TI TPS65573DSSR

TPS65573
www.ti.com................................................................................................................................................................................................... SLVS868 – MARCH 2009
INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER
FEATURES
1
• Wide Input Voltage
– VBAT = 1.4 V to 12 V
– VCC = 2.5 V to 5.5 V
• Integrated 50-V Power Switch With Lower RON
• Programmable Peak Current at Primary Side
From 0.5 A to 1.5 A
• Optimized Switch ON/OFF Control for Fast
Charging
• Charge Complete Detection at Primary Side
With High Accuracy
• Integrated IGBT Driver
• 2-mm × 3-mm, 12-Pin WSON Package
• Protection
– Overcurrent Protection (OCP)
– Thermal Shutdown (TSD)
2
APPLICATIONS
•
•
•
•
Digital Still Cameras
Optical Film Cameras
Digital Video Camcorders
Cell Phones
DESCRIPTION/ORDERING INFORMATION
The TPS65573 offers a complete solution for a
charging photo flash capacitor and flashing xenon
tube with insulated gate bipolar transfer (IGBT) driver.
This device has an integrated voltage reference,
power (SW), comparators for peak current
detection/power
SW
turnon
detection/charge
complete detection, IGBT driver and control logics for
charging applications/driving IGBT applications.
Compared with discrete solutions, this device reduces
the component count, shrinks the total solution size,
and erases the difficulty of design for xenon tube
application.
Additional advantages are a fast charging time and
high efficiency since this device has an optimized
pulse width modulation (PWM) control algorithm for
photo flash charging. Also this device has high
accuracy for peak current detection and for charge
completion detection. The distribution of charging
time is smaller.
Other provisions of the device include sensing the
output voltage at the primary side, programmable
peak current at the primary side, protection features
(thermal shutdown and overcurrent), an output pin for
charge completion detection, input pins for charge
enable, flash acceptable, and flash on.
Figure 1. Application Circuit
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS65573
SLVS868 – MARCH 2009................................................................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PACKAGE (1) (2)
TA
–35°C to 85°C
(1)
(2)
ORDERABLE PART NUMBER
TPS65573DSST
WSON
TPS65573DSSR
TOP-SIDE MARKING
TRANSPORT
MEDIA, QUANTITY
Tape and Reel, 250
CVR
Tape and Reel, 3000
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
UNIT
Supply voltage range
VCC
–0.6 to 6
VBAT
–0.6 to 13
VSW
Switch terminal voltage range
ISW
Switch current between SW and GND
VI
Input voltage range
Tstg
Storage temperature range
TJ
Maximum junction temperature
(1)
CHG, I_PEAK, and F_ON
V
–0.6 to 50
V
2
A
–0.3 to VCC
V
–40 to 150
°C
125
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
MIN MAX
Supply voltage
VCC
2.5
5.5
VBAT
1.4
12
VSW
Switch terminal voltage
ISW
Switch current between SW and GND
–0.3
Operating free-air temperature
–35
VIH
High-level digital input voltage at CHG and F_ON
1.5
VIL
Low-level digital input voltage at CHG and F_ON
UNIT
45
V
V
1.5
A
85
°C
V
0.5
V
DISSIPATION RATINGS
(1)
2
PACKAGE
RθJA (1)
POWER RATINGS
TA < 25°C
POWER RATINGS RATE
TA = 85°C
DFN
54.5°C/W
1.84 W
0.74 W
The thermal resistance, RθJA, is based on a soldered PowerPAD™ package on a 2S2P JEDEC board using thermal vias.
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ELECTRICAL CHARACTERISTICS
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
140
200
µA
2
3
mA
ICC1
Supply current from VBAT
V(CHG) = VCC, V(F_ON) = GND,
V(F_EN)= GND,
XFULL = Hi-Z
ICC2
Supply current from VCC
V(CHG) = VCC, V(F_ON) = GND,
V(F_EN) = GND,
XFULL = Hi-Z
ICC3
Supply current from VCC and VBAT
V(CHG) = GND, V(F_ON) = GND,
V(F_EN) = GND
1
µA
ILKG1_SW
Leakage current at SW
V(SW) = 4.2 V
2
µA
ILKG2_SW
Leakage current at SW
V(SW) = 45 V
600
µA
Isink
Sink current at I_PEAK
VCC = V(I_PEAK) = 3 V
0.1
µA
IPEAK1
Lower point of Peak current detection
V(I_PEAK )= 0.1V
0.38
0.58
0.78
A
IPEAK2
Middle point of Peak current detection
V(I_PEAK) = 0.65 V
0.84
1.04
1.24
A
IPEAK3
Upper point of Peak current detection
V(I_PEAK) = 1.5 V
1.30
1.50
1.70
RON_XFULL
ON resistance between XFULL and GND
I(XFULL) = 1 mA
1.5
3
kΩ
RON_SW
ON resistance between SW and GND
I(SW) = 1 A, VCC = 3 V
0.4
0.7
Ω
RG_IGBT_N
G_IGBT_N ON resistance
V(G_IGBT_N) = GND
3
5
7.5
Ω
RG_IGBT_P
G_IGBT_P ON resistance
V(G_IGBT_P) = 3 V
3
5
7.5
Ω
RINPD
Pulldown resistance of CHG, F_ON and
F_EN
V(CHG), V(F_ON), V(F_EN) = VCC
TSD (1)
Thermal shutdown detection temperature
100
140
150
A
kΩ
160
°C
V
VFULL
Charge completion detection voltage at SW
VBAT + VBAT + VBAT +
28.6
29.0
29.4
VZERO
Zero current detection at SW
VBAT + VBAT + VBAT +
10m
25m
40m
V
VOCP
Over current protection trigger voltage at
SW
VBAT – VBAT – VBAT –
150m
100m
50m
V
(1)
Specified by design
SWITCHING CHARACTERISTICS
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, VSW = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
G_IGBT turns high/low after F_ON turns high/low
tPD (1)
Propagation delay
TYP
MAX
UNIT
25
SW OFF after ISW exceeds the threshold defined by I_PEAK
150
XFULL turns Low after VSW exceeds VFULL
200
SW ON after CHG turns high
(1)
MIN
50
ns
150
µs
Specified by design
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TPS65573
SLVS868 – MARCH 2009................................................................................................................................................................................................... www.ti.com
PIN ASSIGNMENT
(BOTTOM VIEW)
TERMINAL FUNCTIONS
TERMINAL
4
I/O
DESCRIPTION
F_EN
I
Flash Acceptable input. High level is acceptable to Xenon Flash on with F_ON pin. Low level is to
force Disable of Xenon Flash on in spite of F_ON being High.
2
F_ON
I
Flash enable/disable. High level is xenon flash on with F_EN being high. Low level is xenon flash
off even if F_EN is high.
3
CHG
I
Charge enable/disable input. Drive CHG high to start charging the output capacitor. Drive CHG
low to terminate charging.
4
I_PEAK
I
Primary-side peak current control input. The voltage at I_PEAK sets the peak current into SW. See
the Programming Peak Current section for details on selecting VI_PEAK.
5
VBAT
I
Battery voltage monitor input for detecting OFF timing of power MOSFET. Connect VBAT pin to an
input voltage from battery. The arrowable range is from 1.4 V to 12 V. Bypass VBAT to GND with
a 10 µF ceramic capacitor as close to the IC as possible.
6
SW
O
Primary-side power MOSFET switch. Connect SW to the switched side of the transformer.
7
GND
–
Ground for power and IC internal cicruits. Connect to the ground plane.
8
TEST_GND
–
Used by TI, should be connected to GND and ground plane
9
G_IGBT_N
O
IGBT gate driver output for turning off G_IGBT swings from VCC to GND to drive external IGBT
devices. The external resistor should be needed at outside. The value depends on the
characteristics of IGBT.
10
G_IGBT_P
O
IGBT gate driver output for turning on G_IGBT swings from GND to VCC to drive external IGBT
devices. The external resistor should be needed at outside. The value depends on the
characteristics of IGBT.
11
VCC
I
Power supply. VCC is the gate drive supply and IC supply. The allowable range is from 2.7 V to
5.5 V. Bypass VCC to GND with a 1-µF ceramic capacitor as close to the IC as possible.
12
XFULL
O
Charge completion indicator output. XFULL is an open-drain output that pulls low once the output
is fully charged. XFULL is high impedance during charging and all fault conditions. The recovery
condition from Low to High is to turn Low at CHG pin only.
NO.
NAME
1
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www.ti.com................................................................................................................................................................................................... SLVS868 – MARCH 2009
Figure 2. Block Diagram
CHG, F_ON, F_EN
SW
I_PEAK
XFULL
VBAT
G_IGBT_P, G_IGBT_N
Figure 3. I/O Equivalent Circuit
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TPS65573
SLVS868 – MARCH 2009................................................................................................................................................................................................... www.ti.com
PRINCIPLES OF OPERATION
Figure 4. Charging Sequence Chart
Start/Stop Charging
The TPS65573 has an enable/disable pin for charging (CHG). The only way to start charging is to input a
high-level signal into CHG (see A and C in Figure 2). This high level is latched by internal D-FF shown in
Figure 2. The internal enable (ENA) signal goes up with some delay, which is specified as SW ON after CHG↑ in
Switching Characteristics. This is to avoid the wrong operation with a pulsed noise at CHG.
To stop charging, there are three trigger events:
• Forced stop by inputting a low level at CHG (see B in Figure 4)
• Automatic stop by detecting a full charge. VOUT reaches the target value (see D in Figure 4).
• Protected stop by detecting an overcurrent protection (OCP) on the SW pin
When the host inputs the high-level signal into CHG, the voltage of VCC and VBAT must meet the recommended
range; VBAT is from 1.4 V to12 V, VCC is from 2.5 V to 5.5 V. It is acceptable to start recharging after a forced
stop controlled by CHG (see C in Figure 4).
Charging Status Indication
When the charging operation is complete, the TPS65573 drives the charge completion indicator pin, XFULL, to a
low level. A controller can detect the status of the device as a logic signal when it is connected through a pullup
resistor (R1) (see Figure 1). The only way to reset the indication at XFULL is to input a low level into CHG (see
Figure 4).
The XFULL output enables the controller to find the device-protected situation. If overcurrent protection (OCP)
occurs, XFULL never goes to a low level when CHG is at a high level. Therefore, the controller detects OCP by
measuring the time from turning CHG to a high level to turning XFULL to a low level. If the duration is longer than
the maximum designed charge time, OCP occurs.
6
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Charging Control
Figure 5 shows a timing diagram at beginning/ending. The TPS65573 provides three comparators to control the
charging operation. U1 is the VFULL comparator to detect the charge completion, U2 is the VZERO comparator to
detect the turn-on time of the power SW, and U3 is the IPEAK comparator to detect the turn-off time of the power
SW.
Figure 5. Beginning/Ending Timing
While the power SW is ON, the IPEAK comparator (U3) monitors current flow through the power SW from SW to
GND. When the current at SW (ISW) exceeds the threshold defined by the voltage of the I_PEAK pin (IPEAK), the
power SW turns OFF.
After the power SW turns OFF, the spike voltage occurs immediately because of leakage inductance at the
primary side. It might cause the power SW to break. To avoid this, the leakage inductance should be reduced as
much as possible.
When the power SW is OFF, the magnetic energy in the transformer starts discharging from the primary side to
the secondary side. During this discharge, the VZERO comparator (U2) monitors the kickback voltage at the
primary side to compare it with the VBAT voltage. The kickback voltage increases rapidly until the diode placed
at secondary side turns ON. The diode turns ON when the voltage of secondary side of the transformer reaches
more than the voltage of the output capacitor. After the diode turns ON, the kickback voltage is almost stable
until the magnetic energy at the primary side discharges completely.
After the discharge stops, the small amount of energy left in the transformer is released via parasitic paths, and
the kickback voltage reaches almost zero voltage. During this period, U2 makes the power SW turn ON when
(VSW – VBAT) drops from VZERO.
The VFULL comparator (U1) also monitors the kickback voltage. When VSW – VBAT exceeds VFULL, the TPS65573
stops the charging operation. After detection, XFULL goes to low level to indicate charge completion. After
charge completion, the TPS65573 immediately goes into disable mode with the internal ENA automatically
turning to a low level. The purpose is to save the consumption power.
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TPS65573
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In Figure 5, ON time is almost the same period in every switch cycle. But the current at SW always starts from
negative value because of the Trr of the diode. Because of this, ON time depends on Trr. ON time is calculated
by Equation 1.
I PEAK
TON ( n ) = Lp
+ Trr (n)
VBAT
(1)
Where:
TON(n) =
ON time at n cycle switching
Lp =
Inductance of primary side
IPEAK =
Peak current at primary side
VBAT =
Battery voltage
Trr(n) =
Reverse recovery time at n cycle switching
OFF time is dependant on output voltage. As the output voltage gets higher, OFF time gets shorter (see
Equation 2).
TOFF(n) = N ´ L
I PEAK
VOUT(n )
(2)
Where:
TOFF(n) =
OFF time at n cycle switching
N=
Turn ration of transformer
VOUT(n) =
Output voltage at n cycle switching
Programming Peak Current
The TPS65573 provides a method to program the peak primary current with a voltage applied to the I_PEAK pin.
Figure 6 shows how to program IPEAK.
Figure 6 shows the relationship between I_PEAK pin voltage and a peak current at the primary side. This
function has the analog slope controlled by I_PEAK. The maximum voltage to control peak current at the primary
side is around 1.2 V.
Figure 6. I_PEAK Pin Voltage vs Peak Current at Primary Side
8
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Typical usages of this function are:
• Setting the peak charging currents based on the battery voltage. The easiest way is to connect a resistive
divider with battery voltage. This saves battery life.
• Reducing peak current at the primary side when the system powers a zoom-lens motor. This avoids
inadvertent shutdowns due to a large current from the battery.
In Figure 1, three optional connections to I_PEAK are shown:
1. Use the controller to input PWM signal with RC filter.
2. Use a digital-to-analog converter (DAC).
3. Use a resistive divider to input a fixed value into I_PEAK.
Methods 1 and 2 make it possible to delicately control peak current at the primary side. For example, set higher
current during initial charging, but set lower current just before complete charging. This effectively saves the
battery life.
IGBT Driver Control
The TPS65573 integrates an IGBT driver for flashing the xenon tube. After charge completion, the xenon tube
allows turnon with the IGBT driver. If the earlier flashing is needed before charge completion, the confirmation of
the lowest allowable flashing voltage to apply to the xenon tube is required.
G_IGBT should be connected to the gate of IGBT as close as possible to avoid the misoperation of flashing or
breaking the gate of IGBT. The output voltage of G_IGBT voltage depends on IGBT_VCC. The rise time and fall
time of G_IGBT are almost the same because the TPS65573 does not include a pullup/pulldown resistor for the
IGBT driver. The rise time and fall time should be met with the value specified in the data sheet of the IGBT to
avoid breaking the IGBT.
The IGBT drive hasone logic input, named F_ON. To turn on the xenon tube, high-level signal should be inputted
into both F_ON.
Protection
The TPS65573 provides two protection mechanisms; thermal shutdown and overcurrent protection.
Thermal Shutdown (TSD)
Once the TPS65573 die temperature reaches a specific temperature, the operation is immediately latched off. To
recover the operation, the TPS65573 die temperature should be lower than a specific temperature and forced to
a low level at CHG if protection is needed.
Overcurrent Protection (OCP)
The TPS65573 has OCP at the SW pin. The TPS65573 is latched off if the SW pin is dropped to compare VBAT
pin voltage during the switch ON time. The threshold is specified in Overcurrent Protection Trigger Voltage at SW
in Electrical Characteristics. To recover the operation, the CHG level is forced to a low level after protection
occurs and peak current is less than threshold.
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Apr-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS65573DSSR
ACTIVE
SON
DSS
12
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS65573DSST
ACTIVE
SON
DSS
12
250
CU NIPDAU
Level-2-260C-1 YEAR
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Apr-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS65573DSSR
SON
DSS
12
3000
330.0
12.4
2.3
3.3
0.85
4.0
12.0
Q1
TPS65573DSST
SON
DSS
12
250
180.0
12.4
2.3
3.3
0.85
4.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Apr-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS65573DSSR
SON
DSS
12
3000
346.0
346.0
29.0
TPS65573DSST
SON
DSS
12
250
190.5
212.7
31.8
Pack Materials-Page 2
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