Datasheet

UNISONIC TECHNOLOGIES CO., LTD
9014
NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE

FEATURES
1
* High total power dissipation. (450mW)
* Excellent hFE linearity.
* Complementary to UTC 9015

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
9014L-x-T92-B
9014G-x-T92-B
TO-92
9014L-x-T92-K
9014G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter
B: Base
C: Collector

TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Dissipation
PC
450
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter on voltage
Output Capacitance
Current Gain-Bandwidth Porduct
Noise Figure

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
Cob
fT
NF
TEST CONDITIONS
IC=100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=10mA
VCE=5V, IC=0.2mA
f=1KHz, RS=2K
MIN
50
45
5
60
0.58
150
TYP
280
0.14
0.84
0.63
2.2
270
0.9
MAX
50
100
1000
0.3
1.0
0.7
3.5
UNIT
V
V
V
nA
nA
10
V
V
V
pF
MHz
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
60-150
B
100-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
C
200-600
D
400-1000
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TYPICAL CHARACTERISTICS
Static Characteristic
70
60
50
IB=160µA
IB=140µA
IB=120µA
IB=100µA
IB=80µA
IB=60µA
40
IB=40µA
30
20
10
0
0
DC Current Gain, hFE
90
80
DC Current Gain
1000
500
300
VCE=5V
100
50
30
IB=20µA
10
10
20
30
40
50
Collector-Emitter Voltage, VCE(V)
1
3 5 10 30 50 100 300 1000
Collector Current, IC(mA)
Current Gain-Bandwidth Product, fT(MHz)
Collector Current , IC(mA)
100
Saturation Voltage,
VBE(SAT), VCE(SAT), (mV)

NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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