HELP3DC TM AWT6631 UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet- Rev 2.1 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm • 24 % @ POUT = +17 dBm AWT6631 • Simpler Calibration with only 2 Bias Modes • Optimized for SMPS Supply • Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <4 µA • Internal Voltage Regulator 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional couplers with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Low Profile Miniature Surface Mount Package • Internal DC blocks on IN/OUT RF ports levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Wireless Handsets and Data Devices for: • WCDMA/HSPA/LTE IMT-Band • CDMA/EVDO Bandclass 6 • TD-SCDMA 1.82/2.0 GHz Band GND at Slug (pad) VBATT 1 RFIN 2 VMODE2 (N/C) 3 VMODE1 VEN PRODUCT DESCRIPTION The AWT6631 PA is designed to provide highly linear output for WCDMA, CDMA , LTE and TD-SCDMA handsets and data devices with high efficiency at both high and low power modes. This HELP3DCTM PA can be used with an external switch mode power supply (SMPS) to improve its efficiency and reduce current consumption further at medium and low output powers. A “daisy chainable” directional coupler is integrated in the module thus eliminating the need of external couplers. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. There are two selectable bias modes that optimize efficiency for different output power 08/2011 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram AWT6631 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 (N/C) 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 2 VMODE2 (N/C) No Connection 4 VMODE1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC Mode Control Voltage 1 PA Enable Voltage Coupler Output Supply Voltage Data Sheet- Rev 2.1 08/2011 VCC AWT6631 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VENABLE) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 1920 1880 2010 - 1980 1920 2025 MHz Supply Voltage (VCC) +0.5 +3.4 +4.35 V POUT < +28.25 dBm Battery Voltage (VBATT) +3.1 +3.4 +4.35 V POUT +28.25 dBm Enable Voltage (VENABLE) +1.35 0 +1.8 0 +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE1) +1.35 0 +1.8 0 +3.1 +0.5 V Low Bias Mode High Bias Mode RF Output Power (POUT) R99 WCDMA, HPM HSPA (MPR=0), HPM LTE, HPM R99 WCDMA, LPM HSPA (MPR=0), LPM LTE, LPM 27.45(1) 26.45(1) 26.45(1) 16.2(1) 15.2(1) 15.2(1) 28.25 27.25 27.25 17 16 16 28.25 27.25 27.25 17 16 16 dBm RF Output Power (POUT), TD-SCDMA TD-SCDMA (HPM) TD-SCDMA (LPM) 26.2(1) 15.2(1) 27 16.0 27 16.0 dBm 3GPP TS 25.62 Section 6.2.1 CDMA Output Power IS-95, HPM IS-95, LPM 26.7(1) 15.7(1) 27.5 16.5 - dBm CDMA2000-RC1 -30 - +90 °C Case Temperature (TC) COMMENTS UMTS Band 1 TD-SCDMA Band TD-SCDMA Band 3GPP TS 34.121-1, Rel 8 Table C.11.1.3 for WCDMA Subtest 1 TS36.101 Rel 8 for LTE The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB. Data Sheet- Rev 2.1 08/2011 3 AWT6631 Table 4: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER TYP MAX UNIT 25 12 27 13 30 16 dB +28.25 dBm +17 dBm 0V 1.8 V ACLR1 at 5 MHz offset (1) - -41 -42 -37 -38 dBc +28.25 dBm +17 dBm 0V 1.8 V ACLR2 at 10 MHz offset - -55 -55 -48 -48 dBc +28.25 dBm +17 dBm 0V 1.8 V 37 21 41 24 - % +28.25 dBm +17 dBm 0V 1.8 V Quiescent Current (Icq) Low Bias Mode - 9 14 mA VMODE1 = +1.8 V Mode Control Current - 0.3 0.5 mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.3 0.5 mA through VENABLE pin BATT Current - 2.5 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 7 µA VBATT = +4.2 V, VCC = +4.2 V, VENABLE = 0 V, VMODE1 = 0 V Noise in Receive Band(2) - -137 -143 -135 -138 dBm/Hz Harmonics 2fo 3fo, 4fo - -39 -55 -35 -50 dBc Input Impedance - - 2:1 VSWR Coupling Factor - 20 - dB Directivity - 20 - dB Coupler IN-OUT Daisy Chain Insertion Loss - <0.25 - dB 698 MHz to 2620 MHz Pin 8 to 6 Shutdown Mode Gain Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure Phase Delta (HPM-LPM) POUT VMODE1 POUT < +28.25 dBm, VMODE1 = 0V POUT < 17 dBm, VMODE1 = +1.8 V POUT < +28.25 dBm - - -70 dBc POUT < +28.25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range - 10 - Deg Notes: (1) ACLR and Efficiency measured at 1950 MHz. (2) Noise measured at 2110 MHz to 2170 MHz. 4 COMMENTS MIN Data Sheet- Rev 2.1 08/2011 AWT6631 Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT 25 12 27 13 30 16 ACLR E-UTRA at 10 MHz offset - -38 -38 ACLR1 UTRA (1) at 7.5 MHz offset - ACLR2 UTRA at 12.5 MHz offset Power-Added Efficiency (1) Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure COMMENTS POUT VMODE1 dB +27.25 dBm +16 dBm 0V 1.8 V - dBc +27.25 dBm +16 dBm 0V 1.8 V -39 -39 - dBc +27.25 dBm +16 dBm 0V 1.8 V - -60 -60 - dBc +27.25 dBm +16 dBm 0V 1.8 V - 36 22 - % +27.25 dBm +16 dBm 0V 1.8 V - - <-70 8:1 - - dBc POUT +27.25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 1950 MHz. Data Sheet- Rev 2.1 08/2011 5 AWT6631 Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1) (TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT 25 12 27 13 30 16 Adjacent Channel Power at +1.25 MHz offset Primary Channel BW - 1.23 MHz Adjacent Channel BW = 30 kHz - -50 -53 Adjacent Channel Power at +1.98 MHz Primary Channel BW=1.23 MHz Adjacent Channel BW=30 kHz - Power-Added Efficiency - Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 6 COMMENTS POUT VMODE1 dB +27.5 dBm +16.5 dBm 0V 1.8 V - dBc +27.5 dBm +16.5 dBm 0V 1.8 V -55 -59 - dBc +27.5 dBm +16.5 dBm 0V 1.8 V 38 31 - % +27.5 dBm +16.5 dBm 0V 1.8 V - - -70 8:1 - - dBc POUT +27.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions VSWR Applies over full operating range Data Sheet- Rev 2.1 08/2011 AWT6631 Table 7: Electrical Specifications - TD-SCDMA Operation (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER COMMENTS MIN TYP MAX UNIT 25 12 27 13 30 16 dB +27 dBm +16 dBm 0V 1.8 V ACLR1 at 1.6 MHz offset - -42 -42 - dBc +27 dBm +16 dBm 0V 1.8 V ACLR2 at 3.2 MHz offset - -55 -55 - dBc +27 dBm +16 dBm 0V 1.8 V Power-Added Efficiency (without DC/DC Converter) - 36 20 - % +27 dBm +16 dBm 0V 1.8 V Quiescent Current (Icq) Low Bias Mode - 8 13 mA VMODE1 = +1.8 V Mode Control Current - 0.3 0.5 mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.3 0.5 mA through VENABLE pin, VEN = +1.8 V BATT Current - 2.5 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 - µA VBATT = +4.2 V, VCC = +4.2 V, VENABLE = 0 V, VMODE1 = 0 V Harmonics 2fo 3fo, 4fo - - -35 -50 dBc Input Impedance - - 2:1 VSWR 8:1 - - VSWR Gain Load mismatch stress with no permanent degradation or failure Data Sheet- Rev 2.1 08/2011 POUT VMODE1 POUT < +27 dBm Applies over full operating range 7 AWT6631 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE1 voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to VMODE1. The Bias Control table lists the recommended modes of operation for various applications. VMODE2 is not necessary for this PA. Two operating modes are available to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At around 17 dBm output power, the PA should be “Mode Switched” to Low power mode for lowest quiescent current consumption. Table 8: Bias Control (CDMA, WCDMA and LTE) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT High power (High Bias Mode) > +16 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V Med/low power (Low Bias Mode) +17 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V - Shutdown 0V 0V 0.5 - 4.35 V > 3.1 V APPLICATION Shutdown Table 9: Bias Control (TD-SCDMA) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT TD-SCDMA - high power (High Bias Mode) > +15 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V TD-SCDMA - med/low power (Low Bias Mode) +16 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1V - Shutdown 0V 0V 0.5 -4..35 V > 3.1 V APPLICATION Shutdown 8 Data Sheet- Rev 2.1 08/2011 AWT6631 PERFROMANCE DATA: Figure 5: WCDMA Gain (dB) over Voltage Figure 4: WCDMA Gain (dB) Temperature Figure 3: WCDMA Gain (dB)over over Temperature (Vbatt=Vcc=3.4V) (V BATT = VCC = 3.4 V) 30 25C 3.2Vcc 25C 3.4Vcc 26 25C 3.4Vcc 90C 3.4Vcc 25 Gain (dB) 24 Gain (dB) 30 -30C 3.4Vcc 28 Figure 4: WCDMA(Tc=25C Gain )(dB) over Voltage (TC = 25 8C) 22 20 18 16 25C 4.2Vcc 25C 3.0Vcc 20 15 14 12 10 0 5 10 15 20 25 10 30 0 5 10 Pout (dBm) 6: WCDMA PAE (%) (%) over FigureFigure 5: WCDMA PAE overTemperature Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 50 45 25C 3.2Vcc 40 25C 3.4Vcc 35 30 30 Efficiency Efficiency (%) 90C 3.4Vcc 35 25 20 25C 4.2Vcc 25C 3.0Vcc 20 15 10 10 5 5 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Pout (dBm) Pout (dBm) Figure 7:Figure WCDMA ACLR1 (dBc) over Temperature 8: WCDMA ACRL1 (dBc) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) FigureFigure 8: WCDMA ACLR1 (dBc) over Voltage 5: WCDMA ACLR1 (dBc) over Voltage (Tc=25C (T C = )25 8C) -25 -30C 3.4Vcc 25C 3.4Vcc -35 -30 90C 3.4Vcc ACLR1 (5MHz dBc) ACLR1 (5MHz dBc) 30 25 15 -30 25 50 25C 3.4Vcc 40 20 Figure 6: WCDMA (%) over Voltage Figure 5: WCDMA PAE PAE (%) over Voltage ) (TC(Tc=25C = 25 8C) -30 3.4cc 45 15 Pout (dBm) -40 -45 -50 25C 3.2Vcc 25C 3.4Vcc -35 25C 4.2Vcc 25C 3.0Vcc -40 -45 -50 -55 0 5 10 15 Pout (dBm) 20 25 30 -55 0 5 10 15 20 25 30 Pout (dBm) Data Sheet- Rev 2.1 08/2011 9 AWT6631 VBATT VCC C6 2.2 µF C1 33 pF C2 0.1 µF GND at slug 1 2 RFIN VMODE1 VEN VBATT VCC RFIN RFOUT 10 9 3 VMODE2 (N/C) CPLIN 8 4 VMODE1 GND 7 5 VEN RFOUT CPLIN CPLOUT 6 C4 0.01 µF RFIN VCC GND GND VBATT Figure 9: Evaluation Board Schematic RFOUT C3 C6 C2 C1 CPLOUT VMODE1 VEN GND GND VMODE2 C4 CPLIN Figure 10: Evaluation Board Layout 10 Data Sheet- Rev 2.1 08/2011 C3 2.2 µFceramic CPLOUT AWT6631 HELP3DCTM The AWT6631 power amplifier module is based on ANADIGICS proprietary HELP3DC™ technology. The PA is designed to operate up to 17 dBm in the low power mode, thus eliminating the need for three gain states, while still maintaining low quiescent current and high efficiency in low and medium power levels. Average weighted efficiency can be increased by using an external switch mode power supply (SMPS) or DC/DC converter to reduce VCC. The directional “daisy chainable” coupler is integrated within the PA module, therefore there is no need for external couplers. voltage source. The PA is turn on/off is controlled by VEN pin. A single VMODE control logic (VMODE1) is needed to operate this device. AWT6631 requires only two calibration sweeps for system calibration, thus saving calibration time. Figure 5 shows one application example on mobile board. C1 and C2 are RF bypass caps and should be placed nearby pin 1 and pin 10. Bypass caps C4 and C5 may not be needed. Also a “T” matching topology is recommended at PA RFIN and RFOUT ports to provide matching between input TX Filter and Duplexer / Isolator. The AWT6631 has an integrated voltage regulator, which eliminates the need for an external constant SMPS VBATT C6 GND RFIN TX filter C1 C2 GND at slug GND Input Matching VBATT VCC RFIN RFOUT VMODE2 CPL IN VMODE1 C5 VEN GND GND C3 GND RFOUT 50Ω Output Matching Duplexer CPLOUT GND GND BB To Detector PA_R0 PA_0N C4 GND Figure 11: Typical Application Circuit Data Sheet- Rev 2.1 08/2011 11 AWT6631 PACKAGE OUTLINE Figure 12: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY=Year; WW=Work week 6631 Part Number LLLLNN YYWWCC Lot Number Country Code (CC) Figure 13: Branding Specification 12 Data Sheet- Rev 2.1 08/2011 AWT6631 PCB AND STENCIL DESIGN GUIDELINE Figure 14: Recommended PCB Layout Information Data Sheet- Rev 2.1 08/2011 13 AWT6631 COMPONENT PACKAGING Pin 1 Figure 15: Tape & Reel Packaging Table 10: Tape & Reel Dimensions 14 PACKAGETYPE TAPE WIDTH POCKETPITCH REEL CAPACITY MAX REEL DIA 3 mm x 3 mm x 1 mm 12 mm 4 mm 2500 7" Data Sheet- Rev 2.1 08/2011 AWT6631 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION AWT6631Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module AWT6631P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module COMPONENTPACKAGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 15 Data Sheet- Rev 2.1 08/2011