AON6810

AON6810
AlphaMOS 30V Common Drain N-Channel
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
• Common Drain
• Integrated Temp Sense Diode
Application
VDS
30V
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.4mΩ
RDS(ON) (at VGS=4.5V)
< 6.5mΩ
Typical ESD protection
HBM Class 3A
100% UIS Tested
100% Rg Tested
• Battery Management
DFN5X6B
Top View
Bottom View
T2
S2
S2
D1
G2
D1/D2
G1
T1
S1
S1
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
±20
V
A
80
25
IDSM
TA=70°C
Units
V
16
IDM
TA=25°C
Maximum
30
20
ID
TC=100°C
S2
PIN1
PIN1
Continuous Drain
Current G
D2
A
20
Avalanche Current C
IAS
40
A
Avalanche energy L=0.05mH C
EAS
40
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: May 2013
4.1
Steady-State
Steady-State
RθJA
RθJC
W
2.6
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
12.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
Typ
24
53
3
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°C
Max
30
64
4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
1
TJ=125°C
µA
5
1.4
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
1.8
±10
µA
2.2
V
3.6
4.4
4.8
5.8
5.2
6.5
mΩ
V
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.68
1
IF=50µA
0.72
0.78
IF=50µA
0.72
0.78
VFD1
VFD2
IS
Sense Diode Forward Voltage
83
Maximum Body-Diode Continuous Current G
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
mΩ
S
20
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
VDS=30V, VGS=0V
IDSS
Max
V
A
1720
pF
746
pF
61
pF
5.2
7.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
24
34
nC
Qg(4.5V) Total Gate Charge
11
20
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
2.6
5.9
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
5.8
ns
tr
Turn-On Rise Time
3.5
ns
tD(off)
Turn-Off DelayTime
57.5
ns
tf
Turn-Off Fall Time
70
ns
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2013
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Page 2 of 7
AON6810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
4.5V
5V
80
4V
80
3.5V
10V
60
ID(A)
ID (A)
60
125°C
40
40
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
7
2
3
4
5
6
Normalized On-Resistance
1.6
6
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
4
3
VGS=10V
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
1.0E+02
ID=20A
1.0E+01
8
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
125°C
6
4
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
2
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=15V
ID=20A
8
2000
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
1500
Coss
1000
500
Crss
0
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
0
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
Power (W)
ID (Amps)
30
TJ(Max)=150°C
TC=25°C
400
10µs
100.0
0.1
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
10.0
5
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2013
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Page 4 of 7
AON6810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
1000
0.8
800
IF(µA) at 25℃
IF=50µA
IF(µ
µA)
VF (V)
0.6
0.4
600
400
0.2
200
0
0
-50
-25
0
25
50
75
100 125 150 175
0
TJ - Junction Temperature(℃
℃)
Figure 12: Sense Diode Forward Voltage vs.
Temperature
0.4
0.6
0.8
1
1.2
VF(V)
Figure 13: Sense Diode Forward Voltage
1.4
25
20
30
Current rating ID(A)
Power Dissipation (W)
40
0.2
20
10
15
10
5
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 15: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H)
Rev.1.0: May 2013
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Page 5 of 7
AON6810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: May 2013
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Page 6 of 7
AON6810
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: May 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7