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AS3635
Xenon Flash Driver with 5V IGBT
Control
General Description
The AS3635 is a highly integrated photoflash charger with
built-in IGBT driver.
A built-in 5V charge-pump guaranties constant IGBT drive at
any battery voltage. The built-in timer turns OFF the
charge-pump 20 seconds after charging.
In circuit fuse trimming allows to set the voltage on the
photoflash capacitor to ±3% accuracy.
The AS3635 is available in a space-saving WL-CSP package
measuring only 1.5mm × 1.5mm and operates over the
-30°C to 85°C temperature range.
Warning: Lethal voltages are present on applications using
AS3635! Do not operate without training to handle high
voltages.
Ordering Information and Content Guide appear at end of
datasheet.
Key Benefits & Features
The benefits and features of AS3635, Xenon Flash Driver with
5V IGBT Control are listed below:
Figure 1:
Added Value Of Using AS3635
Benefits
Features
• Very accurate flash capacitor charging voltage
• Photoflash voltage accuracy programmable to ±3%
(in circuit One Time Programmable - OTP)
• Simple PCB layout, easy integration
• No need for microvias in PCB
• High integration reduces total BOM size
• Few external components
• Built-in 5V charge-pump for IGBT gate drive
• No Schottky diode needed
• No output voltage divider needed
• Fast re-charge time
• Charge time < 4sec @ Vbat>2.7V, CFLASH =22μF
• On-chip safety features
• Undervoltage lockout
• Small PCB footprint and overall system size
• Available in a tiny WL-CSP Package
• 3 × 3 balls 0.5mm pitch, 1.5 × 1.5mm package size
ams Datasheet
[v1-49] 2015-Nov-23
Page 1
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AS3635 − General Description
Applications
The AS3635 is ideal for Xenon Flash driver for mobile phones,
PDA and DSC.
Figure 2:
Typical Operating Circuit
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Pinout
Pinout
Figure 3:
Pin Assignments (Top Through View)
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Figure 4:
Pin Description for AS3635
Pin Number
Pin Name
A1
SW
A2
VBAT
Positive supply voltage input
A3
V5V
5V charge pump output
B1
CHARGE
B2
PGND
B3
IGBT_GATE
C1
FLASH
C2
GND
Signal ground - connect to ground (GND)
C3
DONE
Digital open drain output, active low - indicates end of charging
ams Datasheet
[v1-49] 2015-Nov-23
Description
Xenon DCDC converter switching node
Digital input pin, active high - enables charging of photoflash capacitor
Power ground - connect to ground (GND)
IGBT gate control - internally level shifted to 5V (from pin V5V)
Digital input pin, active high - Enables flash (level shifted to IGBT_GATE)
Page 3
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AS3635 − Absolute Maximum Ratings
Absolute Maximum Ratings
Stresses beyond those listed in Absolute Maximum Ratings may
cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any
other conditions beyond those indicated in Electrical
Characteristics, is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 5:
Absolute Maximum Ratings
Parameter
Min
Max
Units
VBAT, V5V to GND
-0.3
+7.0
V
CHARGE, DONE, FLASH to GND
-0.3
VBAT +
0.3
V
IGBT_GATE to GND
-0.3
V5V +
0.3
V
SW to PGND
-0.3
+55.0
V
PGND to GND
0.0
0.0
V
-100
+100
+IIN
mA
Input Pin Current without causing
latchup
Comments
Maximum 7.0V
Connect PGND to GND directly below
the pad (short connection
recommended)
Norm: EIA/JESD78
Continuous Power Dissipation (TAMB = 70°C)
Continuous power dissipation
0.76
W
PT (1)
Electrostatic Discharge
±15000
V
Air Discharge to module; IEC 61000 -4
-2 test bench
±8000
V
Contact Test to module; IEC 61000 -4
-2 test bench
ESD
(HBM pins SW, IGBT_GATE, PGND, V5V)
±2000
V
Norm: MIL 883 E Method 3015
ESD CDM
±500
V
Norm: JEDEC JESD 22-C101C
ESD MM
±100
V
Norm: JEDEC JESD 22-A115-A level A
ESD
(pins VBAT, CHARGE, DONE, FLASH (2))
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Absolute Maximum Ratings
Parameter
Min
Max
Units
Comments
Temperature Ranges and Storage Conditions
Storage Temperature Range
Relative Humidity (non-condensing)
Body Temperature during Soldering
Moisture Sensitivity Level (MSL)
-55
125
°C
5
85
%
Non condensing
260
°C
According to IPC/JEDEC J-STD-020
MSL 1
Represents a max. floor life time of
unlimited
Note(s):
1. Depending on actual PCB layout and PCB used
2. Assembled on PCB board (requires capacitor C VBAT ); special PCB layout (spark gaps) and external resistors required; system test for
completed module (fully capsuled), no permanent interruption of operation
ams Datasheet
[v1-49] 2015-Nov-23
Page 5
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AS3635 − Electrical Characteristics
Electrical Characteristics
V VBAT = +2.51V to +5.5V, TAMB = -30°C to 85°C, unless otherwise
specified. Typical values are at V VBAT = +3.6V, TAMB = 25°C, unless
otherwise specified.
Figure 6:
Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
2.51(1)
3.6
5.5
V
-30
25
85
°C
0.5
1.0
μA
2.5
V
32.9
V
35.8
V
50
V
1.05
A
General Operating Conditions
VVBAT
Supply Voltage
TAMB
Operating
Temperature
ISHUTDOWN
VUVLO
Shutdown Current
CHARGE = 0, charge pump OFF,
FLASH = 0 TAMB<50°C; VVBAT<3.7V
Undervoltage
Lockout
Measured on pin VBAT
2.3
VFLASH Capacitor Charger
V TRIP
VTRIPRANGE
Comparator trip
voltage
V(SW) - V(VBAT) in circuit adjustable
with OTP. TAMB = 0°C to 50°C;
only if V TRIP is trimmed by ams
31.9
Programming
range of VTRIP
5 bit programming 32.4V
-11.2%/+10.5%; measured on pin
SW allows in-circuit trimming of the
final charged voltage VFLASH on
capacitor CFLASH
29.6
VSW
Maximum voltage
on pin SW
ISW
Switching current
limit
RSW
Switch ON
resistance
0.75
Internal transistor between SW and
PGND
End of charge comparator trigger
time - see Internal Circuit
tEOC_DET
32.4
0.9
Ω
0.4
128
138
148
5.25 > VVBAT > 2.7V
4.75
5.0
5.25
2.7V > VVBAT > 2.51V
4.3
ns
Charge Pump Parameters
VV5V
ICHRG_PUMP
5V Charge pump
output voltage
Charge Pump
Operating Current
Page 6
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V
CHARGE= 0->1->0 (20 seconds
timer running(2)), charge pump ON
includes 48μA for internal biasing
and oscillator
5.25
163
μA
ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Electrical Characteristics
Symbol
fCLK
Parameter
Condition
Min
Operating
frequency
Typ
Max
2.0
Unit
MHz
IGBT Control - See IGBT Driver
IBGTRISE
IGBT control
voltage rise time
IBGTFALL
IGBT control
voltage fall time
RIGBT_ON
IGBT switching ON
resistance
TAMB=-30°C to 85°C
IGBT Sink Current
VIGBT_GATE below 2.3V;
TAMB=-30°C to 85°C
IIGBT_SINK
IIGBT_BOOST
IGBT Boost
Current
0.171
0.214
0.256
μs
0.42
0.525
0.63
μs
AS3635B
30
50
60
Ω
AS3635E
5
15
20
Ω
AS3635B
10
15
20
mA
AS3635E
52
60
70
mA
40
46
53
mA
Pin IGBT_GATE, rise/falltime 10% 90%, V5V=5V, TAMB=25ºC, VIN=3.7V,
AS3635E, load: 6.5nF (capacitor)
VIGBT_GATE above 2.3V;
TAMB=-30°C to 85°C
Digital Interface
VIH
High Level Input
Voltage
1.26
V
Pins CHARGE, FLASH;
pin DONE in trim mode
VIL
Low Level Input
Voltage
VOL
Low Level Output
Voltage
Pin DONE, ILOAD=4mA
ILEAK
Leakage current
Pin DONE
RPD
Pulldown
resistance to
GND(3)
Pins CHARGE, FLASH
0.0
-1
0.54
V
0.2
V
+1
μA
52
kΩ
Recommended Transformer Parameters - see Recommended Transformers
LPRIMARY
LLEAK
N
Primary
Inductance
μH
6
Primary Leakage
Inductance
Turns Ratio
0.4
For VFLASH=320V (final charged
voltage on CFLASH)
μH
10.2
VISOLATION
Isolation Voltage
500
V
ISATURATION
Primary Saturation
Current
0.84
A
RPRIMARY
Primary Winding
Resistance
ams Datasheet
[v1-49] 2015-Nov-23
0.4
Ω
Page 7
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AS3635 − Electrical Characteristics
Symbol
RSECONDAR Y
Parameter
Condition
Min
Typ
Secondary
Winding
Resistance
Max
Unit
60
Ω
Note(s):
1. Minimum V VBAT is set to 2.51V to allow a little margin to maximum VUVLO undervoltage lockout of 2.5V.
2. Setting CHARGE=1 resets the timeout timer. Additionally the timeout timer is automatically stopped at power ON reset and once it
has expired.
3. Measured with VBAT=3.7V, CHARGE or FLASH = 1.26V
Page 8
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Typical Operating Characteristics
Typical Operating
Characteristics
VBAT = 3.6V, TAMB = 25°C (unless otherwise specified).
C FLASH=22μF, TCHARGE Transformer = TTRN-3822,
Q IGBT=RJP4002ANS, I SW=750mA.
Figure 7:
Charging Waveform
IBAT
50mA/
VFLASH
50V/Div
VFLASH drop due to
load of measurement
500ms/Div
Figure 8:
Charging Time vs. VBAT
4.0
3.8
Charging Time (s)
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
2.4
2.8
3.2
3.6
4.0
VBAT (V)
ams Datasheet
[v1-49] 2015-Nov-23
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AS3635 − Typical Operating Characteristics
IBAT
50mA/
VFLASH
50V/Div
Figure 9:
Charging Waveform VBAT=2.51V
500ms/Div
IBAT
50mA/
VFLASH
50V/Div
Figure 10:
Charging Waveform VBAT=4.2V
500ms/Div
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Typical Operating Characteristics
Figure 11:
Efficiency vs. VFLASH
80
70
Efficiency (%)
60
50
Note: Efficiency is mostly defined
by external components used
and transformer TTRN-3822 is
optimized for size
40
30
20
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
10
0
0
50
100
150
200
250
300
350
Voltage on CFLASH (V)
Figure 12:
Efficiency vs. Charging Time
80
70
Efficiency (%)
60
50
40
30
20
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Charging Time (s)
ams Datasheet
[v1-49] 2015-Nov-23
Page 11
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AS3635 − Typical Operating Characteristics
Figure 13:
End Of Charge Voltage vs. VBAT
End of Charge Voltage (V)
328
327
326
Tamb = -25C
Tamb = +85C
Tamb = +25C
325
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
VBAT (V)
IGBT_GATE
1V/Div
Figure 14:
IGBT_GATE Driving Waveform
FLASH
1μs/Div
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Typical Operating Characteristics
Figure 15:
SW Switching Waveform (Transformer: TTRN-3822)
VSW
10V/Div
Transformer:
TTRN-3822
50ns/Div
Figure 16:
SW Switching Waveform (Transformer: TTRN-3825)
VSW
10V/Div
Transformer:
TTRN-3825
50ns/Div
ams Datasheet
[v1-49] 2015-Nov-23
Page 13
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AS3635 − Typical Operating Characteristics
Figure 17:
V5V vs. VBAT (V5V CP ON)
5.2
V5V (V)
5.1
5.0
4.9
IV5V = 10uA
IV5V = no load
4.8
2.5
3.0
3.5
4.0
4.5
Input Voltage (V)
Figure 18:
Battery Current vs. VBAT (V5V CP ON)
Battery Current IBAT (uA)
300
250
200
150
100
50
IV5V = 10uA
IV5V = no load
0
2.5
3.0
3.5
4.0
4.5
Input Voltage (V)
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Detailed Description
The AS3635 is a photoflash capacitor charger and an integrated
IGBT driver for a Xenon flash. The capacitor charger charges
V FLASH to the final charging voltage (e.g. 320V) and the IGBT
driver starts the actual Xenon flash.
Detailed Description
Additionally a charge pump is included to generate a stable 5V
supply for accurate control of the IGBT ON/OFF timings
independent of the battery supply.
The final charged voltage (V FLASH) can be in-field trimmed to
e.g. 320V with the integrated OTP (one time programmable)
memory (see section Trimming Procedure). V FLASH can be
exactly trimmed to the maximum allowed output voltage
resulting in an improved use of the available energy in the
photoflash capacitor.
Note(s): The AS3635 uses a WL-CSP (wafer level chip scale
package) to optimize the PCB area required and minimize the
module size. Therefore the actual DIE is visible (and it is not
molded in plastic as for other packages like QFN or DFN) and
the AS3635 is sensitive to external light. It has to be protected
from direct light from the Xenon tube.
Internal Circuit
Figure 19:
Internal Circuit
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635
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Page 15
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AS3635 Operation
The AS3635 allows charging and refresh cycles under complete
software control. Two typical configurations are shown in
Figure 20 and Figure 21:
Figure 20 shows a configuration without any refresh between
the pre-flash and the actual flash. Typically this is used for
applications where no noise at all should be generated on the
battery when the camera is performing e.g. white color
balancing (between pre-flash and flash cycle).
Figure 20:
AS3635 Charging Cycle Without Recharging Between Pre-Flash and Flash
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Page 16
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Detailed Description
Figure 21 shows a configuration with continuous refresh of the
voltage on the photoflash capacitor (V FLASH). Typically this is
used in application where the maximum flash energy should be
used.
Figure 21:
AS3635 Charging Cycle With Continuous Recharging
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ams Datasheet
[v1-49] 2015-Nov-23
Page 17
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AS3635 − Detailed Description
A typical charging cycle and its voltages and current on the
different pins and signals are shown in Figure 22:
Figure 22:
AS3635 Charging Cycle Details
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The input CHARGE is set to high and charging begins (1).
During a single cycle, the internal NMOS transistor connects the
pin SW to PGND (2). Therefore the current I SW rises (3) until it
reaches I SW current limit (4). Then the energy is transferred to
the secondary side of the transformer and the voltage V CFLASH
on the flash capacitor C FLASH rises (5).
The output voltage VCFLASH gradually increases and once it hits
the end of charge detection threshold (6) (detected on V SW
during the OFF time of the NMOS transistor between SW and
PGND) 8 times (7) 1, DONE is pulled low (8). When CHARGE is set
to low afterwards (9), DONE returns to high (10) finishing a full
charging cycle.
Note(s): For simplicity the number of actual charging cycles
(NMOS SW ON/OFF) are reduced in Figure 22.
1. The 8 cycles required for actual detection of the end of charge conditions are not shown in Figure 22.
Page 18
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ams Datasheet
[v1-49] 2015-Nov-23
Trimming Procedure
The final charging voltage on V FLASH can be trimmed in-circuit
to cancel inaccuracies of V FLASH due to the transformer and
diode. The trimming procedure is performed as follows:
Figure 23:
AS3635 Trimming Circuit(1)
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Note(s):
1. The internal voltages (e.g. +3.4V/-2.8V/32.4V) are internally scaled to fit in the supply voltage range
1. The production test equipment starts a charging cycle
(CHARGE=1) and waits until DONE=0
2. The voltage on VFLASH is measured and a correction code
is calculated
3. The trimmode control is unlocked using a special
sequence
4. The one time programmable memory (OTP) is
programmed with the above calculated code
5. The trimmode control can be disabled by fusing the OTP
bit trimm_lock
See ams application note ‘AN3635_In-Production_Trimming’ 2
for a detailed description of the trimming setup and the
trimming procedure.
2. Please contact ams for more information.
ams Datasheet
[v1-49] 2015-Nov-23
Page 19
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AS3635 − Detailed Description
IGBT Driver
The internal circuit of the IGBT driver is shown in Figure 24:
Figure 24:
IGBT Driver Circuit
AS3635
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The IGBT driver is enable once the charge pump is switched ON
and the voltage on pin V5V has reached 4V (to guarantee at
least 4V driving signal for the IGBT).
The IGBT driver includes all required resistors and pulldowns to
operate the IGBT without any external circuitry 3. Do not add
any external pulldown resistor on pin IGBT_GATE.
3. Exception: If the Sanyo IGBT TIG058E8 is used, add a series resistor of 50Ω for the gate drive. For Renesas RJP4006AGE add a series
resistor of 68Ω.
Page 20
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Detailed Description
ESD Protection Diodes
The internal ESD diodes are shown in Figure 25 - do not operate
ESD diodes in forward direction 4:
Figure 25:
ESD Diodes
AS3635
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4. Exception: The diode between SW and PGND is designed to be operated in forward direction for very short pulses during charging.
ams Datasheet
[v1-49] 2015-Nov-23
Page 21
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AS3635 − Application Information
Application Information
External Components
Transformers T CHARGE and T TRIG
Following transformers are recommend for the AS3635 (due to
the OTP programming features see section Trimming
Procedure, the output voltage V FLASH can be programmed):
Figure 26:
Recommended Transformers
Component
TCHARGE
Part Number
N
L
Size (mm)
Manufacturer
C3-T2.5R
10.2
6.7μH
3.4×3.4×2.5
Mitsumi Electric
www.mitsumi.co.jp
TTRN-3825H
10.2
7μH
3.8×3.8×2.5
TTRN-3822H
10.2
7μH
3.8×3.8×2.2
TTRN-5820H
10.2
8.87μH
5.8×5.8×2.0
TTRN-0520H
10.41
8.35μH
5.0×5.0×2.0
LDT4520T-01
10.2
10μH
4.7×4.5×2.0
7μH
3.2×2.5×1.55
(H is max)
ATB322515
T TRIG
10.2
BO-02
7.3×2.5(3.5)×2.2
Tokyo Coil
www.tokyocoil.com
TDK
www.tdk.com
Tokyo Coil
www.tokyocoil.com
Always ensure that the voltage on pin SW does not exceed the
AS3635 maximum Vsw specification during charging.
(see Figure 6)
IGBT
As the AS3635 has an internal charge pump included, 2.5V, 2.7V
and 4V IGBT can be used without limit on the supply V VBAT. The
IGBT is used for two purposes:
1. Powering of the Xenon tube and generating together
with the oscillation circuit consisting of T TRIG, CTRIG,
RTRIG a sufficiently high trigger pulse to ignite the
Xenon tube (about 3.5kV) - this is accomplished by a fast
rising edge of the gate of the IGBT
2. Switching OFF the current through the Xenon tube at
the end of the flash pulse to accurately control the light
emitted by the flash. To protect the IGBT the switching
OFF falling edge voltage should be less than 400V/μs
(measured on the emitter of the IGBT)
Page 22
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Application Information
Both requirements are achieved with the internal driving circuit
of the AS3635. Internal OTP trimming allows to adopt to
different trigger coils and IGBTs.
Figure 27:
Recommended IGBTs
Component
Part Number
Min. Drive
Voltage
RJP4002ANS
2.5V
RJP4003ANS
4.0V
RJP4006AGE(1)
2.7V
2.85×3.05×1.1
mm (H is max.)
GT8G133
4.0V
TSSOP-8
3.3 × 6.4mm
Toshiba
www.semicon.toshiba.co.jp
TIG058E8(2)
4.0V
ECH8
2.8 × 2.9mm
Sanyo
www.sanyo.com
QIGBT
Size
Manufacturer
VSON-8
3 × 4.8mm
Renesas
www.renesas.com
Note(s):
1. Add a series resistor of 68Ω in the gate drive.
2. Add a series resistor of 47Ω in the gate drive.
Photoflash Capacitor C FLASH
The photoflash capacitor stores the energy for the flash. Its
capacitance define the maximum available energy. Using
higher value capacitors as shown in figure below is possible,
but will increase the charging time.
It is recommended to use low ESR capacitors to avoid loosing
power during flash (it is also possible to connect two capacitors
in parallel to reduce ESR):
Figure 28:
Recommended Photoflash Capacitors
Component
Part Number
Capacitor
Voltage
Rating
Size
Manufacturer
CFLASH
330FW13A6.3X20
2x13.5μF(1)
330V
Cylinder
2 × l=24mm,
d=7mm
Rubycon
www.rubycon.co.jp
Note(s):
1. Different capacitor values are possible to be used together with the AS3635. Lower capacitor value will reduce charging time, lower
ESR capacitor will improve light output energy and reduce losses in the capacitor during the flash pulse.
ams Datasheet
[v1-49] 2015-Nov-23
Page 23
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AS3635 − Application Information
Photoflash Charger Rectification Diode D CHARGE
The rectification diode should have very low parasitic
capacitance 5 and has to withstand the operating current and
reverse voltages.
Figure 29:
Recommended Rectification Diodes
Component
DCHARGE
Part Number
Parasitic
Capacitor
Voltage
Rating
Size
FVO2R80
5pF
800V
1.25×2.5mm
Origin
www.origin.co.jp
GSD2004S
5pF / 2
2× 240V
SOT-23
2.4×3.0mm
Vishay
www.vishay.com
BAS21
5pF / 2
2× 250V
SC-70
2.0×2.1mm
OnSemi
www.onsemi.com
Manufacturer
Supply Capacitor C VBAT and Charge Pump Capacitor
C V5V
Low ESR capacitors should be used to minimize VBAT ripple.
Multi-layer ceramic capacitors are recommended since they
have extremely low ESR and are available in small footprints.
The capacitor should be located as close to the device as
possible.
X5R dielectric material is recommended due to their ability to
maintain capacitance over wide voltage and temperature
range.
Figure 30:
Recommended C VBAT and C V5V Capacitor
Component
CV5V
CVBAT
Part Number
C
TC
Code
Rated
Voltage
Size
GRM155R60J474
470nF
X5R
6.3V
0402
GRM155R60J105
GRM155R61A105
1μF
X5R
6.3V
10V
0402
GRM188R60J475
4.7μF
X5R
6.3V
0603
Manufacturer
Murata
www.murata.com
If a different output capacitor is chosen, ensure low ESR values
and voltage ratings.
5. A low parasitic capacitance improves charging efficiency.
Page 24
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Application Information
PCB Layout Guideline
Following layout recommendations apply:
1. Keep the path (and area) of GND - C VBAT - VBAT T CHARGE(primary) - SW - GND as short as possible to
minimize the leakage inductance of TCHARGE and ensure
a proper supply connection for the AS3635
2. Place CVBAT as close as possible to the AS3635.
3. Ensure wide and short PCB paths for the path GND C FLASH - X FLASH - QIGBT - GND to allow 150A to flow during
the flash pulse. Connect this GND only at a single place
to the main GND plane.
4. The IGBT has two ground connections: One ground for
the driving input and one ground for the power path.
5. Ensure larger spacings for all high voltage paths; check
with the PCB manufacturer to ensure proper minimum
spacing for 320V paths and 4kV (Xenon tube trigger pin)
paths.
6. Minimize the parasitic capacitance of the PCB on the
anode of D CHARGE especially to GND and VFLASH
7. See ams “WLP-CSP-Handling-Guidelines_1V0.pdf” 6 for
proper handling, PCB layout and soldering of the
WL-CSP AS3635 device.
See ams demoboard layout (described in application note
‘AN3635’ 6).
6. Please contact ams for more information.
ams Datasheet
[v1-49] 2015-Nov-23
Page 25
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AS3635 − Package Drawings & Mark ings
Package Drawings & Markings
Figure 31:
9 Pin WL-CSP 1.5 × 1.5mm Marking
3635
<Code>
Line 1: ams logo
Line 2: 3635 and version code (e.g. ‘A’ or ‘B’)
Line 3: <Code>
Tracecode (4 characters)
Figure 32:
9 Pin WL-CSP 1.5 × 1.5mm Package Dimensions
#$%
&$'
"
(
)
)
)"
"
)
)
"
%
%
)"
RoHS
Page 26
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%"
%"
""
%
!
%
"
Green
ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Ordering & Contact Information
Ordering & Contact Information
The devices are available as the standard products shown in
Figure 33.
Figure 33:
Ordering Information
Ordering
Code
AS3635BZWLT
AS3635EZWLT
Marking
Description
Package
Delivery
Form
Delivery
Quantity
3635B
Xenon Flash Driver (5V IGBT Control)
ISW (charging current peak) = 900mA
RIGBT_ON = 50Ω
IIGBT_SINK = 15mA
IIGBT_BOOST = 46mA
V TRIP trimmed by customer
9-pin WL-CSP
(1.5mm × 1.5mm)
Tape &
Reel
6500
3635E
Xenon Flash Driver (5V IGBT Control)
ISW (charging current peak) = 900mA
RIGBT_ON = 15Ω
IIGBT_SINK = 60mA
IIGBT_BOOST = 46mA
V TRIP trimmed by customer
9-pin WL-CSP
(1.5mm × 1.5mm)
Tape &
Reel
6500
Description: AS3635V-ZWLT
V ... AS3635 version, either B or E
Z ... Temperature range -30°C to 85°C
WL ... Wafer Level Chip Scale Package (WL-CSP)
T ... Delivery form Tape & Reel
Buy our products or get free samples online at:
www.ams.com/ICdirect
Technical Support is available at:
www.ams.com/Technical-Support
Provide feedback about this document at:
www.ams.com/Document-Feedback
For further information and requests, e-mail us at:
[email protected]
For sales offices, distributors and representatives, please visit:
www.ams.com/contact
Headquarters
ams AG
Tobelbaderstrasse 30
8141 Unterpremstaetten
Austria, Europe
Tel: +43 (0) 3136 500 0
Website: www.ams.com
ams Datasheet
[v1-49] 2015-Nov-23
Page 27
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AS3635 − RoHS Compliant & ams Green Statement
RoHS Compliant & ams Green
Statement
RoHS: The term RoHS compliant means that ams AG products
fully comply with current RoHS directives. Our semiconductor
products do not contain any chemicals for all 6 substance
categories, including the requirement that lead not exceed
0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, RoHS compliant products are
suitable for use in specified lead-free processes.
ams Green (RoHS compliant and no Sb/Br): ams Green
defines that in addition to RoHS compliance, our products are
free of Bromine (Br) and Antimony (Sb) based flame retardants
(Br or Sb do not exceed 0.1% by weight in homogeneous
material).
Important Information: The information provided in this
statement represents ams AG knowledge and belief as of the
date that it is provided. ams AG bases its knowledge and belief
on information provided by third parties, and makes no
representation or warranty as to the accuracy of such
information. Efforts are underway to better integrate
information from third parties. ams AG has taken and continues
to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or
chemical analysis on incoming materials and chemicals. ams AG
and ams AG suppliers consider certain information to be
proprietary, and thus CAS numbers and other limited
information may not be available for release.
Page 28
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ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Copyrights & Disclaimer
Copyrights & Disclaimer
Copyright ams AG, Tobelbader Strasse 30, 8141
Unterpremstaetten, Austria-Europe. Trademarks Registered. All
rights reserved. The material herein may not be reproduced,
adapted, merged, translated, stored, or used without the prior
written consent of the copyright owner.
Devices sold by ams AG are covered by the warranty and patent
indemnification provisions appearing in its General Terms of
Trade. ams AG makes no warranty, express, statutory, implied,
or by description regarding the information set forth herein.
ams AG reserves the right to change specifications and prices
at any time and without notice. Therefore, prior to designing
this product into a system, it is necessary to check with ams AG
for current information. This product is intended for use in
commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or
high reliability applications, such as military, medical
life-support or life-sustaining equipment are specifically not
recommended without additional processing by ams AG for
each application. This product is provided by ams AG “AS IS”
and any express or implied warranties, including, but not
limited to the implied warranties of merchantability and fitness
for a particular purpose are disclaimed.
ams AG shall not be liable to recipient or any third party for any
damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interruption of business or
indirect, special, incidental or consequential damages, of any
kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation
or liability to recipient or any third party shall arise or flow out
of ams AG rendering of technical or other services.
ams Datasheet
[v1-49] 2015-Nov-23
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AS3635 − Document Status
Document Status
Document Status
Product Preview
Preliminary Datasheet
Datasheet
Datasheet (discontinued)
Page 30
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Product Status
Definition
Pre-Development
Information in this datasheet is based on product ideas in
the planning phase of development. All specifications are
design goals without any warranty and are subject to
change without notice
Pre-Production
Information in this datasheet is based on products in the
design, validation or qualification phase of development.
The performance and parameters shown in this document
are preliminary without any warranty and are subject to
change without notice
Production
Information in this datasheet is based on products in
ramp-up to full production or full production which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade
Discontinued
Information in this datasheet is based on products which
conform to specifications in accordance with the terms of
ams AG standard warranty as given in the General Terms of
Trade, but these products have been superseded and
should not be used for new designs
ams Datasheet
[v1-49] 2015-Nov-23
AS3635 − Revision Information
Revision Information
Changes from 1.4-8 to current revision 1-49 (2015-Nov-23)
Page
Content of austriamicrosystems datasheet was converted to latest ams design
Updated Figure 1
1
Updated Figure 33 and text below
27
Note(s):
1. Page and figure numbers for the previous version may differ from page and figure numbers in the current revision.
2. Correction of typographical errors is not explicitly mentioned.
ams Datasheet
[v1-49] 2015-Nov-23
Page 31
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AS3635 − Content Guide
Content Guide
Page 32
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1
2
3
General Description
Key Benefits & Features
Applications
4
5
7
10
Pinout
Absolute Maximum Ratings
Electrical Characteristics
Typical Operating Characteristics
16
16
17
20
21
22
Detailed Description
Internal Circuit
AS3635 Operation
Trimming Procedure
IGBT Driver
ESD Protection Diodes
23
23
23
23
24
25
25
26
Application Information
External Components
Transformers TCHARGE and TTRIG
IGBT
Photoflash Capacitor CFLASH
Photoflash Charger Rectification Diode DCHARGE
Supply Capacitor CVBAT and Charge Pump Capacitor
CV5V
PCB Layout Guideline
27
28
30
31
32
33
Package Drawings & Markings
Ordering & Contact Information
RoHS Compliant & ams Green Statement
Copyrights & Disclaimer
Document Status
Revision Information
ams Datasheet
[v1-49] 2015-Nov-23