay time — 59 — tf Fall time — 36 — Ciss Input capacitance — 1106 — Coss Output capacitance — 121 — Crss Reverse transfer capacitance — 5.2 — Ω Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 3.5A TJ = 125℃ V VDS = VGS, ID = 250μA TJ = 125℃ μA VDS = 800V,VGS = 0V TJ = 125℃ nA VGS =30V VGS = -30V ID = 8A, nC VDS= 400V, VGS = 10V VGS=10V, VDS=400V, ns RL=50Ω,RGEN=25Ω ID=8A VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 8 A — — 32 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.74 1.4 V IS=7A, VGS=0V trr Reverse Recovery Time — 968 — ns TJ = 25°C, IF =8A, di/dt = Qrr Reverse Recovery Charge — 5456 — nC 100A/μs www.goodark.com Page 2 of 7 Rev.1.0 SSF8N80F 800V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 3 of 7 Rev.1.0 SSF8N80F 800V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature www.goodark.com Figure 4: Normalized On-Resistance Vs. Case Temperature Page 4 of 7 Rev.1.0 SSF8N80F 800V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 SSF8N80F 800V N-Channel MOSFET Mechanical Data TO220F PACKAGE OUTLINE DIMENSION Symbol A A1 A2 A3 B1 B2 B3 C C1 C2 D D1 D2 D3 E Dimension In Millimeters Min Nom Max 9.960 10.160 10.360 7.000 3.080 3.180 3.280 9.260 9.460 9.660 15.670 15.870 16.070 4.500 4.700 4.900 6.480 6.680 6.880 3.200 3.300 3.400 15.600 15.800 16.000 9.550 9.750 9.950 2.54 (TYP) 1.470 0.700 0.800 0.900 0.250 0.350 0.450 E1 2.540 0.700 E2 E3 E4 1.0*450 0.500 2.760 ϴ www.goodark.com 2.340 0.450 2.560 2.740 0.600 2.960 300 Dimension In Inches Nom 0.400 0.000 0.125 0.372 0.625 0.185 0.263 0.130 0.622 0.384 1.00 (TYP) 0.028 0.031 0.010 0.014 Min 0.392 0.276 0.121 0.365 0.617 0.177 0.255 0.126 0.614 0.376 0.092 0.018 0.101 0.100 0.028 1.0*450 0.020 0.109 Max 0.408 0.000 0.129 0.380 0.633 0.193 0.271 0.134 0.630 0.392 0.058 0.035 0.018 0.108 0.024 0.117 300 Page 6 of 7 Rev.1.0 SSF8N80F 800V N-Channel MOSFET Ordering and Marking Information Device Marking: SSF8N80F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO220F 50 20 1000 6000 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 7 of 7 Rev.1.0