UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT30N08
Power MOSFET
80V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT30N08 is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC UTT30N08 is generally applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON)＜40mΩ @ VGS=10V, ID=30A
* Low Gate Charge (Typical 48nC)
* Low CRSS (Typical 30pF)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT30N08L-TN3-R
UTT30N08G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-732.b
UTT30N08
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 4)
PARAMETER
Drain to Source Voltage
Gate-Source Voltage
RATINGS
UNIT
80
V
±20
V
TC=25°C
30
A
Continuous
ID
Drain Current (Note 5)
TC=100°C
21.3
A
Pulsed (Note 2)
IDM
120
A
300
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8
mJ
Power Dissipation (TC=25°C)
PD
28
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=4mH, IAS=30A. VDD=50V, RG=25Ω, Starting TJ=25°C
4. Drain current limited by maximum junction temperature
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
4.53
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V, TJ=150°C
VDS=80V, VGS=0V,
VGS=+20V, VDS=0V
VGS=-20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=60V, VGS=10V, ID=30A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=15A, RG=4.7Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=30A, VGS=0V
Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
80
V
1
µA
+100 nA
-100 nA
2.0
32
4.0
40
2400
390
30
48
15
20
45
60
115
66
V
mΩ
pF
pF
pF
60
nC
nC
nC
ns
ns
ns
ns
30
120
1.4
A
A
V
2 of 5
QW-R502-732.b
UTT30N08
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-732.b
UTT30N08
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
4 of 5
QW-R502-732.b
UTT30N08
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-732.b