HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns (max.) – Industrial: 25ns (max.) Low-power operation – IDT70V261S Active: 300mW (typ.) Standby: 3.3mW (typ.) – IDT70V261L Active: 300mW (typ.) Standby: 660µW (typ.) Separate upper-byte and lower-byte control for multiplexed ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70V261S/L bus compatibility IDT70V261 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device M/S = VIH for BUSY output flag on Master M/S = VIL for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port TTL-compatible, single 3.3V (±0.3V) power supply Available in a 100-pin TQFP, Thin Quad Plastic Flatpack Industrial temperature range (-40°C to +85°C) is available for selected speed Functional Block Diagram R/WL UBL R/WR UBR LBL CEL OEL LBR CER OER I/O8L-I/O15L I/O Control I/O0L-I/O7L I/O8R-I/O15R I/O Control I/O0R-I/O7R (1,2) BUSYR BUSYL A13L A0L Address Decoder MEMORY ARRAY 14 CEL OEL R/WL SEML (2) INTL Address Decoder (1,2) A13R A0R 14 ARBITRATION INTERRUPT SEMAPHORE LOGIC M/S CER OER R/WR SEMR (2) INTR 3040 drw 01 NOTES: 1. (MASTER): BUSY is output; (SLAVE): BUSY is input. 2. BUSY and INT outputs are non-tri-stated push-pull. DECEMBER 2001 1 ©2001 Integrated Device Technology, Inc. DSC-3040/8 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Description The IDT70V261 is a high-speed 16K x 16 Dual-Port Static RAM. The IDT70V261 is designed to be used as a stand-alone 256K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-ormore word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 300mW of power. The IDT70V261 is packaged in a 100-pin Thin Quad Flatpack. Pin Configurations(1,2,3) 12/11/01 1 2 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 3 73 4 72 5 71 6 70 7 69 8 68 10 11 12 13 14 IDT70V261PF PN100-1(4) 65 64 63 100-Pin TQFP Top View(5) 62 16 61 60 17 59 18 58 19 57 20 56 21 22 55 54 23 53 24 52 15 N/C N/C N/C A6L A5L A4L A3L A2L A1L A0L INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R A5R N/C N/C N/C 67 66 9 51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. Package body is approximately 14mm x 14mm x 1.4mm. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. , 3040 drw 02 I/O7R I/O8R I/O9R I/O10R I/O11R I/O12R I/O13R I/O14R GND I/O15R OER R/WR GND SEMR CER UBR LBR A13R A12R A11R A10R A9R A8R A7R A6R N/C N/C N/C N/C I/O10L I/O11L I/O12L I/O13L GND I/O14L I/O15L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R I/O6R N/C N/C N/C N/C I/O9L I/O8L I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L GND I/O1L I/O0L OEL VCC R/WL SEML CEL UBL LBL A13L A12L A11L A10L A9L A8L A7L Index Pin Names Left Port Right Port Names CEL CER Chip Enable R/WL R/WR Read/Write Enable OEL OER Output Enable A0L - A13L A0R - A13R Address I/O0L - I/O15L I/O0R - I/O15R Data Input/Output SEML SEMR Semaphore Enable UBL UBR Upper Byte Select LBL LBR Lower Byte Select BUSYL BUSYR Busy Flag M/S Master or Slave Select VCC Power GND Ground 3040 tbl 01 6.42 2 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Truth Table I: Non-Contention Read/Write Control Inputs(1) Outputs CE R/W OE UB LB SEM I/O8-15 I/O0-7 H X X X X H High-Z High-Z Deselected: Power-Down X X X H H H High-Z High-Z Both Bytes Deselected: Power-Down L L X L H H DATAIN High-Z Write to Upper Byte Only L L X H L H High-Z DATA IN Write to Lower Byte Only L L X L L H DATAIN DATA IN Write to Both Bytes L H L L H H DATA OUT High-Z Read Upper Byte Only L H L H L H High-Z DATAOUT Read Lower Byte Only L H L L L H DATA OUT DATAOUT Read Both Bytes X X H X X X High-Z High-Z Outputs Disabled Mode 3040 tbl 02 NOTE: 1. A0L — A13L ≠ A0R — A13R Truth Table II: Semaphore Read/Write Control(1) Inputs(1) Outputs CE R/W OE UB LB SEM I/O8-15 I/O0-7 H H L X X L DATAOUT DATAOUT Read Data in Semaphore Flag X H L H H L DATAOUT DATAOUT Read Data in Semaphore Flag H ↑ X X X L DATAIN DATAIN Write I/O0 into Semaphore Flag X ↑ X H H L DATAIN DATAIN Write I/O0 into Semaphore Flag L X X L X L ____ ____ Not Allowed L ____ ____ Not Allowed L X X X L Mode NOTE: 1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A 0-A2. 3 6.42 3040 tbl 03 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C IOUT DC Output Current VTERM(2) Maximum Operating Temperature and Supply Voltage(1) Grade GND Vcc 0OC to +70OC 0V 3.3V + 0.3 -40OC to +85OC 0V 3.3V + 0.3 Ambient Temperature Commercial Industrial 3040 tbl 05 50 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. mA 3040 tbl 04 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V. Recommended DC Operating Conditions(2) Symbol VCC Supply Voltage GND Ground VIH VIL Capacitance(1) (TA = +25°C, f = 1.0MHz) Symbol CIN COUT Parameter Conditions(2) Max. Unit VIN = 3dV 9 pF V OUT = 3dV 10 pF Input Capacitance Output Capacitance Parameter Min. Typ. Max. Unit 3.0 3.3 3.6 V 0 0 0 2.2 ____ Input High Voltage (1) Input Low Voltage -0.3 V CC+0.3 ____ 0.8 V (2) V V 3040 tbl 06 NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.3V. 3040 tbl 07 NOTES: 1. This parameter is determined by device characterization but is not production tested. TQFP package only. 2. 3dV represents the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3v) 70V261S Symbol |ILI| |ILO| Parameter Test Conditions 70V261L Min. Max. Min. Max. Unit 10 ___ 5 µA Input Leakage Current(1) VCC = 3.6V, VIN = 0V to V CC ___ Output Leakage Current CE = VIH, VOUT = 0V to V CC ___ 10 ___ 5 µA 0.4 ___ 0.4 V ___ 2.4 ___ V VOL Output Low Voltage IOL = +4mA ___ VOH Output High Voltage IOH = -4mA 2.4 3040 tbl 08 NOTE: 1. At VCC = 2.0V, input leakages are undefined. 6.42 4 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) (VCC = 3.3V ± 0.3V) 70V261X25 Com'l & Ind Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports CMOS Level Inputs) Full Standby Current (One Port CMOS Level Inputs) Test Condition CE = V IL, Outputs Disabled SEM = VIH f = fMAX(3) CER = CEL = V IH SEMR = SEM L = VIH f = fMAX(3) Version 70V261X35 Com'l Only 70V261X55 Com'l Only Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit COM'L S L 100 100 170 140 90 90 140 120 90 90 140 120 mA IND S L 100 100 200 185 ____ ____ ____ ____ mA ____ ____ ____ ____ COM'L S L 14 12 30 24 12 10 30 24 12 10 30 24 mA IND S L 14 12 60 50 ____ ____ ____ ____ mA ____ ____ ____ ____ CE"A" = VIL and CE"B" = V IH(5) Active Port Outputs Disabled, f=fMAX(3) SEMR = SEM L = VIH COM'L S L 50 50 95 85 45 45 87 75 45 45 87 75 mA IND S L 50 50 130 105 ____ ____ ____ ____ mA ____ ____ ____ ____ Both Ports CEL and CER > V CC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V, f = 0(4) SEMR = SEM L > V CC - 0.2V COM'L S L 1.0 0.2 6 3 1.0 0.2 6 3 1.0 0.2 6 3 mA IND S L 1.0 0.2 6 3 ____ ____ ____ ____ mA ____ ____ ____ ____ COM'L S L 60 60 90 80 55 55 85 74 55 55 85 74 mA IND S L 60 60 125 90 ____ ____ ____ ____ mA ____ ____ ____ ____ CE"A" < 0.2V and CE"B" > VCC - 0.2V (5) SEMR = SEM L > V CC - 0.2V VIN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Disabled, f = fMAX(3) 3040 tbl 09 NOTES: 1. 'X' in part number indicates power rating (S or L) 2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 80mA (Typ.) 3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 5 6.42 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Test Conditions 3.3V Input Pulse Levels 3.3V GND to 3.0V Input Rise/Fall Times 590Ω 3ns Max. Input Timing Reference Levels 1.5V Output Reference Levels 1.5V Output Load 590Ω DATAOUT BUSY INT DATAOUT 30pF 435Ω Figures 1 and 2 5pF* 435Ω 3040 tbl 10 3040 drw 04 3040 drw 03 Figure 1. AC Output Test Load Figure 2. Output Test Load (for tLZ , tHZ , tWZ, tOW) * Including scope and jig. Timing of Power-Up Power-Down CE tPU tPD ICC ISB 3040 drw 05 , AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) 70V261X25 Com'l & Ind Symbol Parameter 70V261X35 Com'l Only 70V261X55 Com'l Only Min. Max. Min. Max. Min. Max. Unit Read Cycle Time 25 ____ 35 ____ 55 ____ ns Address Access Time ____ 25 ____ 35 ____ 55 ns READ CYCLE tRC tAA Chip Enable Access Time (3) ____ 25 ____ 35 ____ 55 ns tABE Byte Enable Access Time (3) ____ 25 ____ 35 ____ 55 ns tAOE Output Enable Access Time ____ 15 ____ 20 ____ 30 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ ns tLZ Output Low-Z Time (1,2) 3 ____ 3 ____ 3 ____ ns tHZ Output High-Z Time (1,2) ____ 15 ____ 20 ____ 25 ns 0 ____ 0 ____ 0 ____ ns ____ 25 ____ 35 ____ 50 ns ____ 15 ____ 15 ____ ns 35 ____ 45 ____ 65 ns tACE tPU Chip Enable to Power Up Time (2) (2) tPD Chip Disable to Power Down Time tSOP Semaphore Flag Update Pulse (OE or SEM) 15 Semaphore Address Access Time ____ tSAA NOTES: 1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. 4. 'X' in part number indicates power rating (S or L). 6.42 6 3040 tbl 11 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Waveform of Read Cycles(5) Industrial and Commercial Temperature Ranges tRC ADDR (4) tAA (4) tACE CE tAOE (4) OE tABE (4) UB, LB R/W tOH tLZ (1) (4) DATAOUT VALID DATA tHZ (2) BUSYOUT tBDD (3,4) 3040 drw 0 NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE , tAA or tBDD . 5. SEM = VIH. AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) 70V261X25 Com'l & Ind Symbol Param eter 70V261X35 Com'l Only 70V261X55 Com'l Only Min. Max. Min. Max. Min. Max. Unit 25 ____ 35 ____ 55 ____ ns tEW Chip E nab le to E nd -o f-W rite (3) 20 ____ 30 ____ 45 ____ ns tAW A d d re s s Valid to E nd -o f-W rite 20 ____ 30 ____ 45 ____ ns 0 ____ 0 ____ 0 ____ ns 25 ____ 40 ____ ns 0 ____ 0 ____ ns WRITE CYCLE tWC tAS W rite Cycle Tim e A d d re s s S e t-up Tim e (3) tWP W rite P ulse W id th 20 ____ tWR Write Re co v e ry Tim e 0 ____ tDW Data Valid to E nd -o f-W rite 15 tHZ Outp ut Hig h-Z Tim e (1,2) (4) ____ 20 ____ 30 ____ ns ____ 15 ____ 20 ____ 25 ns ns tDH Data Ho ld Tim e 0 ____ 0 ____ 0 ____ tWZ W rite E nab le to Outp ut in Hig h-Z (1,2) ____ 15 ____ 20 ____ 25 ns tOW Outp ut A ctiv e fro m E nd -o f-W rite (1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM F lag W rite to Re ad Tim e 5 ____ 5 ____ 5 ____ ns tSPS SEM F lag Co nte ntio n W ind o w 5 ____ 5 ____ 5 ____ ns 3040 tbl 1 2 NOTES: 1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part number indicates power rating (S or L). 7 6.42 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8) tWC ADDRESS tHZ (7) OE tAW CE or SEM (9) CE or SEM (9) tWP (2) tAS (6) tWR (3) R/W tWZ (7) tOW (4) DATAOUT (4) tDW tDH DATAIN 3040 drw 07 Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5) tWC ADDRESS tAW (9) CE or SEM tAS (6) tWR(3) tEW (2) (9) UB or LB R/W tDW tDH DATAIN 3040 drw 08 NOTES: 1. R/W or CE or UB and LB must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or t WP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE or R/W. 7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW . If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP . 9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. 6.42 8 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Semaphore Read after Write Timing, Either Side(1) tOH tSAA A0-A2 VALID ADDRESS tWR tAW tEW VALID ADDRESS tACE SEM tSOP tDW DATAIN VALID I/O0 tAS tWP DATAOUT VALID(2) tDH R/W tSWRD tAOE OE Write Cycle Read Cycle 3040 drw 09 NOTES: 1. CE = VIH or UB & LB = VIH for the duration of the above timing (both write and read cycle). 2. “DATAOUT VALID” represents all I/O's (I/O0-I/O15) equal to the semaphore value. Timing Waveform of Semaphore Write Contention(1,3,4) A0"A"-A2"A" (2) SIDE "A" MATCH R/W"A" SEM"A" tSPS A0"B"-A2"B" (2) SIDE "B" MATCH R/W"B" SEM"B" 3040 drw 10 NOTES: 1. DOR = DOL = VIL, CER = CEL = VIH, or both UB & LB = VIH. 2. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 3. This parameter is measured from R/W"A" or SEM "A" going HIGH to R/W"B" or SEM"B" going HIGH. 4. If tSPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag. 9 6.42 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6) 70V261X25 Com'l & Ind Symbol Parameter 70V261X35 Com'l Only 70V261X55 Com'l Only Min. Max. Min. Max. Min. Max. Unit 25 ____ 35 ____ 45 ns 25 ____ 35 ____ 45 ns BUSY TIMING (M/S = V IH) tBAA BUSY Access Time from Address Match ____ tBDA BUSY Disable Time from Address Not Match ____ tBAC BUSY Access Time from Chip Enable Low ____ 25 ____ 35 ____ 45 ns tBDC BUSY Disable Time from Chip Enable High ____ 25 ____ 35 ____ 45 ns 5 ____ 5 ____ 5 ____ ns ____ 35 ____ 40 ____ 50 ns 20 ____ 25 ____ 25 ____ ns 0 ____ 0 ____ 0 ____ ns 20 ____ 25 ____ 25 ____ ns ____ 55 ____ 65 ____ 85 ns 50 ____ 60 ____ 80 tAPS Arbitration Priority Set-up Time tBDD BUSY Disable to Valid Data tWH Write Hold After BUSY(5) (2) (3) BUSY INPUT TIMING (M/S = VIL) tWB BUSY Input to Write (4) tWH Write Hold After BUSY (5) PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ns 2945 tbl 13 NOTES: 1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – t WP (actual) or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". 6. "X" in part number indicates power rating (S or L). Timing Waveform of write with Port-to-Port Read and BUSY(2,4,5) tWC MATCH ADDR"A" tWP R/W"A" tDW tDH VALID DATAIN "A" tAPS (1) MATCH ADDR"B" tBAA tBDA tBDD BUSY"B" tWDD DATAOUT "B" VALID (3) tDDD NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE). 2. CEL = CER = VIL 3. OE = VIL for the reading port. 4. If M/S = VIL (SLAVE), then BUSY is an input (BUSY"A" = VIH and BUSY"B" = "don't care", for this example). 5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A". 6.42 10 3040 drw 11 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Timing Waveform of Write with BUSY tWP R/W"A" tWB BUSY"B" tWH R/W"B" (1) (2) 3040 drw 12 NOTES: 1. tWH must be met for both BUSY input (SLAVE) and output (MASTER). 2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH. Waveform of BUSY Arbitration Controlled by CE Timing(1) ADDR"A" and "B" ADDRESSES MATCH CE"A" tAPS (2) CE"B" tBAC tBDC BUSY"B" 3040 drw 13 Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing(1) ADDR"A" ADDRESS "N" tAPS (2) ADDR"B" MATCHING ADDRESS "N" tBAA tBDA BUSY"B" 3040 drw 14 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”. 2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted. 11 6.42 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) 70V261X25 Com 'l & Ind Sym bol Param eter 70V261X35 Com 'l Only 70V261X55 Com 'l Only Min. Max. Min. Max. Min. Max. Unit INTERRUPT TIM ING tAS A d d re ss S e t-up Tim e 0 ____ 0 ____ 0 ____ ns tWR Write Re co ve ry Tim e 0 ____ 0 ____ 0 ____ ns tINS Inte rrup t S e t Tim e ____ 25 ____ 30 ____ 40 ns tINR Inte rrup t Re s e t Tim e ____ 30 ____ 35 ____ 45 ns 3040 tb l 1 4 NOTES: 1. 'X' in part number indicates power rating (S or L). Waveform of Interrupt Timing(1) tWC ADDR"A" INTERRUPT SET ADDRESS tAS (2) (3) tWR (4) CE"A" R/W"A" tINS (3) INT"B" 3040 drw 15 tRC INTERRUPT CLEAR ADDRESS ADDR"B" tAS (2) (3) CE"B" OE"B" tINR (3) INT"B" 3040 drw 16 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. See Interrupt Truth Table III. 3. Timing depends on which enable signal is asserted last. 4. Timing depends on which enable signal is de-asserted first. 6.42 12 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Truth Table III Interrupt Flag(1) Left Port CEL R/WL L OEL L X X 3FFF X X X L INTL A13L-A0L X X X Right Port L CER R/WR X X X OER A13R-A0R INTR Function X L(2) Set Right INTR Flag X X X X L L 3FFF H Reset Right INTR Flag X L(3) L L X 3FFE X Set Left INTL Flag (2) X X X X X Reset Left INTL Flag 3FFE H (3) 3040 tbl 15 NOTES: 1. Assumes BUSYL = BUSYR =VIH. 2. If BUSYL = VIL, then no change. 3. If BUSYR = VIL, then no change. Truth Table IV Address BUSY Arbitration Inputs Outputs CEL CER A0L-A13L A0R-A13R BUSYL(1) BUSYR(1) Function X X NO MATCH H H Normal H X MATCH H H Normal X H MATCH H H Normal L L MATCH (2) (2) Write Inhibit(3) 3040 tbl 16 NOTES: 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT70V261 are push pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes. 2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. VIH if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs cannot be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. Truth Table V Example of Semaphore Procurement Sequence(1,2,3) Functions D0 - D15 Left D0 - D15 Right Status No Action 1 1 Semaphore free Left Port Writes "0" to Semaphore 0 1 Left port has semaphore token Right Port Writes "0" to Semaphore 0 1 No change. Right side has no write access to semaphore Left Port Writes "1" to Semaphore 1 0 Right port obtains semaphore token Left Port Writes "0" to Semaphore 1 0 No change. Left port has no write access to semaphore Right Port Writes "1" to Semaphore 0 1 Left port obtains semaphore token Left Port Writes "1" to Semaphore 1 1 Semaphore free Right Port Writes "0" to Semaphore 1 0 Right port has semaphore token Right Port Writes "1" to Semaphore 1 1 Semaphore free Left Port Writes "0" to Semaphore 0 1 Left port has semaphore token Left Port Writes "1" to Semaphore 1 1 Semaphore free NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V261. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A0-A2. 3. CE = VIH, SEM = V IL to access the semaphore. Refer to the Semaphore Read/Write Control Truth Table. 13 6.42 3040 tbl 17 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Functional Description write operations can be prevented to a port by tying the BUSY pin for that port LOW. The BUSY outputs on the IDT70V261 RAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the BUSY indication for the resulting array requires the use of an external AND gate. The IDT70V261 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V261 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE HIGH). When a port is enabled, access to the entire memory array is permitted. Width Expansion with Busy Logic Master/Slave Arrays Interrupts When expanding an IDT70V261 RAM array in width while using BUSY logic, one master part is used to decide which side of the RAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master use the BUSY signal as a write inhibit signal. Thus on the IDT70V261 SRAM the BUSY pin is an output if the part is used as a master (M/S pin = VIH), and the BUSY pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for part of the other word. The BUSY arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with either the R/W signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 3FFE (HEX), where a write is defined as CER = R/WR = VIL per Truth Table III. The left port clears the interrupt through access of address location 3FFE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location 3FFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 3FFF. The message (8 bits) at 3FFE or 3FFF is user-defined since it is an addressable SRAM location. If the interrupt function is not used, address locations 3FFE and 3FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Busy Logic Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a BUSY indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any busy indication as an interrupt source to flag an illegal or illogical operation. If the write inhibit function of BUSY logic is not desirable, the BUSY logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended BUSYL MASTER Dual Port RAM BUSYL CE BUSYR CE BUSYR SLAVE Dual Port RAM BUSYL SLAVE Dual Port RAM BUSYL CE BUSYR DECODER MASTER Dual Port RAM BUSYL Semaphores CE BUSYR BUSYR , 3040 drw 17 Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V261 RAMs. The IDT70V261 is a fast Dual-Port 16K x 16 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the DualPort SRAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port SRAM or any other shared resource. The Dual-Port SRAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a non-semaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port RAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port SRAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table I where CE and SEM are both HIGH. 6.42 14 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Systems which can best use the IDT70V261 contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70V261's hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70V261 does not use its semaphore flags to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems. How the Semaphore Flags Work The semaphore logic is a set of eight latches which are independent of the Dual-Port SRAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it proceeds to assume control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active LOW. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70V261 in a separate memory space from the Dual-Port SRAM. This address space is accessed by placing a LOW input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, OE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Truth Table V). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thor- ough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by L PORT R PORT SEMAPHORE REQUEST FLIP FLOP D0 D Q SEMAPHORE REQUEST FLIP FLOP Q D WRITE D0 WRITE SEMAPHORE READ SEMAPHORE READ , 3040 drw 18 Figure 4. IDT70V261 Semaphore Logic the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side’s output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Truth Table V). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag low and the other side HIGH. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay LOW until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no 15 6.42 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. Using SemaphoresSome Examples Perhaps the simplest application of semaphores is their application as resource markers for the IDT70V261’s Dual-Port RAM. Say the 16K x 16 RAM was to be divided into two 8K x 16 blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indicator for the upper section of memory. To take a resource, in this example the lower 8K of Dual-Port RAM, the processor on the left port could write and then read a zero in to Semaphore 0. If this task were successfully completed (a zero was read back rather than a one), the left processor would assume control of the lower 8K. Meanwhile the right processor was attempting to gain control of the resource after the left processor, it would read back a one in response to the zero it had attempted to write into Semaphore 0. At this point, the software could choose to try and gain control of the second 8K section by writing, then reading a zero into Semaphore 1. If it succeeded in gaining control, it would lock out the left side. Once the left side was finished with its task, it would write a one to Semaphore 0 and may then try to gain access to Semaphore 1. If Semaphore 1 was still occupied by the right side, the left side could undo its semaphore request and perform other tasks until it was able to write, then read a zero into Semaphore 1. If the right processor performs a similar task with Semaphore 0, this protocol would allow the two processors to swap 8K blocks of Dual-Port RAM with each other. The blocks do not have to be any particular size and can even be variable, depending upon the complexity of the software using the semaphore flags. All eight semaphores could be used to divide the Dual-Port RAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides rather than being given a common meaning as was shown in the example above. Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “off-limits” to the CPU, both the CPU and the I/O devices could access their assigned portions of memory continuously without any wait states. Semaphores are also useful in applications where no memory “WAIT” state is available on one or both sides. Once a semaphore handshake has been performed, both processors can access their assigned RAM segments at full speed. Another application is in the area of complex data structures. In this case, block arbitration is very important. For this application one processor may be responsible for building and updating a data structure. The other processor then reads and interprets that data structure. If the interpreting processor reads an incomplete data structure, a major error condition may exist. Therefore, some sort of arbitration must be used between the two different processors. The building processor arbitrates for the block, locks it and then is able to go in and update the data structure. When the update is completed, the data structure block is released. This allows the interpreting processor to come back and read the complete data structure, thereby guaranteeing a consistent data structure. 6.42 16 IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A 999 A A Power Speed Package Process/ Temperature Range Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) PF 100-pin TQFP (PN100-1) 25 35 55 Commercial & Industrial Commercial Only Commercial Only S L Standard Power Low Power Speed in nanoseconds 70V261 256K (16K x 16) 3.3V Dual-Port RAM w/ Interrupt 3040 drw 19 NOTE: 1. For other speeds, packages and powers contact your sales office. Datasheet Document History 3/25/99: 6/10/99: 8/30/99: 11/12/99: 6/7/00: 12/01/01: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Page 2 Added additional notes to pin configurations Changed drawing format Page 1 Changed 660mW to 660µW Replaced IDT logo Page 4 Increated storage temperature parameter Clarified TA Parameter Page 5 DC Electrical parameters–changed wording from "open" to "disabled" Changed ±200mV to 0mV in notes Page 2 Added date revision to pin configurations Page 5 Added I-temp values for 25ns to DC Electrical Characteristics Pages 4, 5, 6, 7, 10 & 12 Removed I-temp footnotes from all tables Page 17 Added I-temp offering in ordering information Page 1 & 17 Replaced TM logo with ® logo CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 17 6.42 for Tech Support: 831-754-4613 [email protected]