UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50Z is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. 1 TO-92 FEATURES * RDS(ON)=4.6Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N50ZL-T92-B 1N50ZG-T92-B 1N50ZL-T92-K 1N50ZG-T92-K 1N50ZL-T92-R 1N50ZG-T92-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 1 G G G Pin Assignment 2 3 D S D S D S Packing Tape Box Bulk Tape Reel 1 of 6 QW-R502-726.b 1N50Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±20 V ID 1.3 (Note 2) A Continuous (TC=25°C) Drain Current Pulsed (Note 3) IDM 5 (Note 2) A Avalanche Current (Note 3) IAR 1.3 A 113 mJ Single Pulsed (Note 4) EAS Avalanche Energy Repetitive (Note 5) EAR 2.6 mJ Power Dissipation 40 W PD Derate above 25°C 0.32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 120mH, IAS = 1.3A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 3.13 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=500V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 500 VDS=VGS, ID=250µA VGS=10V, ID=0.65A 2.0 VGS=0V, VDS=25V, f=1.0MHz 1 +5 -5 V µA µA µA 4.6 4.0 6.0 V Ω 220 30 11 290 35 13 pF pF pF 2 of 6 QW-R502-726.b 1N50Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=1.5A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=1.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=1.3A, VGS=0V Body Diode Reverse Recovery Time trr IS=1.5A, VGS=0V, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 11 1.6 5.5 12 13 42 15 16 35 35 90 40 1.3 5 1.15 162 0.54 nC nC nC ns ns ns ns A A V ns µC 3 of 6 QW-R502-726.b 1N50Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-726.b 1N50Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-726.b 1N50Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-726.b