Datasheet

AOWF11C60
600V,11A N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
700V
IDM
80A
RDS(ON),max
< 0.44Ω
Qg,typ
30nC
Eoss @ 400V
5.1µJ
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% Rg Tested
TO-262F
Bottom View
Top View
G
D
S
D
S
D
G
G
S
AOWF11C60
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOWF11C60
TO-262F
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
ID
Max
600
Units
V
±30
V
11*
9*
A
IDM
80
Avalanche Current C,J
IAR
11
A
Repetitive avalanche energy C,J
EAR
60
mJ
750
100
20
28
0.2
-55 to 150
mJ
W
W/°C
°C
300
°C
Max
65
4.5
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
MOSFET dv/dt ruggedness
dv/dt
Peak diode recovery dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.2.0: Auguest 2014
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V/ns
Page 1 of 6
AOWF11C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.55
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
gFS
Forward Transconductance
VDS=40V, ID=5.5A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
±100
3
µA
4
5
nΑ
V
0.36
0.44
Ω
1
V
S
IS
Maximum Body-Diode Continuous Current
11
A
ISM
Maximum Body-Diode Pulsed Current C
80
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
VGS=0V, VDS=100V, f=1MHz
2000
pF
84
pF
60
pF
107
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
2.8
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.5
Ω
Co(tr)
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
30
VGS=10V, VDS=480V, ID=11A
42
nC
14
nC
4
nC
50
ns
VGS=10V, VDS=300V, ID=11A,
RG=25Ω
50
ns
70
ns
32
ns
IF=11A,dI/dt=100A/µs,VDS=100V
485
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
7.2
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: Auguest 2014
www.aosmd.com
Page 2 of 6
AOWF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
8V
-55°C
VDS=40V
10V
24
7V
10
ID(A)
ID (A)
18
6.5V
125°C
12
1
6V
6
25°C
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
1.0
8
10
Normalized On-Resistance
3
0.8
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
0.6
VGS=10V
0.4
0.2
0.0
0
5
10
15
20
2.5
VGS=10V
ID=5.5A
2
1.5
1
0.5
0
-100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1.2
40
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
125°C
1E-01
25°C
1E-02
0.9
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.2.0: Auguest 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOWF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=480V
ID=11A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
100
10
Crss
3
1
0
0
10
20
30
40
0.1
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
12
Current rating ID(A)
15
8
Eoss(uJ)
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
12
6
1
Eoss
4
9
6
3
2
0
0
0
100
200
300
400
500
600
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
VDS (Volts)
Figure 9: Coss stored Energy
100
10µs
RDS(ON)
limited
ID (Amps)
10
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOWF11C60 (Note F)
Rev.2.0: Auguest 2014
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Page 4 of 6
AOWF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOWF11C60(Note F)
Rev.2.0: Auguest 2014
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Page 5 of 6
AOWF11C60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0: Auguest 2014
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6