NTE NTE6409

NTE6409
Unijunction Transistor
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2µA Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2. Capacitor discharge: 10µF or less, 30V or less
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Min
Typ
Max
VB2B1 = 10V, Note 3
0.68
–
0.82
VB2B1 = 3V, IE = 0
4.7
7.0
9.1
kΩ
VB2B1 = 3V, IE = 0, TA = –55° to +125°C
0.1
–
0.9
%/°C
–
3.5
–
V
Modulated Interbase Current IB2(mod) VB2B1 = 10V, IE = 50mA
–
15
–
mA
Emitter Reverse Current
VB2E = 30V, IB1 = 0
–
0.005
0.2
µA
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance
Temperature Coefficient
Emitter Saturation Voltage
Symbol
η
rBB
αrBB
Test Conditions
VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4
IEB2O
Unit
Peak Point Emitter Current
IP
VB2B1 = 25V
–
1
2
µA
Valley Point Current
IV
VB2B1 = 20V, RB2 = 100Ω, Note 4
8
10
18
mA
6
7
–
V
Base–One Peak Pulse
Voltage
VOB1
Note 3. Intrinsic Standoff Ratio, η, is defined by the equation:
V – VF
η= P
VB2B1
Where: VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base–One Junction Diode Drop ([ 0.45V @ 10µA)
Note 4. Use pulse techniques: PW [ 300µs, Duty Cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base 1
Emitter
45°
Base 2/Case
.041 (1.05)