Reliability Report

AOS Semiconductor
Product Reliability Report
AON6403,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
This AOS product reliability report summarizes the qualification result for AON6403.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AON6403
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AON6403 combines advanced trench MOSFET technology with a low resistance
package to provide extremely low RDS(ON). This device is ideal for load switch and battery
protection applications.
-RoHS Compliant
-Halogen Free
Detailed information refers to datasheet.
II. Die / Package Information:
AON6403
Standard sub-micron
30V P-Channel MOSFET
Package Type
DFN5x6
Lead Frame
Cu
Die Attach
Solder Paste
Bonding
Clip
Mold Material
Epoxy resin with silica filler
MSL (moisture sensitive level) Level 1 based on J-STD-020
Note * based on information provided by assembler and mold compound supplier
Process
III. Result of Reliability Stress for AON6403
Test Item
Test Condition
Time
Point
MSL
Preconditio
n
168hr 85°c
/85%RH +3 cycle
reflow@260°c
-
HTGB
Temp = 150 c,
Vgs=100% of
Vgsmax
168hrs
500 hrs
1000 hrs
Lot
Attribution
Total
Sample
size
Number
of
Failures
18 lots
3432pcs
0
JESD22A113
847pcs
0
JESD22A108
0
JESD22A108
660pcs
0
JESD22A110
5 lot
6 lot
(Note A*)
Standard
77pcs / lot
Temp = 150 c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
HAST
130c, 85%RH,
33.3 psi, Vgs =
100% of Vgs max
96 hrs
12 lots
Pressure
Pot
121c, 29.7psi,
RH=100%
96 hrs
(Note A*)
18 lots
55 pcs / lot
1386pcs
0
JESD22A102
Temperatur
e Cycle
-65c to 150c,
air to air
250 / 500
cycles
(Note A*)
18 lots
77 pcs / lot
1386pcs
0
JESD22A104
(Note A*)
77 pcs / lot
HTRB
847pcs
5 lot
6 lot
(Note A*)
77pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 3
MTTF = 42134 years
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AON6403). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 2.17 x 10 / [2 x (10x77x500 +12x77x1000) x 258] = 3
9
8
MTTF = 10 / FIT = 3.69 x 10 hrs = 42134 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
-5
K = Boltzmann’s constant, 8.617164 X 10 eV / K