INTEGRATED CIRCUITS DATA SHEET TDA6108JF Triple video output amplifier Product specification Supersedes data of 1998 Jun 22 File under Integrated Circuits, IC02 1999 Oct 29 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF FEATURES • Black-Current Stabilization (BCS) circuit • Typical bandwidth of 9.0 MHz for an output signal of 60 V (p-p) • Thermal protection. • High slew rate of 1850 V/µs GENERAL DESCRIPTION • No external components required The TDA6108JF includes three video output amplifiers in one plastic DIL-bent-SIL 9-pin medium power (DBS9MPF) package (SOT111-1), using high-voltage DMOS technology, and is intended to drive the three cathodes of a colour CRT directly. To obtain maximum performance, the amplifier should be used with black-current control. • Very simple application • Single supply voltage of 200 V • Internal reference voltage of 2.5 V • Fixed gain of 51 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA6108JF DBS9MPF DESCRIPTION VERSION plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1 BLOCK DIAGRAM VDD handbook, full pagewidth 6 MIRROR 5 MIRROR 1 TDA6108JF CASCODE 1 3× MIRROR 4 CURRENT SOURCE 9, 8, 7 1× Voc(3), Voc(2), Voc(1) 1× THERMAL PROTECTION CIRCUIT Vi(1), Vi(2), Vi(3) 1, 2, 3 Rf VIP REFERENCE DIFFERENTIAL STAGE 5 MIRROR 3 Ri Ra 3× CASCODE 2 MIRROR 2 4 MGL318 Fig.1 Block diagram (one amplifier shown). 1999 Oct 29 2 Io(m) Philips Semiconductors Product specification Triple video output amplifier TDA6108JF PINNING SYMBOL PIN DESCRIPTION Vi(1) 1 inverting input 1 Vi(2) 2 inverting input 2 Vi(3) 3 handbook, halfpage Vi(1) 1 inverting input 3 Vi(2) 2 3 4 GND 4 ground (fin) Vi(3) Iom 5 black current measurement output GND VDD 6 supply voltage Voc(3) 7 cathode output 3 Voc(2) 8 cathode output 2 Voc(1) 9 cathode output 1 Iom 5 TDA6108JF VDD 6 Voc(3) 7 Voc(2) 8 Voc(1) 9 MGL319 Fig.2 Pin configuration. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground); currents as specified in Fig.1; unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage 0 250 V Vi input voltage 0 12 V Vom measurement output voltage 0 6 V Voc cathode output voltage 0 VDD V Tstg storage temperature −55 +150 °C Tj junction temperature −20 +150 °C Ves electrostatic handling human body model (HBM) − 2000 V machine model (MM) − 300 V HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices” ). QUALITY SPECIFICATION Quality specification “SNW-FQ-611 part D” is applicable. 1999 Oct 29 3 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient Rth(j-fin) thermal resistance from junction to fin Rth(h-a) thermal resistance from heatsink to ambient VALUE note 1 UNIT 56 K/W 11 K/W 10 K/W Note 1. An external heatsink is necessary. Thermal protection The internal thermal protection circuit gives a decrease of the slew rate at high temperatures: 10% decrease at 130 °C and 30% decrease at 145 °C (typical values on the spot of the thermal protection circuit). MGL322 8 handbook, halfpage Ptot (W) (1) 6 4 (2) handbook, halfpage 2 outputs 5 K/W thermal protection circuit 0 −20 20 60 100 6 K/W 180 140 Tamb (°C) fin MGK279 (1) Infinite heatsink. (2) No heatsink. Fig.4 Equivalent thermal resistance network. Fig.3 Power derating curves. 1999 Oct 29 4 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF CHARACTERISTICS Operating range: Tj = −20 to +150 °C; VDD = 180 to 210 V. Test conditions: Tamb = 25 °C; VDD = 200 V; Vo(c1) = Vo(c2) = Vo(c3) = 1⁄2VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W (measured in test circuit of Fig.8); unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Iq quiescent supply current 8.8 10.3 11.7 mA Vref(int) internal reference voltage (input stage) − 2.5 − V Ri input resistance − 3.2 − kΩ G gain of amplifier 47.5 51.0 55.0 ∆G gain difference −2.5 0 +2.5 VO(c) nominal output voltage at pins 7, 8 and 9 (DC value) Ii = 0 µA 116 129 142 V ∆VO(c)(offset) differential nominal output offset voltage between pins 7 and 8, 8 and 9 and 9 and 7 (DC value) Ii = 0 µA − 0 5 V ∆Vo(c)(T) output voltage temperature drift at pins 7, 8 and 9 − −10 − mV/K − 0 − mV/K −50 − +50 µA 0.9 1.0 1.1 ∆Vo(c)(T)(offset) differential output offset voltage temperature drift between pins 7 and 8, 8 and 9 and 7 and 9 Io(m)(offset) offset current of measurement Io(c) = 0 µA; output (for 3 channels) 1.5 V < Vi < 5.5 V; 3 V < Vo(m) < 6 V ∆Io(m)/∆Io(c) linearity of current transfer Io(c)(max) maximum peak output current 50 V < Vo(c) < VDD − 50 V (pins 7, 8 and 9) − 28 − mA Vo(c)(min) minimum output voltage (pins 7, 8 and 9) Vi = 7.0 V; note 1 − − 10 V Vo(c)(max) maximum output voltage (pins 7, 8 and 9) Vi = 1.0 V; note 1 VDD − 15 − − V BS small signal bandwidth (pins 7, 8 and 9) Vo(c) = 60 V (p-p) − 9.0 − MHz BL large signal bandwidth (pins 7, 8 and 9) Vo(c) = 100 V (p-p) − 8.0 − MHz tPco cathode output propagation time 50% input to 50% output (pins 7, 8 and 9) Vo(c) = 100 V (p-p) square wave; f <1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7 − 32 − ns 1999 Oct 29 −100 µA < Io(c) < 100 µA; 1.5 V < Vi < 5.5 V; 3 V < Vo(m) < 6 V 5 Philips Semiconductors Product specification Triple video output amplifier SYMBOL PARAMETER TDA6108JF CONDITIONS MIN. TYP. MAX. UNIT ∆tPco difference in cathode output propagation time 50% input to 50% output (pins 7 and 8, 7 and 9 and 8 and 9) Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3) −10 0 +10 ns to(r) cathode output rise time 10% output to 90% output (pins 7, 8 and 9) Vo(c) = 50 to 150 V square wave; f < 1 MHz; tf = 40 ns (pins 1, 2 and 3); see Fig.6 35 50 65 ns to(f) cathode output fall time 90% output to 10% output (pins 7, 8 and 9) Vo(c) = 150 to 50 V square wave; f < 1 MHz; tr = 40 ns (pins 1, 2 and 3); see Fig.7 35 50 65 ns tst settling time 50% input to 99% < output < 101% (pins 7, 8 and 9) Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7 − − 350 ns SR slew rate between 50 V to (VDD − 50 V) (pins 7, 8 and 9) Vi = 4 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3) − 1850 − V/µs Ov cathode output voltage overshoot (pins 7, 8 and 9) Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7 − 10 − % PSRR power supply rejection ratio f < 50 kHz; note 2 − 65 − dB αct(DC) DC crosstalk between channels − 50 − dB Notes 1. See also Fig.5 for the typical DC-to-DC transfer of Vi to Vo(c). 2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage. 1999 Oct 29 6 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF MGL371 200 handbook, halfpage Vo(c) (V) 160 129 120 80 40 0 0 2 2.5 4 Vi (V) 6 Fig.5 Typical DC-to-DC transfer of Vi to Vo(c). 1999 Oct 29 7 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF 4.18 Vi (V) 3.09 t 2.00 tst Ov (in %) 151 150 140 149 Vo(c) (V) 100 60 50 t to(r) MGL369 tPco Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal. 1999 Oct 29 8 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF 4.18 Vi (V) 3.09 t 2.00 tst 150 140 Vo(c) (V) 100 Ov (in %) 51 60 50 49 t to(f) MGL370 tPco Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal. 1999 Oct 29 9 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF External flashover protection Dissipation For sufficient flashover protection it is necessary to apply an external diode and 100 Ω resistor for each channel. See application note “Application and Product description of TDA6107Q/N1” (report number AN96072). Regarding dissipation, distinction must first be made between static dissipation (independent of frequency) and dynamic dissipation (proportional to frequency). The static dissipation of the TDA6108JF is due to voltage supply currents and load currents in the feedback network and CRT. To limit the diode current an external 1 kΩ carbon high-voltage resistor in series with the external diode and a 2 kV spark gap are needed (for this resistor value, the CRT has to be connected to the main PCB). The static dissipation Pstat equals: P stat = V DD × I DD + 3 × V O(c) × I O(c) VDD must be decoupled to GND: Where: 1. With a capacitor >20 nF with good HF behaviour (e.g. foil); this capacitor must be placed as close as possible to pins 6 and 4, but definitely within 5 mm. VDD = supply voltage IDD = supply current 2. With a capacitor >3.3 µF on the picture tube base print. VO(c) = DC value of cathode voltage IO(c) = DC value of cathode current. Switch-off behaviour The dynamic dissipation Pdyn equals: The switch-off behaviour of the TDA6108JF is controllable. This is due to the fact that the output pins of the TDA6108JF are still under control of the input pins for low power supply voltages (approximately 30 V and higher). P dyn = 3 × V DD × ( C L + C int ) × f i × V o(c)(p-p) × δ Where: CL = load capacitance Cint = internal load capacitance (≈4 pF) Bandwidth fi = input frequency The addition of the flash resistor produces a decreased bandwidth and increases rise and fall times. For further information, see Application note of the TDA6108JF. Vo(c)(p-p) = output voltage (peak-to-peak value) δ = non-blanking duty cycle. The IC must be mounted on the picture tube base print to minimize the load capacitance CL. 1999 Oct 29 10 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF TEST AND APPLICATION INFORMATION VDD handbook, full pagewidth C1 Vi(1) J1 22 µF 6 Rf 1 Ri Vof C2 1 Ra C7 20 nF Voc(1) 9 Iom 22 nF C8 10 µF C10 6.8 pF R1 2 MΩ C11 136 pF R2 100 kΩ C13 6.8 pF R3 2 MΩ C14 136 pF R4 100 kΩ C16 6.8 pF R5 2 MΩ C17 136 pF R6 100 kΩ C9 3.2 pF C3 Vi(2) J2 22 µF Rf 2 Ri Vof C4 2 Ra Voc(2) 8 Iom 22 nF probe 1 C12 3.2 pF C5 Vi(3) 22 µF J3 Rf 3 Ri Vof C6 3 Ra Voc(3) 7 Iom 22 nF probe 2 C15 3.2 pF VIP REFERENCE probe 3 5 TDA6108JF Vo(m) 4 4V MGL321 Current sources J1, J2 and J3 are to be tuned so that Vo(c) of pins 9, 8 and 7 is set to 100 V. Fig.8 Test circuit. 1999 Oct 29 11 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF INTERNAL CIRCUITRY handbook, full pagewidth to cascode stage GND VDD 4 6 to black current measurement circuit TDA6108JF 1, 2, 3 (1) esd from input circuit esd flash 7, 8, 9 esd to black current measurement circuit from control circuit from input circuit Vbias esd 5 esd 6.8 V esd from control circuit to black current measurement circuit to black current measurement circuit MGL320 (1) All pins have an energy protection for positive or negative overstress situations. Fig.0 Internal pin configuration. 1999 Oct 29 12 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF PACKAGE OUTLINE DBS9MPF: plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1 D D1 A2 q P P1 Q A3 q2 q1 A seating plane A4 E pin 1 index c L 1 9 e2 b e Z b2 0 θ w M b1 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 18.5 17.8 A2 A3 max. 3.7 8.7 8.0 A4 b b1 b2 c D (1) D1 E (1) e e2 15.5 1.40 0.67 1.40 0.48 21.8 21.4 6.48 2.54 2.54 15.1 1.14 0.50 1.14 0.38 21.4 20.7 6.20 L P P1 3.9 3.4 2.75 2.50 3.4 3.2 Q q 1.75 15.1 1.55 14.9 q1 q2 w Z (1) max. θ 4.4 4.2 5.9 5.7 0.25 1.0 65o 55o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-03-11 SOT111-1 1999 Oct 29 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Oct 29 14 Philips Semiconductors Product specification Triple video output amplifier TDA6108JF NOTES 1999 Oct 29 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545004/200/03/pp16 Date of release: 1999 Oct 29 Document order number: 9397 750 06486