Product Datasheet

ALT6708
HELP4 UMTS900 (Band 8)
WCDMA, LTE Linear PAM
TM
Data Sheet - Rev 2.3
FEATURES
• HSPA, LTE Compliant
• 4th Generation HELPTM technology
• High Efficiency (R99 waveform):
• 40 % @ POUT = +28.8 dBm
• 26 % @ POUT = +17 dBm
ALT6708
• 17 % @ POUT = +13.5 dBm
• 18 % @ POUT = +7.5 dBm
• 10 % @ POUT = +3.5 dBm
• Low Quiescent Current: 3 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port.
• Internal DC Blocks on all RF ports
• Optimized for a 50 Ω System
• 1.8V Control Logic
integrated in the module, thus eliminating the need of
an external coupler. The self-contained 3 mm x 3 mm
x 1 mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Band 8 LTE Wireless Devices
• Band 8 (EGSM) WCDMA/HSPA Wireless
Devices
GND at Slug (pad)
VBATT
1
RFIN
2
VMODE2
3
VMODE1
VEN
10
VCC
PRODUCT DESCRIPTION
The ALT6708 HELP4TM PA is a 4th generation HELPTM
product for LTE and WCDMA devices operating in
UMTS900 (Band 8) . This PA incorporates ANADIGICS’
HELP4TM technology to deliver exceptional efficiency
at low power levels and low quiescent current without
the need for external voltage regulators or converters.
The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown mode
with low leakage current increase handset talk and
standby time. A “daisy chainable” directional coupler is
03/2012
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
ALT6708
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
VMODE2
Mode Control Voltage 2
4
VMODE1
Mode Control Voltage 1
5
VEN
6
CPLOUT
PA Enable Voltage
Coupler Output
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
Supply Voltage
Data Sheet - Rev 2.3
03/2012
VCC
ALT6708
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VMODE2, VEN)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f)
880
-
915
MHz
Supply Voltage (VCC)
+3.1
+3.4
+4.35
V
POUT < +28.8 dBm
Enable Voltage (VEN)
+1.35
0
+1.8
-
+3.1
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE1,VMODE2)
+1.35
0
+1.8
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
WCDMA/UMTS Output Power (1, 3)
R99 WCDMA, HPM
HSPA (MPR=0), HPM
LTE (2)
R99 WCDMA, MPM
(2)
LTE & HSPA (MPR=0), MPM
R99 WCDMA, LPM
(2)
LTE & HSPA (MPR=0), LPM
28.0
26.9
26.9
-
28.8
27.7
27.7
17.0
16.0
7.5
6.5
-
Case Temperature (TC)
-40
-
+90
dBm
COMMENTS
3GPP TS 34.121-1, Rel 8
Table C.11.1.3,
SUBTEST 1
TS 36.101 Rel 8 for LTE
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at 3.1 V, POUT is derated by 0.8 dB.
(2) LTE waveform characteristics: up to 15MHz, QPSK, RB = 16.
(3) For Operation at +105 °C, Pout is derated by 1.0 dB.
3
Data Sheet - Rev 2.3
03/2012
ALT6708
Table 4: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
25
14
9
27.5
17.5
12.5
31
21
16
ACLR E-UTRA
at  10 MHz offset
-
-39
-39
-40
ACLR UTRA
at  7.5 MHz offset
-
ACLR UTRA
at  12.5 MHz offset
POUT
VMODE1
VMODE2
dB
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +6.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-35
-35
-35
dBc
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +6.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-39
-40
-40
-37
-37
-37
dBc
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +6.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-
-59
-60
-60
-40
-40
-40
dBc
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +6.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Power-Added Efficiency
31
18
12
35
22
17
-
%
POUT = +27.7 dBm
POUT = +16 dBm
POUT = +6.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
2.8
4.5
mA
through VCC pin
1.8 V
1.8 V
Mode Control Current
-
0.06
0.15
mA
through VMODE pins, VMODE1,2 = +1.8 V
Enable Current
-
0.03
0.1
mA
through VEN pin, VEN = +1.8 V
BATT Current
-
0.8
1.5
mA
through VBATT pin, VMODE1,2 = +1.8 V
Leakage Current
-
<5
10
A
VBATT = VCC = +4.35 V,
VEN = 0 V, VMODE1,2 = 0 V
Noise in Receive Band
-
-133
-
dBm/Hz
Harmonics
2fo
3fo, 4fo
-
-50
-58
-35
-45
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
20
-
dB
Directivity
-
20
-
dB
Coupler IN_OUT
Daisy Chain Insertion Loss
-
0.35
-
dB
698 MHz to 2620 MHz
Pin 6-8, Shutdown Mode
Spurious Output Level
(all spurious outputs)
-
-
-70
dBc
POUT +27.7 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Gain
Load mismatch stress with no
permanent degradation or failure
Notes:
(1) ACLR and Efficiency measured at 897.5 MHz.
4
COMMENTS
Data Sheet - Rev 2.3
03/2012
925 MHz to 960 MHz
POUT +27.7 dBm
Applies over full operating range
ALT6708
Table 5: Electrical Specifications - WCDMA Operation (R99 Modulation)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
25
14
9
27.5
17.5
12.5
31
21
16
ACLR1 at 5 MHz offset (1)
-
-41
-42
-41
ACLR2 at 10 MHz offset
-
Gain
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT
VMODE1
VMODE2
dB
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-37
-37
-37
dBc
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-55
-57
-59
-48
-48
-48
dBc
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
36
22
13
-
40
26
17
18
10
-
%
POUT = +28.8 dBm
POUT = +17 dBm
POUT = +13.5 dBm
POUT = +7.5 dBm
POUT = +3.5 dBm
0V
1.8 V
1.8 V
1.8 V
1.8 V
0V
0V
0V
1.8 V
1.8 V
-
-
<-70
dBc
POUT +28.8 dBm
In-band land VSWR < 5:1
Out-of-band load VSWR < 10 : 1
Applies over all operating ranges
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 897.5 MHz.
5
COMMENTS
Data Sheet - Rev 2.3
03/2012
ALT6708
PERFORMANCE DATA PLOTS:
(WCDMA Operation at 897.5 MHz and 50 V system)
Figure Figure
4: WCDMA
Gain
(dB)
over
Temperature
4: WCDMA
Gain (dB)
over
Temperature
(Vbatt=VCC=3.4V)
(VBATT
= VCC = +3.4 V)
Figure
5: WCDMA Gain
(dB)
overover
Voltage
Figure
5: WCDMA
Gain
(dB)
Voltage
(Tc=25C )
(T
C = 25 8C)
30
35
25C 3.4Vcc
25C 3.4Vcc
25
25C 4.35Vcc
90C 3.4Vcc
25
20
20
Gain (dB)
Gain (dB)
25C 3.2Vcc
-30C 3.4Vcc
30
15
15
10
10
5
5
0
0
5
10
15
20
25
0
30
0
5
10
Pout (dBm)
Figure
6: WCDMA PAE
(%)(%)
overover
Temperature
Figure
6: WCDMA
PAE
Temperature
(Vbatt=VCC=3.4V)
= VCC = +3.4 V)
(VBATT
45
90C 3.4Vcc
30
25
20
25
20
15
10
10
5
5
0
0
5
10
15
20
25
30
0
Pout (dBm)
Figure 8:Figure
WCDMA
ACLR1 (dBc) over Temperature
8: WCDMA ACRL1 (dBc) over Temperature
= VCC = +3.4 V)
(VBATT(Vbatt=VCC=3.4V)
-20
-30C 3.4Vcc
25C 3.4Vcc
ACLR1 (5MHz dBc)
ACLR1 (5MHz dBc)
-35
-40
-45
15
Pout (dBm)
20
25
30
25C 3.4Vcc
25C 4.35Vcc
-30
-35
-40
-45
-50
-50
-55
-55
-60
-60
0
6
10
25C 3.2Vcc
-25
90C 3.4Vcc
-30
5
9: WCDMAACLR1
ACLR1 (dBc)
overover
Voltage
FigureFigure
9: WCDMA
(dBc)
Voltage
(Tc=25C)
(TC = 25 8C)
-20
-25
25C 4.35Vcc
30
15
0
30
25C 3.4Vcc
35
Efficiency
Efficiency (%)
35
25
25C 3.2Vcc
40
25C 3.4Vcc
20
Figure
7: WCDMA
PAE
Voltage
Figure
7: WCDMA PAE
(%)(%)
overover
Voltage
(T(Tc=25C)
C = 25 8C)
45
-30 3.4cc
40
15
Pout (dBm)
5
10
15
Pout (dBm)
20
25
30
0
5
10
15
Pout (dBm)
Data Sheet - Rev 2.3
03/2012
20
25
30
ALT6708
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
to the VMODE voltages. The Bias Control table below
lists the recommended modes of operation for various
applications.
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the VEN, VMODE1 and VMODE2 voltages.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At ~17dBm - 6.5
dBm, the PA should be “Mode Switched” to Medium
Power Mode. For POUT levels < ~7.5 dBm, the PA
can be switched to Low Power Mode for even lower
quiescent current consumption.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
Table 6: Bias Control
POUT
LEVELS
BIAS
MODE
VEN
VMODE1
VMODE2
vcc
VBATT
Low power
(Low Bias Mode)
 +7.5 dBm
Low
+1.8 V
+1.8 V
+1.8 V
3.1 - 4.35 V
> 3.1 V
Med power
(Medium Bias Mode)
> +6.5 dBm
+17 dBm
Low
+1.8 V
+1.8 V
0V
3.1 - 4.35 V
> 3.1 V
High power
(High Bias Mode)
> +16 dBm
High
+1.8 V
0V
0V
3.1 - 4.35 V
> 3.1 V
-
Shutdown
0V
0V
0V
3.1 - 4.35 V
> 3.1 V
APPLICATION
Shutdown
VBATT
VCC
C5
2.2 µF
C1
C9
0.01 µF 100 pF
GND at slug
1
2
RFIN
VMODE2
VMODE1
VEN
VBATT
VCC
RFIN
RFOUT
10
9
3
VMODE2
CPLIN
8
4
VMODE1
GND
7
5
VEN
CPLOUT 6
Figure 10: Evaluation Board Schematic
7
Data Sheet - Rev 2.3
03/2012
C3
330 pF
C2
C4
0.01 µF 2.2 µF ceramic
RFOUT
CPLIN
CPLOUT
ALT6708
PACKAGE OUTLINE
Figure 11: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code (YYWW)
6708R
LLLLNN
YYWWCC
Part Number
Lot Number
Country Code(CC)
Figure 12: Branding Specification - M45 Package
8
Data Sheet - Rev 2.3
03/2012
ALT6708
PCB AND STENCIL DESIGN GUIDELINE
Figure 13: Recommended PCB Layout Information
9
Data Sheet - Rev 2.3
03/2012
ALT6708
COMPONENT PACKAGING
Pin 1
Figure 14: Carrier Tape
Figure 15: Reel
10
Data Sheet - Rev 2.3
03/2012
ALT6708
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ALT6708RM45Q7
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
ALT6708RM45P9
-40 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
COMPONENT PACKAGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
11
Data Sheet - Rev 2.3
03/2012