STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 3 2 1 1 IPAK TO-251 DPAK TO-252 Figure 2. Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) Table 2. Order Codes Part Number Marking Package Packaging STD9N10T4 D9N10 DPAK TAPE & REEL STD9N10-1 D9N10 IPAK TUBE REV. 2 May 2004 1/12 STD9N10/STD9N10-1 Table 3. Absolute Maximum Ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 100 V Drain- gate Voltage (RGS = 20 kΩ) 100 V Gate-source Voltage ± 20 V ID Drain Current (cont.) at TC = 25 °C 9 A ID Drain Current (cont.) at TC = 100 °C 6 A Drain Current (pulsed) 36 A Total Dissipation at TC = 25 °C 45 W Derating Factor 0.3 W°/C -65 to 175 °C 175 °C Value Unit IDM (1) Ptot Tstg Tj Storage Temperature Max. Operating Junction Temperature Note: 1. Pulse width limited by safe operating area. Table 4. Thermal Data Symbol Parameter Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W 275 °C Max Value Unit Tl Maximum Lead Temperature For Soldering Purpose Table 5. Avalanche Characteristics Symbol 2/12 Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 9 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 25 V) 30 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 7 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, δ < 1%) 6 A STD9N10/STD9N10-1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA; VGS = 0 IDSS Zero Gate Voltage VDS = Max Rating 250 µA Drain Current (VGS = 0) VDS = Max Rating x 0.8; Tc = 125 °C 1000 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA IGSS Test Conditions Min. Typ. Max. 100 Unit V Table 7. On (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 4.5 A VGS = 10V; ID = 4.5 A; Tc = 100 °C Min. Typ. Max. Unit 2 3 4 V 0.23 0.27 0.54 Ω Ω Min. Typ. Max. Unit 2 4 Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Symbol Parameter Test Conditions gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 4.5 A Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 Coss Crss S 330 450 pF Output Capacitance 90 120 pF Reverse Transfer Capacitance 25 40 pF Typ. Max. Unit Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On Symbol Parameter Test Conditions Min. Turn-on Time VDD = 50 V; ID = 4.5 A; RG = 4.7 Ω 10 15 ns Rise Time VGS = 10 V (see test circuit, Figure 22) 40 60 ns Turn-on Current Slope VDD = 80 V; ID = 9 A; RG = 4.7 Ω VGS = 10 V (see test circuit, Figure 22) 440 Qg Total Gate Charge VDD = 80 V; ID = 9 A; VGS = 10 V 15 Qgs Gate-Source Charge 6 nC Qgd Gate-Drain Charge 5 nC td(on) tr (di/dt)on A/µs 25 nC Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit Off-voltage Rise Time VDD = 80 V; ID = 9 A; RG = 4.7 Ω 15 25 ns tf Fall Time VGS = 10 V (see test circuit, Figure 24) 25 35 ns tc Cross-over Time 50 70 ns tr(Voff) 3/12 STD9N10/STD9N10-1 Table 11. Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 9 A ISDM (1) Source-drain Current (pulsed) 36 A VSD (2) Forward On Voltage ISD = 9 A; VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse RecoveryCharge ISD = 9 A; di/dt = 100 A/µs VDD = 20 V; Tj = 150 °C (see test circuit, Figure 24) IRRAM Reverse RecoveryCurrent 80 ns 0.2 µC 5 A Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Derating Curve Figure 6. Output Characteristics 4/12 STD9N10/STD9N10-1 Figure 7. Transfer Characteristics Figure 8. Transconductance Figure 9. Static Drain-source On Resistance Figure 10. Gate Charge vs Gate-source Voltage Figure 11. Capacitance Variations Figure 12. Normalized Gate Threshold Voltage vs Temperature 5/12 STD9N10/STD9N10-1 Figure 13. Normalized On Resistance vs Temperature Figure 14. Turn-on Current Slope Figure 15. Turn-off Drain-source Voltage Slope Figure 16. Cross-over Time Figure 17. Switching Safe Operating Area Figure 18. Accidental Overload Area 6/12 STD9N10/STD9N10-1 Figure 19. Source-drain Diode Forward Characteristics 7/12 STD9N10/STD9N10-1 Figure 20. Unclamped Inductive Load Test Circuit Figure 21. Unclamped Inductive Waveforms Figure 22. Switching Times Test Circuits For Resistive Load Figure 23. Gate Charge Test Circuit Figure 24. Test Circuit For Inductive Load Switching And Diode Recovery Times 8/12 STD9N10/STD9N10-1 PACKAGE MECHANICAL Table 12. DPAK Mechanical Data Symbol millimeters Min Typ inches Max Min A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 C 0.45 0.60 0.018 Typ Max 0.213 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0° 8° 0° 0° Figure 25. DPAK Package Dimensions P032P_B Note: Drawing is not to scale. 9/12 STD9N10/STD9N10-1 Table 13. IPAK Mechanical Data millimeters Symbol Min inches Typ Max Min Typ A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.63 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 Figure 26. IPAK Package Dimensions A1 C2 A3 A C H B B3 2 G = 1 = = E B2 = 3 B5 L D B6 L2 L1 0068771-E Note: Drawing is not to scale. 10/12 Max 0.039 STD9N10/STD9N10-1 REVISION HISTORY Table 14. Revision History Date Revision Description of Changes March-1996 1 First Issue 3-May-2004 2 Stylesheet update. No content change. 11/12 STD9N10/STD9N10-1 Information furnished is believed to be accurate and reliable. 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