SW50CPF06

SAMWIN
SW50CPF06
DIODE
TO-3P
Features
■ Ultrafast recovery time
■ Low forward voltage drop
■ 150 °C operating junction temperature
■ Low leakage current
■ Designed and qualified according to
JEDEC-JESD47
VR
: 620V
IF(AV)
: 50A
VF at IF : 1.5V
1
2
3
1. Anode 2. Gathode 3. Anode
General Description
This FRED is designed with optimized performance of forward voltage drop and ultrafast
recovery time. the platinum doped life time control, guarantee the best overall performance
ruggedness and reliability characteristics. This devices are intended for use in the
output rectification stage of SMPS, UPS, DC/DC converters as freewheeling diode in
low voltage inverters. Their extremely optimized stored charge and low recovery current
minimize the switching losses and reduce over dissipation in the switching element.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW W 50CPF06
SW50CPF06
TO-3P
TUBE
Absolute maximum ratings
Symbol
VR
IF(AV)
TJ, TStg
Parameter
Value
Unit
Repetitive peak reverse voltage
620
V
Average rectified forward current (@TC=150oC)
50
A
-55 ~ + 150
oC
Operating junction and storage temperatures
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
VR
Parameter
Breakdown voltage,blocking voltage
Test conditions
IR=100uA
IF=3A
VF
IR
CT
Forward voltage
Min.
Typ.
Max.
620
Unit
V
0.9
1.13
V
IF=50A
1.5
V
IF=50A, TJ= 150 °C
1.3
V
VR=600V
500
nA
VR=600V, TJ= 150 °C
500
uA
Reverse leakage current
Junction capacitance
VR=600V
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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May. 2014. Rev.2.0
pF
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SW50CPF06
SAMWIN
DYNAMIC RECOVERY CHARACTERISTICS (TJ= 25 °C unless otherwise specified)
Symbol
Irrm
Parameter
Test conditions
Min.
Peak recovery current
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
I F=50A, di/dt=200A/us,
VR =100V
Typ.
Max.
Unit
5.9
A
59
ns
190
nC
THERMAL - MECHANICAL SPECIFICATIONS
Symbol
Value
Unit
Rthjc
Thermal resistance, Junction to case (Per Leg)
Parameter
0.57
oC/W
Rthjc
Thermal resistance, Junction to case (Per Package)
0.62
oC/W
Rthja
Thermal resistance, Junction to ambient(Per Leg)
35.5
oC/W
Rthja
Thermal resistance, Junction to ambient(Per Package)
34.3
oC/W
Fig. 1. Typical Forward Voltage
Drop Characteristics
Fig. 3. Typical Junction Capacitance vs.
Reverse Voltage
Fig. 2. Typical Values of Reverse
Current vs. Reverse Voltage
Fig. 4. Max. Thermal Impedance Z
thJC Characteristics (Per Leg)
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May. 2014. Rev.2.0
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SAMWIN
SW50CPF06
Fig 5. Max. Thermal Impedance Z
thJC Characteristics (Per Package)
Fig. 7. Typical Reverse Recovery Time
vs. di/dt
Fig. 6. Typical Reverse Recovery Current
vs. di/dt
Fig. 8. Typical Stored Charge vs. di/dt
Fig. 9. Reverse Recovery Parameter Test Circuit & waveform
10V
VGS (DRIVER)
di/dt
IF (DUT)
IRM
Diode reverse current
Diode recovery dv/dt
VR (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
3/4
SAMWIN
SW50CPF06
Fig. 10. Unclamped Inductive Test Circuit
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
4/4