UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 9015L-x-T92-B 9015G-x-T92-B TO-92 9015L-x-T92-K 9015G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-032.D 9015 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Dissipation PC 450 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current Gain-Bandwidth Product Noise Figure SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE Cob fT NF TEST CONDITIONS IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -100μA, IC = 0 IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCB = -50V, IE =0 VEB = -5V, IC =0 VCE =-5V, IC = -1mA VCB = -10V, IE =0, f =1MHz VCE = -5V, IC = -10mA VCE = -5V, IC = -0.2mA f = 1KHz, Rs = 1KΩ MIN -50 -45 -5 -0.6 60 100 TYP MAX UNIT V V V -0.2 -0.7 V -0.82 -1.0 V -0.65 -0.75 V -50 nA -100 nA 200 600 4.5 7.0 pF 190 MHz 0.7 10 dB CLASSIFICATION OF hFE RANK RANGE A 60-150 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 100-300 C 200-600 2 of 2 QW-R201-032.D 9015 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Gain VCE=-5V 100 10 -1 -10 Collector Current, -IC (mA) -10 Saturation Voltage, VBE(SAT), VCE(SAT) (V) DC Current Gain, hFE 1000 -1 IC=10IB VBE(SAT) -0.1 -0.01 1 VCE(SAT) -10 Collector Current, -IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 2 QW-R201-032.D