Reliability Report

AOS Semiconductor
Product Reliability Report
AOTF8T50P,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF8T50P.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOTF8T50P passes
AOS quality and reliability requirements. The released produc t will be categorized by the process
family and be routine monit ored for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Reliability Stress Test Summary and Results
Reliability Evaluation
I. Product Description:
•
•
•
•
•
Trench Power AlphaMOS-II technology
Low RDS(ON)
Low Ciss and Crss
High Current Capability
RoHS and Halogen Free Compliant
Details refer to the datasheet.
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond
Mold Material
AOTF8T50P
Standard sub-micron
500V N-Channel MOSFE T
TO220F
Bare Cu
Solder Paste
Al wire
Epoxy resin with silica filler
2
III. Reliability Stress Test Summary and Results
Test Item
Test Condition
Time Point
Total
Sample
Size
Number
of
Failures
Reference
Standard
HTGB
Temp = 150°C ,
Vgs=100% of Vgsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
HTRB
Temp = 150°C ,
Vds=80% of Vdsmax
168 / 500 /
1000 hours
924 pcs
0
JESD22-A108
96 hours
924 pcs
0
JESD22-A110
1000 hours
924 pcs
0
JESD22-A101
96 hours
924 pcs
0
JESD22-A102
Autoclave
130°C , 85 %RH,
33.3 psia,
Vds = 80 % of Vdsmax
up to 42v
85°C , 85 %RH,
Vds = 80 % of Vdsmax
up to 100v
121°C , 29.7psia,
RH=100 %
Temperature
Cycle
-65°C to 150°C ,
air to air,
250 / 500
cycles
924 pcs
0
JESD22-A104
HTSL
Temp = 150°C
1000 hrs
924 pcs
0
JESD22-A103
HAST
H3TRB
Power
Tj = 100°C
8572 cycles
693 pcs
0
AEC Q101
3.5min on/3.5min off
Cycling
Note: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 2.86
MTTF = 39912 years
The present ation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rat e Determination is based on JEDE C Standard JESD 85. FIT means one
failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (A f)] = 2.86
9
MTTF = 10 / FIT = 39912 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidenc e interval
N = Tot al Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
259
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (K elvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
1
3