SSF26NS60
600V N-Channel MOSFET
Main Product Characteristics
VDSS
600V
RDS(on)
0.135Ω(typ.)
ID
20A
TO-220
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF26NS60 series MOSFET is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low RDS (ON), energy
saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
20
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
13
IDM
Pulsed Drain Current②
80
Power Dissipation③
208
W
Linear Derating Factor
1.66
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=13.8mH
248
mJ
IAS
Avalanche Current @ L=13.8mH
6
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
—
0.6
°C/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
°C/W
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
600
—
—
—
0.135
0.165
—
0.31
—
2
—
4
—
2.54
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
52.1
—
Qgs
Gate-to-Source charge
—
11.2
—
Qgd
Gate-to-Drain("Miller") charge
—
24.9
—
VGS = 10V
td(on)
Turn-on delay time
—
15.2
—
VGS=10V, VDS =300V,
tr
Rise time
—
18.2
—
td(off)
Turn-Off delay time
—
46.0
—
tf
Fall time
—
15.7
—
ID =10A
Ciss
Input capacitance
—
1474
—
VGS = 0V
Coss
Output capacitance
—
149
—
Crss
Reverse transfer capacitance
—
4
—
Ω
V
μA
nA
VGS = 0V, ID = 1mA
VGS=10V,ID = 10A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 20A,
nC
nS
pF
VDS=480V,
RL=30Ω,
RGEN=4.7Ω
VDS = 50V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
20
A
—
—
80
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.88
1.3
V
IS=20A, VGS=0V
trr
Reverse Recovery Time
—
370
—
nS
TJ = 25°C, IF =20A, di/dt =
Qrr
Reverse Recovery Charge
—
5
—
uC
100A/μs
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Page 2 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
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Voltage
Page 5 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
30
0
3
Page 6 of 7
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
0
7
Min
0.087
0.050
0.390
-
50
70
90
10
30
50
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF26NS60
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner InnerBoxes/
Box
CartonBox
Units/Carton
Box
TO-220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.4