Datasheet

AOI530
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
70A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 2.7mΩ
RDS(ON) (at VGS=4.5V)
< 4.2mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
TO-251A
IPAK
D
Top View
Bottom View
D
G
S
G
G
D
S
S
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
A
280
23
IDSM
TA=70°C
±20
55
IDM
TA=25°C
Continuous Drain
Current
Units
V
70
ID
TC=100°C
Maximum
30
A
19
IAS
42
A
Avalanche energy L=0.1mH C
EAS
88
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: September 2013
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
41
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
°C
-55 to 175
Typ
15
40
1.5
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Max
20
50
1.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOI530
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
V
2.7
VGS=4.5V, ID=20A
3.3
4.2
mΩ
80
1
V
70
A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
0.68
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
nA
2.2
3.9
VDS=5V, ID=20A
Reverse Transfer Capacitance
±100
2.2
Forward Transconductance
Rg
1.8
3.2
TJ=125°C
gFS
Crss
µA
5
1.4
Units
V
1
VGS=10V, ID=20A
Output Capacitance
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
VGS=0V, VDS=15V, f=1MHz
mΩ
S
3130
pF
1330
pF
225
pF
1.9
2.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
45
62
nC
Qg(4.5V) Total Gate Charge
21.5
30
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
f=1MHz
VGS=10V, VDS=15V, ID=20A
0.9
nC
7
nC
Gate Drain Charge
9.6
nC
Turn-On DelayTime
11
ns
18
ns
45
ns
VGS=10V, VDS=15V, RL=0.75Ω,
Ω
RGEN=3Ω
tf
Turn-Off Fall Time
21.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
23
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
55
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
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AOI530
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=5V
60
3V
4.5V
10V
ID(A)
ID (A)
60
40
40
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
4
Normalized On-Resistance
3
2
VGS=10V
1
3
4
5
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
1.0E+02
ID=20A
125°C
1.0E+01
5
1.0E+00
125°C
IS (A)
4
RDS(ON) (mΩ
Ω)
2
1.8
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
2
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
1
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOI530
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
VDS=15V
ID=20A
4000
Ciss
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2500
Coss
2000
1500
1000
2
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
10.0
1ms
10ms
DC
1.0
400
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
ID (Amps)
100.0
30
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.8°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 4 of 6
AOI530
100
100
80
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
60
40
20
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
175
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: September 2013
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Page 5 of 6
AOI530
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: September 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6