SSF1090A
100V N-Channel MOSFET
Main Product Characteristics
VDSS
100V
RDS(on)
72mΩ(typ)
ID
15A
①
D2PAK
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
15
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
10
IDM
Pulsed Drain Current ②
60
Units
A
Power Dissipation ③
41.7
W
Linear Derating Factor
0.28
W/°C
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=30mH
135
mJ
IAS
Avalanche Current @ L=30mH
3
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
3.6
℃/W
Junction-to-Ambient (t ≤ 10s)④
—
60
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
42
℃/W
Electrical Characteristics@TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
unless otherwise specified
Min.
Typ.
Max.
Units
V
100
—
—
—
72
90
—
122.3
—
2
—
4
—
2.76
—
—
—
1
—
—
50
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
-100
—
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 30V, VGS =0V
TJ = 125℃
A
VGS =20V
VGS = -20V
Qg
Total gate charge
—
20.5
—
Qgs
Gate-to-Source charge
—
4.6
—
Qgd
Gate-to-Drain("Miller") charge
—
8.4
—
VGS = 10V
td(on)
Turn-on delay time
—
12.2
—
VGS=10V, VDD=50V,
tr
Rise time
—
36.5
—
td(off)
Turn-Off delay time
—
52.3
—
tf
Fall time
—
31.4
—
ID=9.2A
Ciss
Input capacitance
—
720
—
VGS = 0V
Coss
Output capacitance
—
72
—
Crss
Reverse transfer capacitance
—
49
—
ID = 9.2A
nC
ns
pF
VDD=80V
RL=5.4Ω,
RGEN=18Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
15 ①
A
—
—
60
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.85
1.5
V
IS=3A, VGS=0V,TJ= 25°C
trr
Reverse Recovery Time
—
35.1
—
ns
TJ = 25°C, IF =9.2A, di/dt =
Qrr
Reverse Recovery Charge
—
68.6
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Mechanical Data
D2PAK PACKAGE OUTLINE DIMENSION
Symbol
A
B
C
D1
D2
D3
E
F
G
H
I
K
a1
a2
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Dimension In Millimeters
Min
Max
9.660
10.280
1.020
1.320
8.590
9.400
1.140
1.400
0.700
0.950
5.080 (TYP)
15.090
15.390
1.150
1.400
4.300
4.700
2.290
2.790
0.250 (TYP)
1.300
1.600
0.450
0.650
00
80
Page 6 of 7
Dimension In Inches
Min
Max
0.380
0.405
0.040
0.052
0.338
0.370
0.045
0.055
0.028
0.037
0.200 (TYP)
0.594
0.606
0.045
0.055
0.169
0.185
0.090
0.110
0.010 (TYP)
0.051
0.063
0.018
0.026
10
80
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1090A
Package (Available)
D2PAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
D2PAK
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
6000
Rev.1.0