SSF11NS70UF
700V N-Channel MOSFET
Main Product Characteristics
VDSS
700V
RDS(on)
0.45Ω (typ.)
ID
11A
Marking and Pin
TO220F
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF11NS70UF series MOSFET is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low R DS(ON), energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
44
Power Dissipation③
31
W
Linear Derating Factor
0.25
W/°C
VDS
Drain-Source Voltage
700
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
45
mJ
IAS
Avalanche Current @ L=22.5mH
2
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
—
4.0
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
80
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
700
—
—
—
0.45
0.5
—
1.26
—
2
—
4
—
2.17
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
18
—
Qgs
Gate-to-Source charge
—
4.7
—
Qgd
Gate-to-Drain("Miller") charge
—
7.1
—
td(on)
Turn-on delay time
—
10
—
tr
Rise time
—
9.4
—
td(off)
Turn-Off delay time
—
21
—
tf
Fall time
—
4.4
—
Ciss
Input capacitance
—
684
—
Coss
Output capacitance
—
42
—
Crss
Reverse transfer capacitance
—
4.5
—
Ω
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID= 11A,
nC
VDS= 300V,
VGS = 10V
VGS=10V, VDS=300V,
ns
RL=54.5Ω,RGEN=4.7Ω
ID=5.5A
VGS = 0V
pF
VDS = 50V
ƒ = 800KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
—
—
1.2
V
Page 2 of 7
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=1A, VGS=0V
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
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Page 5 of 7
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP 1
ФP 2
ФP 3
L
L1
L2
Q1
Q2
b1
b2
b3
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Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
o
o
o
3
5
7
o
43
1.180
0.760
-
o
45
1.280
0.800
-
o
47
1.380
0.840
1.420
Page 6 of 7
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
o
3
o
43
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
o
5
o
45
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
o
7
o
47
0.054
0.033
0.056
Rev.1.0
SSF11NS70UF
700V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF11NS70UF
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
TO220F
Tubes/Inner
Box
50
20
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Units/Carton
Box
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.0