RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 0.3~0.6 0~0.1 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : QV zApplication Power switching, DC / DC converter. zEquivalent circuit zPackaging specifications Package Type Taping (3) TL Code Basic ordering unit (pieces) 3000 RTR040N03 ∗2 (1) ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±4.0 ±16 0.8 16 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.A 1/4 RTR040N03 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Parameter − 30 − 0.5 − − − 4.0 − − − − − − − − − − − 34 36 47 − 475 120 70 10 18 37 19 10 − 1 1.5 48 50 66 − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns ∗ − 5.9 8.3 nC ∗ − 1.0 − nC ∗ − 2.0 − nC Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 4.0A, VGS= 4.5V ID= 4.0A, VGS= 4.0V ID= 4.0A, VGS= 2.5V VDS= 10V, ID= 4.0A VDS= 10V VGS=0V f=1MHz ID= 2.0A VDD 15V VGS= 4.5V RL=7.5Ω RG=10Ω VDD 15V VGS= 4.5V ID= 4.0A RL=3.75Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD − − 1.2 V Conditions IS= 0.8A, VGS=0V Rev.A 2/4 RTR040N03 Transistors Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 VGS=4.5V pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 3.0 0.1 GATE-SOURCE VOLTAGE : VGS (V) Ta=125°C 75°C 25°C −25°C 100 0.1 1 200 140 100 80 60 40 1 0.1 1.0 ID=2.0A 20 0 0 2 4 6 8 1.5 1 10 10 12 1000 VGS=25°C pulsed VGS=2.5V 100 VGS=4.0V VGS=4.5V 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voletage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 10000 CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) Ta=125°C 75°C 25°C −25°C 0.5 ID=4.0A 120 0.1 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current GATE SOURCE VOLTAGE : VGS (V) VGS=0V pulsed 0.01 0.0 10 0.01 DRAIN CURRENT : ID (A) 160 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 10 100 10 Ta=25°C pulsed 180 DRAIN CURRENT : ID (A) 100 Ta=125°C 75°C 25°C −25°C Fig.2 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=2.5V pulsed 10 0.01 VGS=4.0V pulsed DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics 1000 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 1000 Ta=25°C f=1MHz VGS=0V Ciss 100 Coss Crss 10 0.01 0.1 1 10 100 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) VDS=10V pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) zElectrical characteristic curves Ta=25°C VDD=15V VGS=4.5V RG=10Ω pulsed 1000 tf td(off) 100 tr 10 td(on) 1 0.01 0.1 1 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics Rev.A 3/4 RTR040N03 GATE-SOURCE VOLTAGE : VGS (V) Transistors 5 Ta=25°C 4 VDD=15V ID=4.0V RG=10Ω pulsed 3 2 1 0 0 1 2 3 4 5 6 7 8 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics zMeasurement circuits Pulse Width VGS ID VDS 90% 50% 10% VGS RL VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.11 Switching Time Test Circuit 90% td(off) tr tr toff Fig.12 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.13 Gate Charge Test Circuit Fig.14 Gate Charge Waveform Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1