AOS Semiconductor Product Reliability Report AOTF8T50P, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF8T50P. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF8T50P passes AOS quality and reliability requirements. The released produc t will be categorized by the process family and be routine monit ored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: • • • • • Trench Power AlphaMOS-II technology Low RDS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material AOTF8T50P Standard sub-micron 500V N-Channel MOSFE T TO220F Bare Cu Solder Paste Al wire Epoxy resin with silica filler 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 96 hours 924 pcs 0 JESD22-A110 1000 hours 924 pcs 0 JESD22-A101 96 hours 924 pcs 0 JESD22-A102 Autoclave 130°C , 85 %RH, 33.3 psia, Vds = 80 % of Vdsmax up to 42v 85°C , 85 %RH, Vds = 80 % of Vdsmax up to 100v 121°C , 29.7psia, RH=100 % Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 HTSL Temp = 150°C 1000 hrs 924 pcs 0 JESD22-A103 HAST H3TRB Power Tj = 100°C 8572 cycles 693 pcs 0 AEC Q101 3.5min on/3.5min off Cycling Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 2.86 MTTF = 39912 years The present ation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rat e Determination is based on JEDE C Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (A f)] = 2.86 9 MTTF = 10 / FIT = 39912 years Chi²= Chi Squared Distribution, determined by the number of failures and confidenc e interval N = Tot al Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (K elvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3