AOS Semiconductor Product Reliability Report AON5810/L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AON5810/L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON5810/L passes AOS quality and reliability requirements. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON5810/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. -RoHS Compliant -AON5810L is Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AON5810/L Standard sub-micron Common-Drain Dual N-Channel MOSFET Package Type DFN 2x5 Lead Frame Cu Die Attach Ag epoxy Bonding Wire Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process III. Result of Reliability Stress for AON5810/L Test Item Test Condition Time Point Lot Attribution Total Sample size Number of Failures MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c HTGB - 12 lots 2464pcs 0 JESD22A113 Temp = 150 c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 770pcs 0 4 lots 6 lots JESD22A108 Temp = 150 c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 770pcs 0 JESD22A108 130 +/- 2c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121c, 29.7psi, RH=100% 96 hrs (Note A*) 10 lots 77pcs / lot 770pcs 0 JESD22A110 96 hrs (Note A*) 10 lots 77pcs / lot 770pcs 0 JESD22A102 -65c to 150c, air to air 250 / 500 cycles (Note A*) 12 lots 77pcs / lot 924pcs 0 JESD22A104 (Note A*) 77pcs / lot (Note A*) HTRB HAST Pressure Pot Temperature Cycle Standard 4 lots 6 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 2.86 MTTF = 39893 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON5810/L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (8x77x500+ 12x77x1000) x259] = 2.86 9 8 MTTF = 10 / FIT = 3.49 x 10 hrs = 39893 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 259 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K