AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 16A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 6.2mΩ RDS(ON) (at VGS = 4.5V) < 9.6mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • DC/DC Converters D1 DFN5X6 EP2 D2 Top View S1 1 8 G1 S2 2 7 3 6 D1 D1 D2 G2 4 5 D2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current ±20 V A 64 16 IDSM TA=70°C Units V 16 IDM TA=25°CG Maximum 30 16 ID TC=100°C S2 A 14 Avalanche Current C IAS 35 A Avalanche energy L=0.05mH C EAS 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev1.0: December 2014 2.8 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.8 TJ, TSTG Symbol t ≤ 10s W 8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 21 -55 to 150 Typ 35 65 5 °C Max 45 80 6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=16A µA 5 1.2 0.8 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ ±10 µA 1.8 2.2 V 5 6.2 6.8 8.4 7.5 9.6 mΩ 1 V 16 A 62 0.7 mΩ S 1540 pF 485 pF 448 pF 1.7 2.6 Ω 33.4 45 nC 19.7 27 nC 3.3 nC Gate Drain Charge 15.0 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8.3 ns 24 ns tf Turn-Off Fall Time 10 ns trr Body Diode Reverse Recovery Time Qrr IF=16A, dI/dt=500A/µs 15.2 Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs 22.2 ns nC VGS=10V, VDS=15V, RL=0.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1.0: December 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 3.5V VDS=5V 4.5V 20 20 3V ID(A) ID (A) 10V 125°C 10 10 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 10 3 4 5 Normalized On-Resistance 1.6 8 VGS=4.5V 6 4 VGS=10V 2 VGS=10V ID=16A 1.4 17 5 VGS=4.5V 2 ID=15A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 11 ID=16A 1.0E+01 9.5 40 1.0E+00 125°C IS (A) 8 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ) 1 6.5 125°C 1.0E-01 1.0E-02 5 25°C 1.0E-03 25°C 3.5 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1.0: December 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=16A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 35 0 RDS(ON) limited 15 20 25 30 100µs 1ms DC 10ms 100ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 ID (Amps) 10 200 1000.0 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 17 5 2 10 120 80 40 10 100 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=6°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1.0: December 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 Current rating ID(A) Power Dissipation (W) 25 15 10 15 10 5 0 0 25 50 75 100 125 5 0 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=80°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev1.0: December 2014 www.aosmd.com Page 5 of 6 XXX Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev1.0: December 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6