SAMWIN SWD10U40 DIODE TO-220F Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current ■ Designed and qualified according to JEDEC-JESD47 VR : 400V IF(AV) : 10A VF@IF=5A : 1.35V 1 2 3 1. Anode 2. Gathode 3. Anode General Description FRED Pt®series are the state of the art ultrafast recoveryrectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time.The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as wellas freewheeling diode in low voltage inverters and choppermotor drives.Their extremely optimized stored charge and low recoverycurrent minimize the switching losses and reduce overdissipation in the switching element and snubbers. Order Codes Item 1 Sales Type SWF D10U40 Marking SWD10U40 Package TO-220F Packaging TUBE Absolute maximum ratings Symbol VR IF(AV) IFSM TJ, TStg EAS Parameter Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge (@TC=150oC) current(@TC=25oC) Operating junction and storage temperatures Repetitive Avalanche Current(Per Leg) (note 1) Value Unit 400 V 10 A 80 A -55 ~ + 150 oC 560 mJ ※. Notes 1. L = 11.2mH, IAS = 10A, VDD = 25V, Starting TJ = 25oC. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 1/4 SWD10U40 SAMWIN Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol VR Parameter IR=100uA Breakdown voltage VF Forward voltage IR Reverse leakage current CT Test conditions Junction capacitance Min. Typ. Max. 400 Unit V IF=10A 1.35 1.5 V IF=10A, TJ=150oC 1.23 1.4 V VR=400V 10 uA VR=400V, TJ= 150 °C 500 uA VR=400V 5 pF DYNAMIC RECOVERY CHARACTERISTICS (TJ= 25 °C unless otherwise specified) Symbol Irrm Parameter Test conditions Min. Peak recovery current Trr Reverse recovery time Qrr Reverse recovery Charge I F=10A, di/dt=200A/us, VR =100V Typ. Max. Unit 2.8 A 43 ns 53 nC THERMAL - MECHANICAL SPECIFICATIONS Symbol Parameter Value Unit 4.8 oC/W Thermal resistance, Junction to case (Per Package) 7 oC/W Rthja Thermal resistance, Junction to ambient(Per Leg) 55 oC/W Rthja Thermal resistance, Junction to ambient(Per Package) 50 oC/W Rthjc Thermal resistance, Junction to case (Per Leg) Rthjc Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 2/4 SAMWIN Fig. 1. Typical Forward Voltage Drop Characteristics Fig. 3. Typical Junction Capacitance vs. Reverse Voltage Fig 5. Max. Thermal Impedance Z thJC Characteristics (Per Package) SWD10U40 Fig. 2. Typical Values of Reverse Current vs. Reverse Voltage Fig. 4. Max. Thermal Impedance Z thJC Characteristics (Per Leg) Fig. 6. Typical Reverse Recovery Current vs. di/dt Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 3/4 SAMWIN SWD10U40 Fig. 7. Typical Reverse Recovery Time vs. di/dt Fig. 8. Typical Stored Charge vs. di/dt Fig. 9. Reverse Recovery Parameter Test Circuit & waveform 10V VGS (DRIVER) di/dt IF (DUT) IRM Diode reverse current Diode recovery dv/dt VR (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Fig. 10. Unclamped Inductive Test Circuit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev. 1.0 4/4