2N1671(A-C) UNIJUNCTION TRANSISTORS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol Value Unit Base 1 – emitter reverse voltage Rating VB1E 30 V Base 2 – emitter reverse voltage VB2E 30 V Interbase voltage VB1B2 35 V RMS emitter current IFRMS 50 mA Emitter peak current IEM 2 A Total power dissipation Ptot 450 mW Maximum junction temperature TJ 150 °C Storage temperature range Tstg -55 to 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Emitter reverse current IEB2O VB2E = 30V, IB1 = 0 Emitter saturation voltage VEB1(sat) VB2B1 = 10V, IE = 50mA Interbase resistance RBBO VB2B1 = 3V, IE = 0 Intrinsic standoff ratio η VB2B1 = 10V Valley current IV VB2B1 = 10V, RB2 = 100□ Peak current IP VB2B1 = 25V Min Typ Max 2N1671 - - -12 2N1671A - - -12 2N1671B - - -0.2 2N1671 - - 5 2N1671A - - 5 2N1671B - - 5 2N1671 4.7 - 9.1 2N1671A 4.7 - 9.1 2N1671B 4.7 - 9.1 2N1671 0.47 - 0.62 2N1671A 0.47 - 0.62 2N1671B 0.47 - 0.62 2N1671 - - 8 2N1671A - - 8 2N1671B - - 8 2N1671 - - 25 2N1671A - - 25 2N1671B - - 6 Unit µA V K□ - mA µA Rev. 20150708 High-reliability discrete products and engineering services since 1977 2N1671(A-C) UNIJUNCTION TRANSISTORS MECHANICAL CHARACTERISTICS Case TO-5 Marking Alpha-numeric Polarity See below Rev. 20150708