NTE7206 Integrated Circuit Triple Video Output Amplifier Description: The NTE7206 includes three video output amplifiers in one plastic 9-Lead SIP medium power package, using high-voltage DMOS technology, and is intended to drive the three cathodes of a color CRT directly. To obtain maximum performance, the amplifier should be used with black-current control. Features: D Typical Bandwidth of 5.5MHz for an Output Signal of 60V (p-p) D High Slew Rate of 900V/μs D No External Components Required D Very Simple Application D Single Supply Voltage of 200V D Internal Reference Voltage of 2.5V D Fixed Gain of 50 D Black-Current Stabilization (BCS) Circuit D Thermal Protection. Absolute Maximum Ratings: (Voltages measured with respect to Pin4 (GND) unless otherwise specified) Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Input Voltage at Pin1 to Pin3, Vi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Measurement Output Voltage, Vo(m) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Cathode Output Voltage, Vo(c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDD Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Electrostatic Handling, Ves Human Body Model (HBM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Machine Model (MM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Thermal Resistance, Junction-to-Ambient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56K/W Thermal Resistance, Junction-to-Fin (Note 1), Rth(J-FIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11K/W Thermal Resistance, Heatsink-to-Ambient, Rth(H-A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18K/W Note 1. An external heatsink is necessary. Recommended Operating Conditions: Parameter Supply Voltage Operating Range Symbol Test Conditions Min Typ Max Unit VDD 180 - 210 V Tj -20 - +150 °C Electrical Characteristics: (TA = +25°C, VDD = 200V, Vo(c1) = Vo(c2) = Vo(c3) = 1/2VDD, CL = 10 pF (CL consists of parasitic and cathode capacitance), Rth(H-A) = 18K/W unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit 5.9 6.9 7.9 mA Quiescent Supply Current Iq Internal Reference Voltage (input stage) Vref(int) 2.5 V Input Resistance Ri 3.6 kΩ Gain of Amplifier G 47.5 Gain Difference ΔG -2.5 0 +2.5 116 129 142 V 0 5 V Nominal Ouput Voltage at Pin7, Pin8 and Pin9 (DC Value) 51.0 55.0 VO(c) Ii = 0μA Differential Nominal Output Offset Voltage between Pin7 and Pin8, Pin8 and Pin9 and Pin9 and Pin7 (DC Value) ΔVO(c)(offset) Ii = 0μA Output Voltage Temperature Drift at Pin7, Pin8 and Pin9 ΔVO(c)(T) -10 mV/K Differential Output Offset Temperature Drift between Pin7 and Pin8, Pin8 and Pin9 and Pin7 and Pin9 ΔVO(c)(T)(offset) 0 mV/K Offset Current of Measurement Output Linearity of Current Transfer Io(m)(offset) ΔIo(m)/ΔIo(c) Io(c) = 0μA, 1.5V < Vi < 5.5V, 3V < Vo(m) < 6V -50 -100μA < Io(c) < 100μA, 1.5V < Vi < 5.5V, 3V < Vo(m) < 6V 0.9 +50 1.0 at CRT discharge, Io(c) = 1mA, 1.5V < Vi < 5.5V, 3V < Vo(m) < 5.4V 1.0 20 μA 1.1 Maximum Peak Output Current (Pin7, Pin8 and Pin9) Io(c)(max) 50V < Vo(c) < VDD - 50V mA Minimum Output Voltage (Pin7, Pin8 and Pin9) Vo(c)(min) V = 7V Maximum Output Voltage (Pin7, Pin8 and Pin9) Vo(c)(max) V = 1V Small Signal Bandwidth (Pin7, Pin8 and Pin9) BS Vo(c) = 60V(p-p) 5.5 MHz Large Signal Bandwidth (Pin7, Pin8 and Pin9) BL Vo(c) = 100V(p-p) 4.5 MHz Cathode Output Propagation Time 50% input to 50% output (Pin7, Pin8 and Pin9) tPco Vo(c) = 100V(p-p) square wave, f < 1MHz, tr = tf = 40ns (Pin1, Pin2 and Pin3) 60 ns Difference in Cathode Output Propagation Time 50% input to 50% output (Pin7 and Pin8, Pin7 and Pin9 and Pin8 and Pin9) ΔtPco Vo(c) = 100V(p-p) square wave, f < 1MHz, tr = tf = 40ns (Pin1, Pin2 and Pin3) -10 0 +10 ns Cathode Output Rise Time 10% Output to 90% Output (Pin7, Pin8 and Pin9) to(r) Vo(c) = 50 to 150V square wave, f < 1MHz; tf = 40ns (Pin1, Pin2 and Pin3) 67 91 113 ns Cathode Output Fall Time 90% output to 10% Output (Pin7, Pin8 and Pin9) to(f) Vo(c) = 150 to 50V square wave, f < 1MHz, tr = 40ns (Pin1, Pin2 and Pin3) 67 91 113 ns 10 VDD-15 V V Electrical Characteristics (Cont'd): (TA = +25°C, VDD = 200V, Vo(c1) = Vo(c2) = Vo(c3) = 1/2VDD, CL = 10 pF (CL consists of parasitic and cathode capacitance), Rth(H-A) = 18K/W unless otherwise specified. Parameter Setting Time 50% Input to 99% < output < 101% (Pin7, Pin8 and Pin9) Slew Rate Between 50V to (VDD - 50V) (Pin7, Pin8 and Pin9) Cathode Ouput Voltage Overshoot (Pin7, Pin8 and Pin9) Power Supply Rejection Ratio DC Crosstalk Between Channels Symbol Test Conditions tst Vo(c) = 100V(p-p) square wave, f < 1MHz; tr = tf = 40ns (Pin1, Pin2 and Pin3) Vi = 4V (p-p) square wave, f < 1MHz; tr = tf = 40ns (Pin1, Pin2 and Pin3) Vo(c) = 100V (p-p) square wave, f < 1MHz; tr = tf = 40ns (Pin1, Pin2 and Pin3) f < 50kHz, Note 2 SR Ov PSRR αct(DC) Min Typ Max Unit 350 ns 900 V/μs 2 % 55 50 dB dB Note 2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage. Pin Connection Diagram (Front View) 9 8 7 6 5 4 3 2 1 Cathode Output 1 Cathode Output 2 Cathode Output 3 VDD Black Current Measurement Output GND (fin) Inverting Input 3 Inverting Input 2 Inverting Input 1 .827 (21.0) .130 (3.3) Dia .065 (1.68) .242 (6.1) Seating Plane .590 (15.0) .228 (5.8) .169 (4.3) 1 9 .134 (3.42) .728 (18.5) .118 (3.0) Min .100 (2.54) .100 (2.54) .140 (3.56) .886 (22.0) .250 (6.35)