UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R SOT-89 MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO-92 MJE13001L-x-T92-K MJE13001G-x-T92-K TO-92 MJE13001L-x-T92-A-B MJE13001G-x-T92-A-B TO-92 MJE13001L-x-T92-A-K MJE13001G-x-T92-A-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 1 2 3 E C B B C E B C E B C E E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk MARKING SOT-89 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-92 1 of 3 QW-R201-055.I MJE13001 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current RATINGS UNIT 400 V 600 V 7 V 200 mA SOT-89 550 Collector Power Dissipation PC mW TO-92 750 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCEO VCBO VEBO IC ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL BVCBO BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector Cutoff Cut-Off Current Collector Emitter Cut-Off Current Emitter Cutoff Cut-Off Current BVEBO VBE ICBO ICEO IEBO TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 IE=100 mA VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN TYP MAX 600 400 7 1.1 100 200 100 UNIT V V V V μA μA μA ON CHARACTERISTICS hFE1* hFE2 VCE(SAT) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product 10 5 fT IC=20mA,VCE=20V,f=1MHz 8 tS tF IC=50mA, IB1=-IB2=5mA, VCC=45V VBE(SAT) Resistive Load Storage Time Fall Time VCE=20 V, IC=20mA VCE=10V, IC=0.25mA IC=50mA, IB=10mA IC=50mA, IB=10mA 70 0.5 1.2 V V MHz 1.5 0.3 μs μs CLASSIFICATION OF hFE1* RANK A RANGE 10-15 B 15-20 C 20-25 D 25-30 E 30-35 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw F 35-40 G 40-45 H 45-50 I 50-55 J 55-60 K 60-65 L 65-70 2 of 3 QW-R201-055.I MJE13001 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Capacitance,COB (pF) Saturation Voltage,VBE(SAT),VCE(SAT) DC Current Gain,hFE Collecter Current,IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-055.I