IDT IDT7007S25PFI

HIGH-SPEED
32K x 8 DUAL-PORT
STATIC RAM
Features
◆
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 25/35/55ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/20/25/35/55ns (max.)
Low-power operation
– IDT7007S
Active: 850mW (typ.)
Standby: 5mW (typ.)
– IDT7007L
Active: 850mW (typ.)
Standby: 1mW (typ.)
IDT7007 easily expands data bus width to 16 bits or more
◆
◆
◆
◆
◆
◆
◆
◆
IDT7007S/L
using the Master/Slave select when cascading more than
one device
M/S = H for BUSY output flag on Master,
M/S = L for BUSY input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in 68-pin PGA and PLCC and a 80-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
OEL
OER
CEL
R/WL
CER
R/WR
I/O0L- I/O7L
I/O0R-I/O7R
I/O
Control
I/O
Control
(1,2)
(1,2)
BUSYR
BUSYL
A14L
A0L
Address
Decoder
MEMORY
ARRAY
15
CEL
OEL
R/WL
SEML
(2)
INTL
Address
Decoder
A14R
A0R
15
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/S
CER
OER
R/WR
SEMR
INTR(2)
2940 drw 01
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY and INT outputs are non-tri-stated push-pull.
JUNE 1999
1
DSC 2940/8
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7007 is a high-speed 32K x 8 Dual-Port Static RAM. The
IDT7007 is designed to be used as a stand-alone 256K-bit Dual-Port RAM
or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more
word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach
in 16-bit or wider memory system applications results in full-speed, errorfree operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very LOW standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 850mW of power.
The IDT7007 is packaged in a 68-pin pin PGA, a 68-pin PLCC,
and an 80-pin thin quad flatpack, TQFP. Military grade product is
manufactured in compliance with the latest revision of MIL-PRF-38535
QML, Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
9
10
8
1 68 67 66 65 64 63 62 61
60
11
59
12
58
13
57
14
56
7
6
5
4
15
3
2
IDT7007J
J68-1(4)
16
17
18
68-Pin PLCC
Top View(5)
19
55
54
53
52
51
20
50
21
49
22
48
23
47
24
46
25
45
A14R
A13R
GND
A12R
A11R
A10R
A9R
A8R
A7R
A6R
A5R
OER
R/WR
SEMR
CER
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O7R
N/C
I/O2L
I/O3L
I/O4L
I/O5L
GND
I/O6L
I/O7L
VCC
GND
I/O0R
I/O1R
I/O2R
VCC
I/O3R
I/O4R
I/O5R
I/O6R
A14L
A13L
VCC
A12L
A11L
A10L
A9L
A8L
A7L
A6L
INDEX
OEL
R/WL
SEML
CEL
I/O1L
I/O0L
N/C
Pin Configurations(1,2,3)
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
2
A5L
A4L
A3L
A2L
A1L
A0L
INTL
BUSYL
GND
M/S
BUSYR
INTR
A0R
A1R
A2R
A3R
A4R
2940 drw 02
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
INDEX
7007PF
PN80-1(4)
80-Pin TQFP
Top View(5)
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O7R
N/C
OER
R/WR
SEMR
CER
N/C
A14R
A13R
GND
A12R
A11R
A10R
A9R
A8R
A7R
A6R
A5R
N/C
N/C
N/C
I/O2L
I/O3L
I/O4L
I/O5L
GND
I/O6L
I/O7L
VCC
N/C
GND
I/O0R
I/O1R
I/O2R
VCC
I/O3R
I/O4R
I/O5R
I/O6R
N/C
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
I/O1L
I/O0L
N/C
OEL
R/WL
SEML
CEL
N/C
A14L
A13L
VCC
A12L
A11L
A10L
A9L
A8L
A7L
A6L
N/C
N/C
Pin Configurations(1,2,3) (con't.)
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
3
N/C
A5L
A4L
A3L
A2L
A1L
A0L
INTL
BUSYL
GND
M/S
BUSYR
,
INTR
A0R
A1R
A2R
A3R
A4R
N/C
N/C
2940 drw 03
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Pin Configurations(1,2,3) (con't.)
51
11
A5L
50
A4L
48
A2L
46
44
42
A0L BUSYL M/S
40
38
INTR A1R
36
A3R
49
A3L
47
A1L
45
43
41
39
37
INTL GND BUSYR A0R A2R
35
A4R
34
A5R
33
A6R
53
A7L
52
10
55
A9L
54
09
A8L
32
A7R
08
57
56
A11L A10L
30
A9R
31
A8R
07
59
58
VCC A12L
28
A11R
29
A10R
26
GND
27
A12R
61
06
A6L
IDT7007G
G68-1(4)
60
A14L
A13L
68-Pin PGA
Top View(5)
63
62
05 SEML
CEL
24
25
A14R A13R
04
65
64
OEL R/WL
22
23
SEMR CER
03
67
66
I/O0L N/C
20
OER
02
1
3
68
I/O1L I/O2L I/O4L
2
4
I/O3L I/O5L
01
A
B
C
21
R/WR
5
7
9
11
13
15
GND I/O7L GND I/O1R VCC I/O4R
18
19
I/O7R
N/C
6
17
I/O6R
8
I/O6L
D
10
12
14
16
VCC I/O0R I/O2R I/O3R I/O5R
E
F
G
H
J
K
L
INDEX
2940 drw 04
NOTES:
1. All Vcc pins must be connected to power supply
2. All GND pins must be connected to power supply
3. Package body is approximately 1.8 in x 1.8 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
Pin Names
Left Port
Right Port
Names
CEL
CER
Chip Enables
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L - A14L
A0R - A14R
Address
I/O0L - I/O7L
I/O0R - I/O7R
Data Input/Output
SEML
SEMR
Semaphore Enable
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
M/S
Master or Slave Select
VCC
Power
GND
Ground
2940 tbl 01
4
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs(1)
Outputs
CE
R/W
OE
SEM
I/O0-7
H
X
X
H
High-Z
Deselected: Power-Down
L
L
X
H
DATAIN
Write to Memory
L
H
L
H
DATAOUT
X
X
H
X
High-Z
Mode
Read Memory
Outputs Disabled
2940 tbl 02
NOTE:
1. A0L — A14L ≠ A0R — A14R
Truth Table II: Semaphore Read/Write Control(1)
Inputs
Outputs
CE
R/W
OE
SEM
I/O0-7
Mode
H
H
L
L
DATA OUT
H
↑
X
L
DATA IN
L
X
X
L
______
Read Semap hore Flag Data Out (I/O 0-I/O7)
Write I/O0 into Semaphore Flag
Not Allowed
2940 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from all I/O's. These eight semaphores are addressed by A0 - A2.
Absolute Maximum Ratings(1)
Symbol
Commercial
& Industrial
Military
Unit
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
Temperature
Under Bias
-55 to +125
TSTG
Storage
Temperature
-55 to +120
-65 to +150
IOUT
DC Output
Current
50
50
VTERM(2)
TBIAS
Rating
Maximum Operating Temperature
and Supply Voltage(1,2)
Grade
Military
-55 to +135
o
o
Commercial
C
Industrial
C
Ambient
Temperature
GND
Vcc
-55OC to+125OC
0V
5.0V + 10%
0OC to +70OC
0V
5.0V + 10%
-40 C to +85 C
0V
5.0V + 10%
O
O
2940 tbl 05
NOTES:
1. This is the parameter TA.
2. Industrial temperature: for other speeds, packages and powers contact your
sales office.
mA
2940 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
Recommended Operating
Conditions
Symbol
Capacitance (TA = +25°C, f = 1.0mhz)
Symbol
CIN
COUT
(1)
Parameter
Input Capacitance
Output Capacitance
(2)
Conditions
Max.
VIN = 3dV
9
pF
VOUT = 3dV
10
pF
VCC
Supply Voltage
GND
Ground
VIH
Input High Voltage
VIL
Unit
Parameter
Input Low Voltage
2940 tbl 07
5
Typ.
Max.
Unit
4.5
5.0
5.5
V
0
0
0
V
2.2
____
6.0(2)
V
____
0.8
(1)
-0.5
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Min.
V
2940 tbl 06
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
7007S
Symbol
Parameter
Test Conditions
7007L
Min.
Max.
Min.
Max.
Unit
VCC = 5.5V, VIN = 0V to V CC
___
10
___
5
µA
Output Leakage Current
CE = VIH, VOUT = 0V to V CC
___
10
___
5
µA
VOL
Output Low Voltage
IOL = 4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
|ILI|
(1)
Input Leakage Current
|ILO|
2940 tbl 08
NOTE:
1. At Vcc < 2.0V, input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,6) (VCC = 5.0V ± 10%)
7007X15
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
Standby Current
(One Port - TTL Level
Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Test Condition
Version
7007X20
Com'l Only
7007X25
Com'l &
Military
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
mA
COM'L
S
L
190
190
325
285
180
180
315
275
170
170
305
265
MIL &
IND
S
L
___
___
___
___
___
___
___
___
170
170
345
305
COM'L
S
L
35
35
85
60
30
30
85
60
25
25
85
60
MIL &
IND
S
L
___
___
___
___
___
___
___
___
25
25
100
80
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Open,
f=fMAX(3)
SEMR = SEML = VIH
COM'L
S
L
125
125
220
190
115
115
210
180
105
105
200
170
MIL &
IND
S
L
___
___
___
___
___
___
___
___
105
105
230
200
Both Ports CEL and
CER > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
MIL &
IND
S
L
___
___
___
___
___
___
___
___
1.0
02.
30
10
COM'L
S
L
120
120
190
160
110
110
185
160
100
100
175
160
MIL &
IND
S
L
___
___
___
___
___
___
___
___
100
100
200
175
CE = VIL, Outputs Open
SEM = VIH
f = fMAX(3)
CEL = CER = VIH
SEMR = SEML = VIH
f = fMAX(3)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC - 0.2V
VIN > VCC - 0.2V or V IN < 0.2V
Active Port Outputs Open
f = fMAX(3)
mA
mA
mA
mA
2940 tbl 09
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA (Typ.)
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input
levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
6
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,6) (con't.) (VCC = 5.0V ± 10%)
7007X35
Com'l &
Military
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
Standby Current
(One Port - TTL Level Inputs)
Full Standby Current (Both
Ports - All CMOS Level
Inputs)
Full Standby Current
(One Port - All CMOS Level
Inputs)
Test Condition
Version
7007X55
Com'l, Ind
& Military
Typ. (2)
Max.
Typ.(2)
Max.
Unit
mA
COM'L
S
L
160
160
295
255
150
150
270
230
MIL &
IND
S
L
____
____
335
295
150
150
310
270
COM'L
S
L
20
20
85
60
20
20
85
60
MIL &
IND
S
L
____
____
100
80
13
13
100
80
COM'L
S
L
95
95
185
155
85
85
165
135
MIL &
IND
S
L
____
____
215
185
85
85
195
165
Both Ports CEL and
CER > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
MIL &
IND
S
L
____
____
30
10
1.0
0.2
30
10
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC - 0.2V
VIN > VCC - 0.2V or V IN < 0.2V
Active Port Outputs Open
f = fMAX(3)
COM'L
S
L
90
90
160
135
80
80
135
110
MIL &
IND
S
L
____
190
165
80
80
165
140
CE = VIL, Outputs Open
SEM = VIH
f = fMAX(3)
CEL = CER = VIH
SEMR = SEML = VIH
f = fMAX(3)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Open,
f=fMAX(3)
SEMR = SEML = VIH
____
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA (Typ.)
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using
“AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
7
mA
mA
mA
mA
2940 tbl 10
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Test Conditions
5V
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
893Ω
5ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
5V
DATAOUT
BUSY
INT
893Ω
DATAOUT
30pF
347Ω
5pF*
347Ω
Figures 1 and 2
2940 tbl 11
.
2940 drw 05
2940 drw 06
Figure 2. Output Test Load
Figure 1. AC Output Test Load
(for tLZ, tHZ, tWZ, tOW)
* Including scope and jig.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4,5)
7007X15
Com'l Only
Symbol
Parameter
7007X20
Com'l Only
7007X25 Com'l
& Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
15
____
20
____
25
____
ns
tAA
Address Access Time
____
15
____
20
____
25
ns
tACE
Chip Enable Access Time (3)
____
15
____
20
____
25
ns
tAOE
Output Enable Access Time
____
10
____
12
____
13
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
3
____
3
____
3
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
(1,2)
tLZ
Output Low-Z Time
tHZ
Output High-Z Time (1,2)
tPU
Chip Enable to Power Up Time (2)
tPD
Chip Disable to Power Down Time (2)
____
15
____
20
____
25
ns
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
____
10
____
12
____
ns
tSAA
Semaphore Address Access Time
____
15
____
20
____
25
ns
2940 tbl 12a
7007X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
7007X55
Com'l, Ind
& Military
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
35
____
55
____
ns
tAA
Address Access Time
____
35
____
55
ns
tACE
Chip Enable Access Time (3)
____
35
____
55
ns
tAOE
Output Enable Access Time
____
20
____
30
ns
tOH
Output Hold from Address Change
3
____
3
____
ns
tLZ
Output Low-Z Time (1,2)
3
____
3
____
ns
____
15
____
25
ns
0
____
0
____
ns
____
35
____
50
ns
15
____
ns
____
55
ns
(1,2)
tHZ
Output High-Z Time
tPU
Chip Enable to Power Up Time (2)
(2)
tPD
Chip Disable to Power Down Time
tSOP
Semaphore Flag Update Pulse (OE or SEM)
15
____
tSAA
Semaphore Address Access Time
____
35
NOTES:
1. Transition is measured ±200mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. 'X' in part numbers indicates power rating (S or L).
5. Industrial temperature: for other speeds, packages and powers contact your sales office.
8
2940 tbl 12b
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of Read Cycles(5)
tRC
ADDR
(4)
tAA
(4)
tACE
CE
tAOE
(4)
OE
R/W
tLZ
tOH
(1)
DATAOUT
VALID DATA
(4)
tHZ (2)
BUSYOUT
tBDD (3,4)
2940 drw 07
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first CE or OE.
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.
5. SEM = VIH.
Timing of Power-Up Power-Down
CE
ICC
tPU
tPD
ISB
,
2940 drw 08
9
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5,6)
7007X15
Com'l Only
Symbol
Parameter
7007X20
Com'l Only
7007X25
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
15
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
____
10
____
12
____
15
ns
ns
WRITE CYCLE
tWC
tHZ
Write Cycle Time
Output High-Z Time
(1,2)
(4)
tDH
Data Hold Time
0
____
0
____
0
____
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
12
____
15
ns
tOW
Output Active from End-of-Write (1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
2940 tbl 13a
7007X35
Com'l Only
Symbol
Parameter
7007X55
Com'l &
Military
Min.
Max.
Min.
Max.
Unit
35
____
55
____
ns
tEW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
ns
0
____
0
____
ns
WRITE CYCLE
tWC
Write Cycle Time
(3)
tAS
Address Set-up Time
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
30
____
ns
____
12
____
25
ns
0
____
0
____
ns
____
12
____
25
ns
0
____
0
____
ns
5
____
ns
5
____
(1,2)
tHZ
Output High-Z Time
tDH
Data Hold Time (4)
tWZ
Write Enable to Output in High-Z(1,2)
tOW
Output Active from End-of-Write
(1,2,4)
tSWRD
SEM Flag Write to Read Time
5
____
tSPS
SEM Flag Contention Window
5
____
ns
2940 tbl 13b
NOTES:
1. Transition is measured ±200mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powrs contact your sales office.
10
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC
ADDRESS
tHZ
(7)
OE
tAW
CE or SEM
(9)
tWP (2)
tAS (6)
tWR
(3)
R/W
tWZ (7)
tOW
(4)
DATAOUT
(4)
tDW
tDH
DATAIN
2940 drw 09
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
tWC
ADDRESS
tAW
CE or SEM
(9)
(6)
tAS
tWR(3)
tEW (2)
R/W
tDW
tDH
DATAIN
2940 drw 10
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last, CE or R/W.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured +200mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be
placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as
the specified tWP.
9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition.
11
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tSAA
A0-A2
VALID ADDRESS
tAW
tOH
VALID ADDRESS
tWR
tACE
tEW
SEM
tDW
tSOP
DATAOUT
VALID
DATAIN VALID
DATA0
tAS
tWP
tDH
R/W
tSWRD
OE
tAOE
tSOP
Write Cycle
Read Cycle
2940 drw 11
NOTE:
1. CE = VIH for the duration of the above timing (both write and read cycle).
Timing Waveform of Semaphore Write Contention(1,3,4)
A0"A"-A2"A"
(2)
SIDE
"A"
MATCH
R/W"A"
SEM"A"
tSPS
A0"B"-A2"B"
(2)
SIDE
"B"
MATCH
R/W"B"
SEM"B"
2940 drw 12
NOTES:
1. DOR = DOL = VIL, CER = CEL = VIH.
2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A".
3. This parameter is measured from R/WA or SEMA going HIGH to R/WB or SEMB going HIGH.
4. If tSPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag.
12
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(6,7)
7007X15
Com'l Only
Symbol
Parameter
7007X20
Com'l Only
7007X25
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/S=VIH)
tBAA
BUSY Access Time from Address Match
____
15
____
20
____
20
ns
tBDA
BUSY Disable Time from Address Not Matched
____
15
____
20
____
20
ns
tBAC
BUSY Access Time from Chip Enable Low
____
15
____
20
____
20
ns
tBDC
BUSY Access Time from Chip Enable High
____
15
____
17
____
17
ns
tAPS
Arbitration Priority Set-up Time (2)
5
____
5
____
5
____
ns
tBDD
BUSY Disable to Valid Data(3)
____
18
____
30
____
30
ns
tWH
Write Hold After BUSY(5)
12
____
15
____
17
____
ns
0
____
0
____
0
____
ns
12
____
15
____
17
____
ns
____
30
____
45
____
50
ns
____
25
____
30
____
35
BUSY TIMING (M/S=VIL)
tWB
tWH
BUSY Input to Write(4)
(5)
Write Hold After BUSY
PORT-TO-PORT DELAY TIMING
tWDD
tDDD
Write Pulse to Data Delay(1)
Write Data Valid to Read Data Delay
(1)
ns
2940 tbl 14a
7007X35
Com'l &
Military
Symbol
Parameter
7007X55
Com'l, Ind
& Military
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/S=VIH)
tBAA
BUSY Access Time from Address Match
____
20
____
45
ns
tBDA
BUSY Disable Time from Address Not Matched
____
20
____
40
ns
tBAC
BUSY Access Time from Chip Enable Low
____
20
____
40
ns
tBDC
BUSY Access Time from Chip Enable High
____
20
____
35
ns
5
____
5
____
ns
____
35
____
40
ns
25
____
25
____
ns
0
____
0
____
ns
25
____
25
____
ns
____
60
____
80
ns
____
45
____
65
tAPS
Arbitration Priority Set-up Time
tBDD
BUSY Disable to Valid Data(3)
tWH
(2)
(5)
Write Hold After BUSY
BUSY TIMING (M/S=VIL)
tWB
tWH
BUSY Input to Write(4)
(5)
Write Hold After BUSY
PORT-TO-PORT DELAY TIMING
tWDD
tDDD
Write Pulse to Data Delay(1)
Write Data Valid to Read Data Delay
(1)
ns
2940 tbl 14b
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 'X' in part numbers indicates power rating (S or L).
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
13
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY(2,5)
(M/S = VIH)(4)
tWC
MATCH
ADDR"A"
tWP
R/W"A"
tDW
tDH
VALID
DATAIN "A"
tAPS
(1)
MATCH
ADDR"B"
tBDA
tBDD
BUSY"B"
tWDD
DATAOUT "B"
VALID
tDDD
(3)
2940 drw 13
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (SLAVE).
2. CEL = CER = VIL
3. OE = VIL for the reading port.
4. If M/S = VIL (SLAVE), then BUSY is an input (BUSY"A" = VIH and BUSY"B" = "don't care", for this example).
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
Timing Waveform of Write with BUSY (M/S = VIL)
tWP
R/W"A"
tWB
BUSY"B"
tWH (1)
R/W"B"
(2)
,
2940 drw 14
NOTES:
1. tWH must be met for both BUSY input (SLAVE) and output (MASTER).
2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH.
14
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH)
ADDR"A"
and "B"
ADDRESSES MATCH
CE"A"
tAPS (2)
CE"B"
tBAC
tBDC
BUSY"B"
2940 drw 15
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing(1) (M/S = VIH)
ADDR"A"
ADDRESS "N"
tAPS
ADDR"B"
(2)
MATCHING ADDRESS "N"
tBAA
tBDA
BUSY"B"
2940 drw 16
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,2)
7007X15
Com'l Only
Symbol
Parameter
7007X20
Com'l Only
7007X25
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tINS
Interrupt Set Time
____
15
____
20
____
20
ns
tINR
Interrupt Reset Time
____
15
____
20
____
20
ns
2940 tbl 15a
7007X35
Com'l &
Military
Symbol
Parameter
7007X55
Com'l, Ind
& Military
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tINS
Interrupt Set Time
____
25
____
40
ns
tINR
Interrupt Reset Time
____
25
____
40
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. Industrial temperature: for other speeds, packages and powers contact your sales office.
15
ns
2940 tbl 15b
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing(1)
tWC
INTERRUPT SET ADDRESS
ADDR"A"
tAS (3)
(2)
tWR
(4)
CE"A"
R/W"A"
tINS (3)
INT"B"
2940 drw 17
tRC
ADDR"B"
INTERRUPT CLEAR ADDRESS
(2)
tAS (3)
CE"B"
OE"B"
tINR (3)
INT"B"
2940 drw 18
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.
2. See Interrupt Truth Table III.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
Truth Table III — Interrupt Flag(1)
Left Port
R/WL
L
X
X
X
CEL
L
X
X
L
OEL
X
X
X
L
Right Port
A14L-A 0L
7FFF
X
X
7FFE
INTL
X
X
R/WR
CER
X
X
OER
X
A14R-A 0R
X
INTR
Function
(2)
Set Right INTR Flag
(3)
Reset Right INTR Flag
L
X
L
L
7FFF
H
(3)
L
L
X
7FFE
X
Set Left INTL Flag
(2)
X
X
X
X
X
Reset Left INTL Flag
L
H
2940 tbl 16
NOTES:
1. Assumes BUSYL = BUSYR =VIH.
2. If BUSYL = VIL, then no change.
3. If BUSYR = VIL, then no change.
16
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table IV — Address BUSY
Arbitration
Inputs
Outputs
CEL
CER
AOL-A14L
AOR -A14R
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
BUSYL(1)
BUSYR(1)
Function
2940 tbl 17
NOTES:
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT7007 are
push-pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address
and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when BUSYR outputs are driving LOW regardless of actual logic level on the pin.
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)
Functions
D0 - D7 Left
D0 - D7 Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT7007.
2. There are eight semaphore flags written to via I/O5(I/O0 - I/O7) and read from all I/O0. These eight semaphores are addressed by A0 - A2.
3. CE = VIH, SEM = VIL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Functional Description
2940 tbl 18
when CER = OER = VIL, R/W is a "don't care". Likewise, the right port
interrupt flag (INTR) is asserted when the left port writes to memory location
7FFF (HEX) and to clear the interrupt flag (INTR), the right port must read
the memory location 7FFF. The message (8 bits) at 7FFE or 7FFF is userdefined since it is an addressable SRAM location. If the interrupt function
is not used, address locations 7FFE and 7FFF are not used as mail boxes,
but as part of the random access memory. Refer to Table III for the interrupt
operation.
The IDT7007 provides two ports with separate control, address and
I/O pins that permit independent access for reads or writes to any location
in memory. The IDT7007 has an automatic power down feature controlled
by CE. The CE controls on-chip power down circuitry that permits the
respective port to go into a standby mode when not selected (CE HIGH).
When a port is enabled, access to the entire memory array is permitted.
INTERRUPTS
If the user chooses the interrupt function, a memory location (mail box
or message center) is assigned to each port. The left port interrupt flag
(INTL) is asserted when the right port writes to memory location 7FFE
(HEX), where a write is defined as CE = R/W = VIL per the Truth Table.
The left port clears the interrupt through access of address location 7FFE
Busy Logic
Busy Logic provides a hardware indication that both ports of the RAM
have accessed the same location at the same time. It also allows one of
the two accesses to proceed and signals the other side that the RAM is
17
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Semaphores
“busy”. The BUSY pin can then be used to stall the access until the
operation on the other side is completed. If a write operation has been
attempted from the side that receives a BUSY indication, the write signal
is gated internally to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applications.
In some cases it may be useful to logically OR the BUSY outputs together
and use any BUSY indication as an interrupt source to flag the event of
an illegal or illogical operation. If the write inhibit function of BUSY logic is
not desirable, the BUSY logic can be disabled by placing the part in slave
mode with the M/S pin. Once in slave mode the BUSY pin operates solely
as a write inhibit input pin. Normal operation can be programmed by tying
the BUSY pins HIGH. If desired, unintended write operations
can be prevented to a port by tying the BUSY pin for that port LOW.
The BUSY outputs on the IDT 7007 RAM in master mode, are pushpull type outputs and do not require pull up resistors to operate. If these
RAMs are being expanded in depth, then the BUSY indication for the
resulting array requires the use of an external AND gate.
BUSY (L)
CE
MASTER
Dual Port
RAM
BUSY (L) BUSY (R)
CE
SLAVE
Dual Port
RAM
BUSY (L) BUSY (R)
MASTER
CE
Dual Port
RAM
BUSY (L) BUSY (R)
SLAVE
CE
Dual Port
RAM
BUSY (L) BUSY (R)
DECODER
Width Expansion with Busy Logic
Master/Slave Arrays
BUSY (R)
,
2940 drw 19
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT7007 RAMs.
When expanding an IDT7007 RAM array in width while using BUSY
logic, one master part is used to decide which side of the RAMs array will
receive a BUSY indication, and to output that indication. Any number of
slaves to be addressed in the same address range as the master, use the
BUSY signal as a write inhibit signal. Thus on the IDT7007 RAM the BUSY
pin is an output if the part is used as a master (M/S pin = H), and the BUSY
pin is an input if the part used as a slave (M/S pin = L) as shown in
Figure 3.
If two or more master parts were used when expanding in width, a split
decision could result with one master indicating BUSY on one side of the
array and another master indicating BUSY on one other side of the array.
This would inhibit the write operations from one port for part of a word and
inhibit the write operations from the other port for the other part of the word.
The BUSY arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write. In
a master/slave array, both address and chip enable must be valid long
enough for a BUSY flag to be output from the master before the actual write
pulse can be initiated with the R/W signal. Failure to observe this timing can
result in a glitched internal write inhibit signal and corrupted data in the
slave.
The IDT7007 is an extremely fast Dual-Port 32K x 8 CMOS Static RAM
with an additional 8 address locations dedicated to binary semaphore flags.
These flags allow either processor on the left or right side of the Dual-Port
RAM to claim a privilege over the other processor for functions defined by
the system designer’s software. As an example, the semaphore can be
used by one processor to inhibit the other from accessing a portion of the
Dual-Port RAM or any other shared resource.
The Dual-Port RAM features a fast access time, and both ports are
completely independent of each other. This means that the activity on the
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAM and can be read from,
or written to, at the same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous
situations and may be used by the system program to avoid any conflicts
in the non-semaphore portion of the Dual-Port RAM. These devices have
an automatic power-down feature controlled by CE, the Dual-Port RAM
enable, and SEM, the semaphore enable. The CE and SEM pins control
on-chip power down circuitry that permits the respective port to go into
standby mode when not selected. This is the condition which is shown in
Truth Table I where CE and SEM are both HIGH.
Systems which can best use the IDT7007 contain multiple processors or controllers and are typically very high-speed systems which
are software controlled or software intensive. These systems can
benefit from a performance increase offered by the IDT7007 hardware
semaphores, which provide a lockout mechanism without requiring
complex programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated in varying
configurations. The IDT7007 does not use its semaphore flags to control
any resources through hardware, thus allowing the system designer total
flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred in
either processor. This can prove to be a major advantage in very highspeed systems.
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent
of the Dual-Port RAM. These latches can be used to pass a flag, or token,
from one port to the other to indicate that a shared resource is in use. The
semaphores provide a hardware assist for a use assignment method
called “Token Passing Allocation.” In this method, the state of a semaphore
latch is used as a token indicating that shared resource is in use. If the left
processor wants to use this resource, it requests the token by setting the
latch. This processor then verifies its success in setting the latch by reading
it. If it was successful, it proceeds to assume control over the shared
resource. If it was not successful in setting the latch, it determines that the
right side processor has set the latch first, has the token and is using the
shared resource. The left processor can then either repeatedly request
that semaphore’s status or remove its request for that semaphore to perform
another task and occasionally attempt again to gain control of the token via
the set and test sequence. Once the right side has relinquished the token,
the left side should succeed in gaining control.
The semaphore flags are active LOW. A token is requested by writing
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IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
a zero into a semaphore latch and is released when the same side writes
a one to that latch.
The eight semaphore flags reside within the IDT7007 in a separate
memory space from the Dual-Port RAM. This address space is accessed
by placing a LOW input on the SEM pin (which acts as a chip select for the
semaphore flags) and using the other control pins (Address, OE, and
R/W) as they would be used in accessing a standard Static RAM. Each
of the flags has a unique address which can be accessed by either side
through address pins A0 – A2. When accessing the semaphores, none of
the other address pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a LOW level
is written into an unused semaphore location, that flag will be set to a zero
on that side and a one on the other side (see Truth Table V). That
semaphore can now only be modified by the side showing the zero. When
a one is written into the same location from the same side, the flag will be
set to a one for both sides (unless a semaphore request from the other side
is pending) and then can be written to by both sides. The fact that the side
which is able to write a zero into a semaphore subsequently locks out writes
from the other side is what makes semaphore flags useful in interprocessor
communications. (A thorough discussion on the use of this feature follows
shortly.) A zero written into the same location from the other side will be
stored in the semaphore request latch for that side until the semaphore is
freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so
that a flag that is a one reads as a one in all data bits and a flag containing
a zero reads as all zeros. The read value is latched into one side’s output
register when that side's semaphore select (SEM) and output enable (OE)
signals go active. This serves to disallow the semaphore from changing
state in the middle of a read cycle due to a write cycle from the other side.
Because of this latch, a repeated read of a semaphore in a test loop must
cause either signal (SEM or OE) to go inactive or the output will never
change.
A sequence WRITE/READ must be used by the semaphore in order
to guarantee that no system level contention will occur. A processor
requests access to shared resources by attempting to write a zero into a
semaphore location. If the semaphore is already in use, the semaphore
request latch will contain a zero, yet the semaphore flag will appear as one,
a fact which the processor will verify by the subsequent read (see Truth
Table V). As an example, assume a processor writes a zero to the left port
at a free semaphore location. On a subsequent read, the processor will
verify that it has written successfully to that location and will assume control
over the resource in question. Meanwhile, if a processor on the right side
attempts to write a zero to the same semaphore flag it will fail, as will be
verified by the fact that a one will be read from that semaphore on the right
side during subsequent read. Had a sequence of READ/WRITE been
used instead, system contention problems could have occurred during the
gap between the read and write cycles.
It is important to note that a failed semaphore request must be followed
by either repeated reads or by writing a one into the same location. The
reason for this is easily understood by looking at the simple logic diagram
of the semaphore flag in Figure 4. Two semaphore request latches feed
into a semaphore flag. Whichever latch is first to present a zero to the
semaphore flag will force its side of the semaphore flag LOW and the other
side HIGH. This condition will continue until a one is written to the same
semaphore request latch. Should the other side’s semaphore request latch
have been written to a zero in the meantime, the semaphore flag will flip
over to the other side as soon as a one is written into the first side’s request
latch. The second side’s flag will now stay low until its semaphore request
latch is written to a one. From this it is easy to understand that, if a semaphore
is requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request a
single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives
the token. If one side is earlier than the other in making the request, the
first side to make the request will receive the token. If both requests arrive
at the same time, the assignment will be arbitrarily made to one port or
L PORT
R PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
D
Q
SEMAPHORE
REQUEST FLIP FLOP
Q
D
WRITE
SEMAPHORE
READ
D0
WRITE
SEMAPHORE
READ
,
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Figure 4. IDT7007 Semaphore Logic
the other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is secure.
As with any powerful programming technique, if semaphores are misused
or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be handled
via the initialization program at power-up. Since any semaphore request
flag which contains a zero must be reset to a one, all semaphores on both
sides should have a one written into them at initialization from both sides
to assure that they will be free when needed.
Using Semaphores—Some Examples
Perhaps the simplest application of semaphores is their application as
resource markers for the IDT7007’s Dual-Port RAM. Say the 32K x 8 RAM
was to be divided into two 16K x 8 blocks which were to be dedicated at
any one time to servicing either the left or right port. Semaphore 0 could
be used to indicate the side which would control the lower section of
memory, and Semaphore 1 could be defined as the indicator for the upper
section of memory.
To take a resource, in this example the lower 16K of Dual-Port RAM,
the processor on the left port could write and then read a zero in to
Semaphore 0. If this task were successfully completed (a zero was read
back rather than a one), the left processor would assume control of the
lower 16K. Meanwhile the right processor was attempting to gain control
of the resource after the left processor, it would read back a one in response
to the zero it had attempted to write into Semaphore 0. At this point, the
software could choose to try and gain control of the second 16K section
by writing, then reading a zero into Semaphore 1. If it succeeded in gaining
control, it would lock out the left side.
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IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Once the left side was finished with its task, it would write a one to
Semaphore 0 and may then try to gain access to Semaphore 1. If
Semaphore 1 was still occupied by the right side, the left side could undo
its semaphore request and perform other tasks until it was able to write, then
read a zero into Semaphore 1. If the right processor performs a similar task
with Semaphore 0, this protocol would allow the two processors to swap
16K blocks of Dual-Port RAM with each other.
The blocks do not have to be any particular size and can even be
variable, depending upon the complexity of the software using the
semaphore flags. All eight semaphores could be used to divide the DualPort RAM or other shared resources into eight parts. Semaphores can
even be assigned different meanings on different sides rather than being
given a common meaning as was shown in the example above.
Semaphores are a useful form of arbitration in systems like disk
interfaces where the CPU must be locked out of a section of memory during
a transfer and the I/O device cannot tolerate any wait states. With the use
of semaphores, once the two devices has determined which memory area
was “off-limits” to the CPU, both the CPU and the I/O devices could access
their assigned portions of memory continuously without any wait states.
Semaphores are also useful in applications where no memory “WAIT”
state is available on one or both sides. Once a semaphore handshake has
been performed, both processors can access their assigned RAM
segments at full speed.
Another application is in the area of complex data structures. In this
case, block arbitration is very important. For this application one processor
may be responsible for building and updating a data structure. The other
processor then reads and interprets that data structure. If the interpreting
processor reads an incomplete data structure, a major error condition may
exist. Therefore, some sort of arbitration must be used between the two
different processors. The building processor arbitrates for the block, locks
it and then is able to go in and update the data structure. When the update
is completed, the data structure block is released. This allows the
interpreting processor to come back and read the complete data structure,
thereby guaranteeing a consistent data structure.
20
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX
Device
Type
A
999
A
A
Power
Speed
Package
Process/
Temperature
Range
Blank
I(1)
B
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Military (-55°C to +125°C)
Compliant to MIL-PRF-38535 QML
PF
G
J
80-pin TQFP (PN80-1)
68-pin PGA (G68-1)
68-pin PLCC (J68-1)
15
20
25
35
55
Commercial Only
Commercial Only
Commercial & Military
Commercial & Military
Commercial, Industrial & Military
S
L
Standard Power
Low Power
7007
256K (32K x 8) Dual-Port RAM
Speed in nanoseconds
2940 drw 21
NOTE:
1. Industrial temperature range is available on selected packages.
For other speeds, packages and powers contact your sales office.
Datasheet Document History
1/5/99:
6/3/99:
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Pages 2, 3, 4 Added additional notes to pin configurations
Changed drawing format
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21
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