RSQ045N03 Transistors 4V Drive Nch MOSFET RSQ045N03 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSMT6 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive). Each lead has same dimensions zApplications Switching Abbreviated symbol : QL zPackaging specifications zInner circuit Package Type (6) Taping (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RSQ045N03 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 20 ±4.5 ±18 1.0 18 1.25 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.A 1/3 RSQ045N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 1.0 − − − 3.5 − − − − − − − − − − Typ. Max. − − − − 27 36 40 − 520 150 95 12 19 41 14 6.8 1.6 2.3 10 − 1 2.5 38 51 56 − − − − − − − − 9.5 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 4.5A, VGS= 10V ID= 4.5A, VGS= 4.5V ID= 4.5A, VGS= 4V VDS= 10V, ID= 4.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 2.25A VGS= 10V RL=6.67Ω RG=10Ω VDD 15V VGS= 5V ID= 4.5A RL=3.33Ω RG=10Ω Unit V IS= 1.0A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. VSD − − 1.2 Forward voltage Conditions VDS=10V Pulsed 1 0.1 Ta=125 C 75 C 25 C −25 C 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 10 Ta=25°C Pulsed VGS=4.0V VGS=4.5V VGS=10V 100 10 1 0.1 1 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves 1000 100 VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 GATE-SOURCE VOLTAGE: VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Rev.A 10 2/3 RSQ045N03 VGS=4.5V Pulsed Ta=125°C 75°C 25°C −25°C 10 1 0.1 1 10 100 10 1 0.1 1 10 Ta=25°C Pulsed ID=4.5A 150 ID=2.25A 100 50 0 0 2 4 6 8 10 12 14 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙV) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 VGS=0V Pulsed Capacitance : C (pF) SOURCE CURRENT : Is (A) Ta=125°C 75°C 25°C −25°C 200 DRAIN CURRENT : ID (A) 10 Ta=125°C 75°C 25°C −25°C 1 VGS=4.0V Pulsed 0.1 Ta=25 C f=1MHz VGS=0V 1000 Ciss Coss 100 Crss 0.01 0.0 0.5 1.0 1.5 10 0.01 0.1 1 10 1000 SWITCHING TIME : t (ns) 100 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistors 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Typical Capacitance vs. Drain-Source Voltage Ta=25 C VDD=15V VGS=10V RG=10Ω Pulsed tf td (off) 100 td (on) 10 tr 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Switching Characteristics GATE-SOURCE VOLTAGE : VGS (V) 10 Ta=25°C 9 VDD=15V ID=7.5A 8 R =10Ω G Pulsed 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0